BC417
Abstract: 2SA544 2N5124 LOW-POWER SILICON PNP 2N5120 BF541
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 - 25 30 BC350B BC350L 2SA544 2SA544 2SA544 2SA552 KT2091 KT5011 BC807 BC636 92GE77A BF541 2N3857 BC204 TMPA813 2N5119 2N5122 2N5122 2N5122 2N5125 ~~~g~ BC281 A MMBA813S2 MMBA813S2 2SA813S2 ZTX503 ZT183
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bc350bbc350l2sa5442sa552+9kt2091kt5011bc807bc636bc4172n5124low-power silicon pnp2n5120bf541
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TO-39 1000 V
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military
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bc108zt180zt1872n706a+42n706bcy57bsy95ato-39 1000 v
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bc140
Abstract: 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN GENERAL PURPOSE TA B LE1 NPN SILICON PLANAR G EN ER A L P U R P O S E T R A N S IST O R S The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,
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bcy792n9292n9302n2219a+162n2905a2n2222a2n2907azt181zt182bcy58bc1402n1711 complement2n18932n21022n24052n4036bfx84bfx85zt86zt88
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bc140
Abstract: 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military
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bc160bfy502n16132n1711+15zt211bcy65ebcy772n2270zt210bc1402n24052n18932n21022n4036bfx84bfx85zt86zt88zt91
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BC108 transistor
Abstract: bc140 2N2102 2N2605 2N4036 BC141 BC161 BCY65E BCY77 ZT189
Contextual Info: PNP LOW LEVEL TABLE 2 - PN P SILICON PLA N A R LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from D C to radio frequencies in Commercial, Industrial and Military
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zt211zt184bcy79bcy59+15bcy71zt181zt182bc160bc140bcy78bc108 transistor2n21022n26052n4036bc141bc161bcy65ebcy77zt189
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2N2102
Abstract: 2N3262 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86 ZT88
Contextual Info: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR M E D IU M AN D HIGH SPEED SW ITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector Current
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2n3262bcy792n2218a2n2904a+152n2219a2n2905a2n2221a2n2906a2n2222a2n2907a2n21022n4036bcy65ebcy77bfx84bfx85zt189zt86zt88
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BC338C
Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military
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mpsa55ztx750ztx550bc327a+15bc327bbc327cbc328abc328bbc328cbc338c2n18932n21022n24052n4036bfx84bfx85zt86zt88zt91
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BC337b
Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector
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2n3262t0-39t0-18ztx552+15mpsa56ztx751ztx551mpsa55ztx750ztx550bc337bbc327b2n21022n4036bcy65ebfx84bfx85zt86zt88
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2n2218a
Abstract: 2N2102 2N3262 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86
Contextual Info: NPN SWITCHING TA B LE 3 NPN SILICO N PLAN AR M EDIUM AN D HIGH SP E E D SW ITCH IN G T R A N S IS T O R S The devices shown in this table are characterised for general medium voltage, medium and high speed switching applications in Commercial, Industrial and Military equipments.
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2n3262bcy79bfx862n2218a+142n2904a2n2219a2n2905a2n2221a2n2906a2n2222a2n21022n4036bcy65ebcy77bfx84bfx85zt189zt86
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typical 2n2222 npn transistors
Abstract: 2N2475 2N2221 2N2222 2N2483 FF2221E FF2221J FF2222E FF2222J FF2483E
Contextual Info: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium
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ff3725jff2221eff2221j2n2221+9ff2222eff2222j2n2222ff2483eff2483jmoulto-18typical 2n2222 npn transistors2n24752n2483
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N2907
Abstract: ZT152 N2904 2N2102 2N4036 BC141 BC161 BCY65E BCY77 ZT189
Contextual Info: PNP GENERAL PURPOSE TA B LE2 PNP SILICO N PLA N A R G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designedfor small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,
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bcy702n26052n2604zt181+16zt182bcy78bcy58bcy72zt180zt187n2907zt152n29042n21022n4036bc141bc161bcy65ebcy77zt189
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BSY55
Abstract: Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military
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2n2219a2n2905a2n2222a2n2907a+15zt181bcy58t0-18bcy78bsy51bsy55scans-00107837bcy562n18932n21022n24052n4036bfx85zt86zt88
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BCY56
Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5
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2n30532n40372n6962n1131+82n6972n1132bfy51bsy51bsy52bc107bcy56bc177
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bc140
Abstract: 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military
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bcy792n2218a2n2904a2n2219a+162n2905a2n2221a2n2906a2n2222a2n2907abfy50bc1402n18932n21022n24052n4036bfx85bsy55zt86zt88zt91
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2N2222
Abstract: 2N2904 2N2218 2N2219 transistor 2N2475 2N2219 2N2220 2N2221 2N2905 2N2906
Contextual Info: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at hFE Switching Times (Max) at fjM in at at Package V !c mA lc Ib Min. Max. !c mA MHz mA mA — TO-39 150 250 20 25* 175* 150 TO-39 2N2904 150 250 20 25* 200* 150 TO-39 2N2905 60 150 250 20 20* 213*
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bfy512n22182n29042n2219+82n29052n22202n22212n29062n22222n29072n2219 transistor2n2475
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2N2102
Abstract: 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 ZT89
Contextual Info: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector
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2n3262t0-39t0-18bcy79+142n2218a2n2904a2n2219a2n2905a2n2221a2n2906a2n21022n4036bcy65ebfx84bfx85zt86zt88zt89
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2N2369 SOT-23
Abstract: BAW66 diode marking w8 BZX88-C7V5 BAW* diode W6 marking sot-23 baw 92 Z6 DIODE BZX88C8V2 BAW63A
Contextual Info: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast
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baw63bzx88-c10bzx88-c11bzx88-c12+16bzx88-c13bzx88-c15bzx88-c16bzx88-c18bzx88-c20bzx88-c222n2369 sot-23baw66diode marking w8bzx88-c7v5baw* diodew6 marking sot-23baw 92z6 diodebzx88c8v2baw63a
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2N2477
Abstract: 2N2222 2N2219 transistor 2N2938 2N2221 2N2483 FF2221E FF2221J FF2222E FF2222J
Contextual Info: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium
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ff3725jff2221eff2221j2n2221+10ff2222eff2222j2n2222ff2483eff2483j2n2907a2n24772n2219 transistor2n29382n2483
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bcy79 equivalent
Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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bfs362n930bs9365baw63+9bs9302bfs36a2n929baw63abcy79 equivalent2n3053 equivalentbcy78 equivalent2n2905a equivalentf025
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CV7753
Abstract: ZT1701 CV7644 ZT1483 ZT187 CV7371 CV7373 ZT80 ZT83 ZT84
Contextual Info: ZT80-ZT180 Series— Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA The diagram shows the wide range of applications for which the TO-18 encapsulated ZT80 Series-ZT180 Series vCE SAT 0.3
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zt80-zt180100maseries-zt180zt110-zt280+13cv7373cv7644cv7371cv7372zt183zt184cv7753zt1701zt1483zt187zt80zt83zt84
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2N4427 equivalent
Abstract: ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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bfs362n930bs9365baw63+14bs9302bfs36a2n929baw63a2n4427 equivalentzt ferranti2n2369 equivalent2n2708bzx88-c4v3diode baw67f025ic marking z7j 2n2369marking g5
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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BC239C equivalent
Abstract: BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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bfs362n930bs9365baw63+14bs9302bfs36a2n929baw63abc239c equivalentbc550c equivalentbc237a equivalentbc238b equivalentbc548c equivalentbc238a equivalentbc108b equivalentbc549c equivalentbc183 equivalentbc237b equivalent
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2N4036
Abstract: TRANSISTOR BC140 transistor 2N2219 BUY90 ZT Ferranti 2N2102 2N2405 2N2708 2N3866 2N4427
Contextual Info: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in these tables are designed for high frequency operation Amplifier and Oscillator applications. The tables should be referred to in conjunction with the RF Section which contains details
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2n9182n2708buy92buy91+11buy902n40362n4037tp-39transistor bc140transistor 2n2219zt ferranti2n21022n24052n38662n4427
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