BD172 Search Results

Contextual Info: Model BD1722N5050AHF Rev A Ultra Low Profile 0404 Balun 50Ω to 50Ω Balanced Description The BD1722N5050AHF is a low profile, low impedance sub-miniature unbalanced to balanced transformer targeted at the GSM, CDMA, WCDMA and UMTS designed for differential inputs and output locations on modern chipsets in an

Contextual Info: Model BD1722N5050AHF Rev A Ultra Low Profile 0404 Balun 50Ω to 50Ω Balanced Description The BD1722N5050AHF is a low profile, low impedance sub-miniature unbalanced to balanced transformer targeted at the GSM, CDMA, WCDMA and UMTS designed for differential inputs and output locations on modern chipsets in an

Contextual Info: Model BD1722J50150A00 Rev A Ultra Low Profile 0805 Balun 50Ω to 150Ω Balanced Description The BD1722J50150A00 is a low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets in an easy to use surface mount package covering the

Contextual Info: Model BD1722N5050A00 Rev A Ultra Low Profile 0404 Balun 50Ω to 50Ω Balanced Description The BD1722N5050A00 is a low profile, low impedance sub-miniature unbalanced to balanced transformer targeted at the GSM, CDMA, WCDMA and UMTS designed for differential inputs and output locations on modern chipsets in an

Contextual Info: BD172R Transistors Darlington Full Bridge Power Module Circuits Per Package1 Isolated Case Y/N Yes V(BR)CEO (V)500 V(BR)CBO (V)450 I(C) Max. (A)75 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.70 @I(C) (A) (Test Condition)75

Contextual Info: BD172RS Transistors Darlington Full Bridge Power Module Circuits Per Package1 Isolated Case Y/N Yes V(BR)CEO (V)500 V(BR)CBO (V)450 I(C) Max. (A)75 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.70 @I(C) (A) (Test Condition)75

BD1722J50200AHF

Contextual Info: Model BD1722J50200AHF Rev A Ultra Low Profile 0805 Balun 50Ω to 200Ω Balanced Description The BD1722J50200AHF is a low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets in an easy to use surface mount package covering the

Contextual Info: BD172S Transistors Darlington Full Bridge Power Module Circuits Per Package1 Isolated Case Y/N Yes V(BR)CEO (V)500 V(BR)CBO (V)450 I(C) Max. (A)75 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.70 @I(C) (A) (Test Condition)75

BD1722J50150A00

Contextual Info: Model BD1722J50150A00 Rev B Ultra Low Profile 0805 Balun 50Ω to 150Ω Balanced Description The BD1722J50150A00 is a low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets in an easy to use surface mount package covering the

BD1722J50200A00

Contextual Info: Model BD1722J50200A00 Rev B Ultra Low Profile 0805 Balun 50Ω to 200Ω Balanced Description The BD1722J50200A00 is a low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets in an easy to use surface mount package covering the DCS, PCS,

Contextual Info: Model BD1722J50100AHF Rev A Ultra Low Profile 0805 Balun 50Ω to 100Ω Balanced Description The BD1722J50100AHF is a low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets in an easy to use surface mount package covering the

Contextual Info: Model BD1722J50200A00 Rev A Ultra Low Profile 0805 Balun 50Ÿ WR Ÿ %DODQFHG Description The BD1722J50200A00 is a low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets in an easy to use surface mount package covering the DCS, PCS,

Contextual Info: Model BD1722L50200A00 Rev A Ultra Low Profile 0805 Balun 50Ω to 200Ω Balanced Description The BD1722J50200A00 is a low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets in an easy to use surface mount package covering the DCS, PCS,

BD1722J50100A

Abstract: BD1722J50100A00
Contextual Info: Model BD1722J50100A00 Rev C Ultra Low Profile 0805 Balun 50Ω to 100Ω Balanced Description The BD1722J50100A00 is a low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets in an easy to use surface mount package covering the DCS, PCS,

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

Contextual Info: HMC631LP3 / 631LP3E v00.1007 GaAs HBT VECTOR MODULATOR 1.8 - 2.7 GHz Typical Applications Features The HMC631LP3 E is ideal for: Continuous Phase Control: 360° • Cellular/3G & WiMAX Systems Continuous Gain Control: 40 dB • Wireless Infrastructure HPA &

2.4ghz lnb

Abstract: 1M710S 1G1304-30 XC0900A-03S xc1900a-03s BD2425J50100A00 3A425 B0011E75300A00 diplexer gsm umts 900 stripline power combiner splitter
Contextual Info: Selection Matrix 3 dB Hybrid Couplers Model Number Package Size [Inch] Freq. Band [MHz] Ins. loss [dB max] Isolation [dB min] VSWR [max:1] ± Amp. Bal. [dB max] 90 ± Ph. Bal [deg. max] Avg. Power [W max] XC0450A-03 XC0450L-03

2N5483

Abstract: BD173 diode 2U 66 BD171 MJE30 MJE2360T
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE »T ON) Min (Hz) Max k)N Max (A) (8) •cBO r (CE)Mt Max (Ohmt) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . .

DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

JE350

Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
Contextual Info: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

ADRF6655-EVALZ

Abstract: TC1-1-43A balun tc1-1-13m ADRF6655 dv5 1250 IP1dB 0402C ADRF6655ACPZ-R7 Agilent E5052 settling time E4440
Contextual Info: Broadband Up/Downconverting Mixer with Integrated Fractional-N PLL and VCO ADRF6655 The programmable divider is controlled by an Σ-Δ modulator SDM . The modulus of the SDM can be programmed between 1 and 2047. FEATURES Broadband active mixer with integrated fractional-N PLL

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK