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ON Semiconductor
BC636TA Trans GP BJT PNP 45V 1A 3-Pin TO-92 Ammo - Ammo Pack (Alt: BC636TA)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet (2) BC636TA Ammo Pack 0 2 Weeks 2,000 - - - - $0.02692 More Info
BC636TA Ammo Pack 0 2 Weeks, 2 Days 1 €0.0732 €0.05229 €0.0305 €0.02614 €0.02614 More Info
Newark element14 BC636TA Cut Tape 953 1 $0.048 $0.048 $0.048 $0.048 $0.048 More Info
RS Components (2) BC636TA Package 1,500 100 - - £0.063 £0.048 £0.028 More Info
BC636TA Reel 9,100 500 - - - £0.048 £0.028 More Info
element14 Asia-Pacific BC636TA 803 1 $0.444 $0.3 $0.125 $0.086 $0.057 More Info
Farnell element14 BC636TA 859 5 - £0.165 £0.0661 £0.0465 £0.0465 More Info
ON Semiconductor
BC636 BIPOLAR TRANSISTOR, PNP, -45V TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:100MHz; Power Dissipation Pd:1W; DC Collector Current:-1A; DC Current Gain hFE:40hFE; No. of Pins:3Pins RoHS Compliant: Yes
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 BC636 Bulk 0 1 $0.3 $0.244 $0.129 $0.057 $0.057 More Info
Rochester Electronics BC636 10,000 1 $0.03 $0.03 $0.03 $0.03 $0.03 More Info
element14 Asia-Pacific BC636 0 1 $0.347 $0.347 $0.137 $0.077 $0.077 More Info
SMC Corporation of America
MBC63-60 CYL; TIE ROD
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Allied Electronics & Automation MBC63-60 Bulk 0 1 $206.114 $206.114 $206.114 $206.114 $206.114 More Info
SMC Corporation of America
MDBC63-600 CYL; TIE ROD; AUTO-SW
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Allied Electronics & Automation MDBC63-600 Bulk 0 1 $297.086 $297.086 $297.086 $297.086 $297.086 More Info
Festo
DSBC-63-60-PPVA-N3 Cylinder; standard; DSBC-63-60-PPVA-N3
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Allied Electronics & Automation DSBC-63-60-PPVA-N3 Bulk 0 1 $247.63 $235.25 $235.25 $235.25 $235.25 More Info
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Festo
DSBC-63-60-PPSA-N3 Cylinder; standard; DSBC-63-60-PPSA-N3
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Allied Electronics & Automation DSBC-63-60-PPSA-N3 Bulk 0 1 $241.7 $229.62 $229.62 $229.62 $229.62 More Info
Festo
DSBC-63-60-D3-PPSA-N3 Cylinder; std; air; ISO 15552; 63x60mm stroke; self adj cushion; sensing D3
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Allied Electronics & Automation DSBC-63-60-D3-PPSA-N3 Bulk 0 1 $260.59 $260.59 $260.59 $260.59 $260.59 More Info
Festo
DSBC-63-60-D3-PPVA-N3 Cylinder; std; air; ISO 15552; 63x60mm stroke; adjustable cushion; sensing D3
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Allied Electronics & Automation DSBC-63-60-D3-PPVA-N3 Bulk 0 1 $265.44 $265.44 $265.44 $265.44 $265.44 More Info
Fairchild Semiconductor Corporation
BC636 Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics BC636 3,540 1 $0.1 $0.1 $0.09 $0.08 $0.08 More Info
Fairchild Semiconductor Corporation
BC636TA Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics BC636TA 11,134 1 $0.03 $0.03 $0.03 $0.03 $0.03 More Info
Fairchild Semiconductor Corporation
BC636TFR Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics BC636TFR 7,695 1 $0.03 $0.03 $0.03 $0.03 $0.03 More Info
ON Semiconductor
BC636-16ZL1
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics BC636-16ZL1 24,000 1 $0.05 $0.05 $0.04 $0.04 $0.04 More Info
ON Semiconductor
BC636ZL1
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics BC636ZL1 40,000 1 $0.03 $0.03 $0.03 $0.03 $0.03 More Info
Philips Semiconductors
BC636
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
America II Electronics BC636 11,819 - - - - - More Info
NXP Semiconductors
BC636
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
America II Electronics BC636 1,644 - - - - - More Info
Continental Device India Ltd
BC636 Transistor: PNP; bipolar; 45V; 1A; 0.8/2.75W; TO92
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
TME Electronic Components BC636 2,265 5 - $0.125 $0.0624 $0.0551 $0.0495 More Info
NXP Semiconductors
BC63616 Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
ComS.I.T. BC63616 568 - - - - - More Info
Amphenol Corporation
AIBC6-36-4SS-025 GT 3C 3#0 SKT PLUG
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
PEI Genesis AIBC6-36-4SS-025 5 1 $115.84 $115.84 $115.84 $115.84 $115.84 More Info
Others
BC636 INSTOCK
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Chip One Exchange BC636 892 - - - - - More Info

BC636 datasheet (83)

Part Manufacturer Description Type PDF
BC636 Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Original PDF
BC636 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
BC636 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
BC636 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
BC636 Infineon Technologies TRANS GP BJT PNP 45V 1A 3TO-92 Original PDF
BC636 Motorola High Current Transistors Original PDF
BC636 Philips Semiconductors PNP GENERAL PURPOSE MEDIUM-POWER TRANSISTORS Original PDF
BC636 Philips Semiconductors PNP medium power transistors Original PDF
BC636 Siemens Transistor / Diode Selection Guide Original PDF
BC636 Siemens Cross Reference Guide 1998 Original PDF
BC636 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
BC636 Siemens NPN Silicon AF Transistor Original PDF
BC636 STMicroelectronics SMALL SIGNAL PNP TRANSISTOR Original PDF
BC636 Bharat Electronics Shortform Transistor Data Scan PDF
BC636 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
BC636 Crimson Semiconductor Transistor Selection Guide Scan PDF
BC636 Micro Electronics Silicon Transistors Scan PDF
BC636 Micro Electronics Medium Power Amplifiers and Switches Scan PDF
BC636 Micro Electronics Semiconductor Device Data Book Scan PDF
BC636 Motorola European Master Selection Guide 1986 Scan PDF

BC636 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - bc640

Abstract: bc636 bc638
Text: INFORMATION °C/W Device BC636 BC636ZL1 BC636­16ZL1 BC638 BC638ZL1 BC640 BC640ZL1 BC640­16 Package TO­92 TO , BC636 , BC636-16 , BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com , Industries, LLC, 2001 266 June, 2000 ­ Rev. 1 Publication Order Number: BC636 /D BC636 , BC636­16 , BC636­16 BC638 BC640 BC640­16 VCE(sat) VBE(on) 25 40 100 40 40 100 25 - - - - - - - - - - , 9.0 110 - - - MHz pF pF http://onsemi.com 267 BC636 , BC636­16 , BC638, BC640, BC640


Original
PDF BC636, BC636-16, BC638, BC640, BC640-16 BC636 BC638 BC640
2004 - BC640

Abstract: BC636 BC635 BC636-10 BC636-16 BC637 BC638 BC639 SC-43A
Text: .2 DC current gain BC636-10 100 250 VCEsat collector-emitter saturation voltage BC636-16 , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636 ; BC638; BC640 PNP medium , Semiconductors Product specification PNP medium power transistors BC636 ; BC638; BC640 FEATURES , ) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BC636 SC-43A DESCRIPTION , SOT54 Philips Semiconductors Product specification PNP medium power transistors BC636


Original
PDF M3D186 BC636; BC638; BC640 BC635, BC637 BC639. BC640 BC636 BC635 BC636-10 BC636-16 BC638 BC639 SC-43A
2009 - BC636

Abstract: Transistor Marking C3 BC636TFR BC635 BC636BU BC636TA BC636TAR BC636TF transistor bc635
Text: -92 BC636 BC636BU TO-92 BC636 BC636TA TO-92 BC636 BC636TAR TO-92 BC636 BC636TF TO-92 BC636 BC636TFR TO-92 BC636 BC636_J35Z TO-92 © 2009 Fairchild Semiconductor , BC636 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications · Complement to , =50MHz © 2009 Fairchild Semiconductor Corporation BC636 Rev. C3 100 MHz www.fairchildsemi.com 1 BC636 - PNP Epitaxial Silicon Transistor March 2009 BC636 - PNP Epitaxial Silicon Transistor


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PDF BC636 BC635 BC636 Transistor Marking C3 BC636TFR BC635 BC636BU BC636TA BC636TAR BC636TF transistor bc635
7Z104

Abstract: BC640-10 BC640 BC639 BC638-10 BC638 BC637 BC636-10 BC636 BC635
Text: = 10mA;-Vce=5 V fT typ. 50 MHz \ BC636-10 BC638-10 BC640-10 BC636-16 BC638-16 BC640-16 hFE hFE , are BC635, BC637 and BC639. QUICK REFERENCE DATA BC636 BC638 BC640 Collector-base voltage {open , By Philips Semiconductors. BC636 ; BC638; BC64CL L . _ _ ' PHILIPS INTERNATIONAL SbE D â , 134) BC636 BC638 BC640 Collector-base voltage (open emitter) -vcbo max. 45 60 100 V , Semiconductors. Silicon planar epitaxial transistors BC636 ; BC638; BC640 PHILIPS INTERNATIONAL CHARACTERISTICS Tj


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PDF BC635, BC637 BC639. BC636 BC638 BC640 7Z104 BC640-10 BC640 BC639 BC638-10 BC636-10 BC635
2001 - BC635 ECB

Abstract: BC638
Text: -92 TO-92 TO-92 3 3 3 N/A N/A $Y&3 BC636 ECB TAPE REEL BULK BULK BC636TA Full Production BC636BU Full , BC636 /638/640 BC636 /638/640 Switching and Amplifier Applications · Complement to BC635/637/639 , Ratings Ta=25°C unless otherwise noted Symbol VCER Parameter Collector-Emitter Voltage at RBE=1K : BC636 : BC638 : BC640 Collector-Emitter Voltage : BC636 : BC638 : BC640 VCEO Collector-Emitter Voltage : BC636 , Collector-Emitter Breakdown Voltage : BC636 : BC638 : BC640 Collector Cut-off Current Emitter Cut-off Current DC


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PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC635 ECB BC638
2003 - BC635

Abstract: BC636 BC636-AP
Text: BC636 ® SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment BC636 BC636 TO-92 / Bulk BC636-AP BC636 TO-92 s s s / Ammopack , Temperature February 2003 -1.5 A 1 W -65 to 150 o C 150 o C 1/5 BC636 , : Pulse duration = 300 µs, duty cycle 2 % 2/5 25 40 25 250 100 MHz BC636 TO , BC636 TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA DIM. A1 T T1 T2 d P0 P2 F1,F2


Original
PDF BC636 BC636-AP BC635 BC635 BC636 BC636-AP
2001 - bc640

Abstract: BC638 BC636
Text: ORDERING INFORMATION °C/W Device BC636 BC636ZL1 BC636-16ZL1 BC638 BC638ZL1 BC640 BC640ZL1 BC640-16 Package , BC636 , BC636-16 , BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com , Industries, LLC, 2001 June, 2000 - Rev. 1 346 Publication Order Number: BC636 /D BC636 , BC636-16 , , VCE = -2.0 Vdc) hFE BC636 BC636-16 BC638 BC640 BC640-16 VCE(sat) VBE(on) - 25 40 100 40 40 100 25 - , , BC636-16 , BC638, BC640, BC640-16 -1000 -500 IC, COLLECTOR CURRENT (mA) -200 -100 -50 -20 -10 -5 -2 -1


Original
PDF BC636, BC636-16, BC638, BC640, BC640-16 BC636 BC638 BC640
2006 - 639 TRANSISTOR PNP

Abstract: 638 transistor bc636 npn transistor bc640 transistor C 639 W BC639-BC640 NPN transistor 500ma TO-92 transistor bC640 OF CDIL BC636 BC639
Text: SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636 , 638, 640 PNP TO-92 Plastic Package , free air Junction to Ambient SYMBOL VCEO VCBO VEBO IC PD BC635 BC636 45 45 *PD PD , CONDITION VCEO IC=1mA, IB=0 Collector Emitter Voltage BC635/ BC636 BC637/BC638 BC639/BC640 VCBO IC=100µA, IE=0 Collector Base Voltage BC635/ BC636 BC637/BC638 BC639/BC640 VEBO IE=10µA, IC=0 Emitter , SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636 , 638, 640 PNP TO-92 Plastic Package


Original
PDF BC635, BC636, C-120 BC640Rev 030106E 639 TRANSISTOR PNP 638 transistor bc636 npn transistor bc640 transistor C 639 W BC639-BC640 NPN transistor 500ma TO-92 transistor bC640 OF CDIL BC636 BC639
BC640

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components BC636-10 BC636-16 BC638 BC640   , =-2Vdc, IC=-5mAdc) DC Current Gain (VCE=-2Vdc, IC=-150mAdc) BC636-10 BC636-16 ,BC638 ,BC640 DC Current , Value -45 -60 -100 -45 -60 -80 -5.0 -1.0 -100 -65 to +150 -65 to +150 BC636 BC638 BC640 BC636 BC638 BC640 Emitter-Base Voltage Collector Current Base Current Junction Temperature , ) VBE(on) fT Collector-Emitter Breakdown Voltage (IC=-1mAdc,IB=0) BC636 BC638 BC640 Collector


Original
PDF BC636-10 BC636-16 BC638 BC640 830mWatts BC640
2009 - BC640

Abstract: bc636 BC638 transistor bC636 BC636-10 BC636-16 BC638-16 BC640-16 bc638 transistor
Text: =100MHz 100 MHz hFE(2) BC636-10 BC636-16 , BC638-16, BC640-16 63-160 100-250 Typical , JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636 , Value -100 BC636 -45 BC638 -60 BC640 V -60 BC640 Collector-Emitter Voltage 3. BASE -45 BC636 BC638 VCEO Units -80 1 2 3 V Emitter-Base Voltage -5 , voltage V(BR)CEO Collector cut-off current V(BR)EBO BC636 -45 -60 -80 IE=-100A,IC


Original
PDF BC636 BC638 BC640 BC636 BC638 150mA BC640 transistor bC636 BC636-10 BC636-16 BC638-16 BC640-16 bc638 transistor
2005 - transistor BC636

Abstract: BC635 BC636 BC636BU BC636TA BC636TAR BC636TF BC636TFR
Text: www.fairchildsemi.com Device Marking Device BC636 BC636BU TO-92 BC636 BC636TA TO-92 BC636 BC636TAR TO-92 BC636 BC636TF TO-92 BC636 BC636TFR TO-92 - BC636 Rev. C2 , BC636 PNP Epitaxial Silicon Transistor BC636 PNP Epitaxial Silicon Transistor Switching and , = -500mA fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=50MHz BC636 Rev. C2 1 , 2 Tape Width - 2,000 - 2,000 www.fairchildsemi.com BC636 PNP Epitaxial


Original
PDF BC636 BC636 BC635 transistor BC636 BC635 BC636BU BC636TA BC636TAR BC636TF BC636TFR
2006 - c63610

Abstract: bc636 BCX51 c636 philips
Text: BC636_638_640_5 BCP51_52_53_5 BCX51_52_53_4 Document ID BC636_BCP51_BCX51_6 20060329 Modifications , BC636-10 BCP51 BCP51-10 BCP51-16 BCX51 BCX51-10 BCX51-16 Marking codes Marking code C636 C63610 BCP51 , out of the previous data sheets BC636_638_640_5 , BCP51_52_53_5 and BCX51_52_53_4. Table 1 "Product , Product specification 9397 750 13575 BC636_638_640_4 9397 750 10764 BCP51_52_53_4 9397 750 08743 BCX51_52_53_3 BC636_638_640_5 BCP51_52_53_5 BCX51_52_53_4 20041011 20030206 20011010 9397 750 14044


Original
PDF BC636; BCP51; BCX51 BC636 BCP51 SC-43A SC-73 SC-62 O-243 c63610 bc636 BCX51 c636 philips
2001 - 24825

Abstract: BC639 Philips BC636 BC640 BC638-16 BC638 BC637 BC636-16 BC636-10 BC636
Text: current gain IC = -150 mA; VCE = -2 V; see Fig.2 BC636-10 100 250 VCEsat collector-emitter saturation voltage BC636-16 ; BC638-16; BC640-16 IC = -500 mA; IB = -50 mA - -0.5 V , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636 ; BC638; BC640 PNP medium , Semiconductors Product specification PNP medium power transistors BC636 ; BC638; BC640 FEATURES , BC636 -45 V - -60 V BC640 - -100 V BC636 - -45 V BC638 -


Original
PDF M3D186 BC636; BC638; BC640 BC635, BC637 BC639. 24825 BC639 Philips BC636 BC640 BC638-16 BC638 BC636-16 BC636-10 BC636
bc636

Abstract: BC638-16 Plastic Encapsulate Transistors BC640-16 transistor bC640 Diode bc640 BC640 pnp bc636 transistor BC636-16 BC638
Text: =-150mA BC636-10 DC current gain BC636-16 , BC638-16, BC640-16 hFE(3) Collector - emitter saturation , 100 V V MHz CLASSIFICATION OF h FE(2) RANK BC636-10 BC636-16 , BC638-16, BC640 , BC636 /638/640 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS , Voltage SYMBOLS VALUES UNIT VCEO BC636 V -60 V BC640 Collector - Base Voltage -45 BC638 -80 V -45 V -60 V VCBO BC636 BC638 -100 V VEBO -5


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PDF BC636/638/640 BC636 BC640 BC638 -500mA -500mA, -50mA bc636 BC638-16 Plastic Encapsulate Transistors BC640-16 transistor bC640 Diode bc640 BC640 pnp bc636 transistor BC636-16 BC638
bc638

Abstract: No abstract text available
Text: 5 0 mA lc = -5 0 0 mA hFi£ 40 40 25 = 250 hFE DC current gain BC636-10 ; BC638-10; BC640-10 BC636-16 ; BC638-16; BC640-16 lc = -1 5 0 mA; V Ce - 2 V; see Fig.2 63 100 160 , current (max. 1 A) · Low voltage (max. 80 V). BC636 ; BC638; BC640 PINNING PIN 1 2 base collector , REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BC636 BC638 BC640 open em itter CONDITIONS - MIN. MAX. -4 5 -6 0 -1 0 0 V V V UNIT VcEO collector-em itter voltage BC636


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PDF BC636; BC638; BC640 BC635, BC637 BC639. BC636 BC638 BC640
Not Available

Abstract: No abstract text available
Text: . 50 MHz * BC636-10 BC638-10 BC640-10 h FE > < 63 160 BC636-16 BC638-16 BC640 , N AUER PHILIPS/DISCRETE b'lE ] ■> bbS3R31 □QSTS'lb Ml? « A P X BC636 ; BC638; BC640 , BC639. QUICK REFERENCE DATA BC636 BC638 BC640 Collector-base voltage (open emitter) ~ v , AMFR PHILIPS/DISCRETE BC636 ; BC638; BC640 b 'lE bbSa'IBI 00275^7 323 T > JL RATINGS Limiting values in accordance w ith the Absolute Maximum System (IEC 134) BC636 BC638 BC640 -VC


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PDF bbS3R31 BC636; BC638; BC640 BC635, BC637 BC639. BC636 BC638
Bc636

Abstract: BC640 639 TRANSISTOR PNP BC638 pnp bc636 transistor
Text:  BC636 /638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS â , Collector Emitter Voltage BC636 VcER -45 V at RBe = 1Kohm BC638 -60 V BC640 -100 V Collector Emitter Voltage BC636 VoES -45 V BC638 -60 V BC640 -100 V Collector Emitter Voltage: BC636 VcEO -45 V , Emitter Breakdown Voltage BVceo lc= —10mA, lB=0 : BC636 -45 V :BC638 -60 V :BC640 -80 , =0 -0.1 li A DC Current Gain h fe Vce=-2V, lc = -5mA 25 : BC636 Vce = -2V, lc=-150mA 40 250 :BC638


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PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC640 639 TRANSISTOR PNP BC638 pnp bc636 transistor
2009 - Not Available

Abstract: No abstract text available
Text: =- 50mA,f=100MHz 100 MHz hFE(2) BC636-10 BC636-16 , BC638-16, BC640-16 63-160 100-250 A , JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636 , Voltage Value -100 BC636 -45 BC638 -60 BC640 V -60 BC640 Collector-Emitter Voltage 3. BASE -45 BC636 BC638 VCEO Unit -80 V Emitter-Base Voltage -5 V , breakdown voltage V(BR)CEO Collector cut-off current V(BR)EBO BC636 -45 -60 -80 IE


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PDF BC636 BC638 BC640 BC636 BC638 150mA
2000 - bc640

Abstract: Diode bc640 BC636 BC638
Text: BC636 /638/640 BC636 /638/640 Switching and Amplifier Applications · Complement to BC635/637/639 , -100 V V V : BC636 : BC638 : BC640 VCEO Value : BC636 : BC638 : BC640 VCES Parameter Collector-Emitter Voltage at RBE=1K : BC636 : BC638 : BC640 -45 -60 -80 V V V , Parameter Collector-Emitter Breakdown Voltage : BC636 : BC638 : BC640 Test Condition IC= -10mA, IB , hFE2 DC Current Gain VCE= -2V, IC= -5mA VCE= -2V, IC= -150mA hFE3 : All : BC636 : BC638


Original
PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 bc640 Diode bc640 BC636 BC638
Not Available

Abstract: No abstract text available
Text: BC636 /638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS · Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS ( T a = 25 1C ) C h aracte ristic Collector Emitter Voltage at R b e = 1 Kohm Collector Emitter Voltage BC636 BC638 BC640 BC636 BC638 BC640 BC636 BC638 BCS40 , =25t:) C h aracte ristic Coilector-Emitter Breakdown Voltage : BC636 :BC638 :BC640 Collector Cut-ofT , 250 160 -0.5 -1 100 V V c e (sat) V b e (on) fr V MHz 524 ELECTRONICS BC636 /638/640


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PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640
Not Available

Abstract: No abstract text available
Text: BC636 /638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O , Dissipation Junction Temperature Storage Temperature Symbol BC636 BC638 BC640 BC636 BC638 BC640 BC636 BC638 BC640 VCES VcEO V ebo lc lep Ib Po Tj T>tB Unit -4 5 -6 0 -1 , : BC636 :BC638 :BC640 Collector Cutoff Current Emitter Cutoff Current DC Current Gain : BC636 :BC638 , ELECTRONICS ■7^4145 DD2SDbh 33R BC636 /638/640 PNP EPITAXIAL SILICON TRANSISTOR STATIC


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PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640
Not Available

Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636 , 638, 640 PNP TO-92 Plastic Package , in free air Junction to Ambient SYMBOL VCEO VCBO VEBO IC PD BC635 BC636 45 45 *PD , SYMBOL TEST CONDITION VCEO IC=1mA, IB=0 Collector Emitter Voltage BC635/ BC636 BC637/BC638 BC639/BC640 VCBO IC=100µA, IE=0 Collector Base Voltage BC635/ BC636 BC637/BC638 BC639/BC640 VEBO , Data Sheet Page 1 of 5 SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636 , 638


Original
PDF BC635, BC636, 640Rev 030106E C-120
2007 - c63610

Abstract: transistor C636 SC-43A BCX54 BCX51 BCP54 BCP51 BC636-10 BC636 bc636 nxp
Text: BCP51_52_53_5 BCX51_52_53_4 BC636_638_640_5 20041011 Product specification - BC636_638_640_4 , 3 base 2 3 3 2 1 1 006aaa231 BC636_BCP51_BCX51_7 Product data sheet © NXP , . Marking Table 5. Marking codes Type number Marking code BC636 C636 BC636-10 C63610 , -16 AD BC636_BCP51_BCX51_7 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 07 , , tin-plated, mounting pad for collector 6 cm2. BC636_BCP51_BCX51_7 Product data sheet © NXP B.V. 2007


Original
PDF BC636; BCP51; BCX51 BC636 SC-43A BC635 BCP51 OT223 SC-73 BCP54 c63610 transistor C636 SC-43A BCX54 BCX51 BCP54 BCP51 BC636-10 bc636 nxp
2004 - BC636

Abstract: BC638 BC640
Text: BC636 /638/640 BC636 /638/640 Switching and Amplifier Applications · Complement to BC635/637/639 , -100 V V V : BC636 : BC638 : BC640 VCEO Value : BC636 : BC638 : BC640 VCES Parameter Collector-Emitter Voltage at RBE=1K : BC636 : BC638 : BC640 -45 -60 -80 V V V , Parameter Collector-Emitter Breakdown Voltage : BC636 : BC638 : BC640 Test Condition IC= -10mA, IB , hFE2 DC Current Gain VCE= -2V, IC= -5mA VCE= -2V, IC= -150mA hFE3 : All : BC636 : BC638


Original
PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC636 BC638 BC640
2002 - BC636

Abstract: BC638 BC640
Text: BC636 /638/640 BC636 /638/640 Switching and Amplifier Applications · Complement to BC635/637/639 , -100 V V V : BC636 : BC638 : BC640 VCEO Value : BC636 : BC638 : BC640 VCES Parameter Collector-Emitter Voltage at RBE=1K : BC636 : BC638 : BC640 -45 -60 -80 V V V , Parameter Collector-Emitter Breakdown Voltage : BC636 : BC638 : BC640 Test Condition IC= -10mA, IB , hFE2 DC Current Gain VCE= -2V, IC= -5mA VCE= -2V, IC= -150mA hFE3 : All : BC636 : BC638


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PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC636 BC638 BC640
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