BC63 Search Results

BC639

Abstract: BC639-16 BC639G BC63 BC639 pin details BC637G BC639RL1G BC637 BC637RL1G bc637 050
Contextual Info: BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Symbol BC637 BC639 BC637 BC639 Emitter - Base Voltage

BC635

Abstract: BC636 BC636-AP
Contextual Info: BC636 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment BC636 BC636 TO-92 / Bulk BC636-AP BC636 TO-92 • ■ ■ / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY

bc736

Abstract: BC635 BC637 BC639
Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

bc639

Abstract: BC635 BC637 transistor bc635 bc635 datasheet transistor BC639 BC639-16 BC639-10 transistor 639
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 BC635/637/639 Plastic-Encapsulate Transistors TRANSISTOR NPN TO-92 FEATURES High current transistors 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

BF194

Abstract: BC639 BC639-10 BC639-16 BCX58 BCX58-10 BCX58-7 BCX58-8 BCX58-9 BCX59
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. SC637-16 BC639 BC639-10 BC639-16 ^C80 Vceo (V) (V) Min Min 60 80 80 80 60 80 80 80 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^EBO PD (W) W Min @Tc=25’( 5 5 5 5 0.8 0.8

BC638

Abstract: transistor bc638 BC637 BC638BU BC638TA BC638TF BC638TFR Bc638 transistor PNP
Contextual Info: BC638 PNP Epitaxial Silicon Transistor BC638 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC637 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter

bc639

Abstract: BC637 BC635 TRANSISTOR E C B BC635 bc639 equivalent
Contextual Info: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers 1.Emitter 2.Collector 3.Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter

bc639

Abstract: BC635 TRANSISTOR E C B BC637 BC635 bc639 equivalent C 14M
Contextual Info: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC639 Features • Lead Free Finish/Rohs Compliant "P"Suffix designates Compliant. See ordering information

Contextual Info: MCC TM Micro Commercial Components BC636-10 BC636-16 BC638 BC640
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Through Hole Package Capable of 830mWatts of Power Dissipation

transistor C639

Abstract: transistor C635 c639 transistor C639 w
Contextual Info: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS T, = 25°C Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635

Contextual Info: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A ・Complementary to BC637. N E K SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC639 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. EMITTER PCM: 1 W (Tamb=25℃) 2. COLLECTOR Collector current 1 A ICM: Collector-base voltage 100 V V(BR)CBO:

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636,BC638,BC640 TRANSISTOR PNP TO-92 FEATURES High current transistors 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR Symbol VCBO VCEO Parameter

BC838

Abstract: BC640 bc636 npn transistor BC63 transistor BC639 BC635 BC636 BC637 BC638 BC639
Contextual Info: B C 6 3 5 THRU’ B C 6 4 0 ÏA COMPLEMENTARY SILICON TRANSISTORS BC635, BC637, BC639 NPN and BC636, BC638, BC640 (PNP) are complementary silicon epitaxial planar transistors ‘ TO-92 for AF driver stages and amplifier applications up to 1A. ABSOLUTE MAXIMUM RATINGS

BC640

Abstract: BC638 BC636 bc639 bc638-10 BC635 BC636-10 BC637 bc636 npn transistor Silicon Epitaxial Planar Transistor philips
Contextual Info: N AUER PHILIPS/DISCRETE bTE T> • bbS3R31 □OSTS'ib 4=17 ■ APX BÜ636; BC638; BC640 A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 envelope, primarily intended for use in driver stages of audio amplifiers. N-P-N complements are BC635, BC637 and BC639.

bc639

Abstract: BC637 BC635 BC635 TRANSISTOR E C B
Contextual Info: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC

BC635

Contextual Info: Transistors BC635 USHA INDIA LTD SWITCHING AND AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Rating Unit Collector Emitter Voltage at R BE = 1Kohm VcER 45 V Collector Emitter Voltage VcES 45 V Collector Emitter Voltage

BC636

Abstract: BC638 BC640
Contextual Info: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

Contextual Info: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. FEATURES 2000. 10. 2 Revision No : 0 1/1

Bc636

Abstract: BC640 639 TRANSISTOR PNP BC635 BC638
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC 635/637/639 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter Voltage at R b e = 1 Kohm C ollecto r E m itter Voltage

BC639

Abstract: BC635 BC637 transistor bc639 BC639-10
Contextual Info: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC635/637/639 TRANSISTOR NPN TO-92 FEATURES High current transistors 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

24825

Abstract: BC639 BC635 BC636 BC636-10 BC636-16 BC637 BC638 BC638-16 BC640
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640

BC637

Abstract: BC638
Contextual Info: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A ᴌComplementary to BC637. N E K MAXIMUM RATING Ta=25ᴱ J SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60