bc736
Abstract: BC635 BC637 BC639
Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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bc736
Abstract: transistor C 639 W transistor BC637 complement BC635 BC639 BC637
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • C om plem ent to BC 635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter V oltage at Rbe=1 Kohm C ollecto r E m itter V oltage C ollecto r E m itter V oltage
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bc635/637/639bc635/638/640bc635bc637+4bc639bc736transistor c 639 wtransistor bc637 complement
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R5C485-LQFP144
Abstract: bc725 BC698 BC236 BC709 bc711 BC717 BC683 RC300MB SMD RA3 PNP
Contextual Info: 8 Part List 8-1 Exploded View 8-1-1 System Exploded Housing Bottom P28 8-1 This Document can not be used without Samsung’s authorization. 8 Part List No Part Name Code No Q’ty Specification Vendor 1 UNIT/HOUSING-BOTTOM BA75-01374A 1 SON & ARRK 2 FAN BA31-00018A
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ba75-01374aba31-00018aba92-02744aba75-01375a+16ba59-01294aba61-00910aba43-00134aba75-01376aba59-01052aba75-01377ar5c485-lqfp144bc725bc698bc236bc709bc711bc717bc683rc300mbsmd ra3 pnp
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bc736
Abstract: bc635 BC637 BC639
Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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bc635/637/639bc636/638/640bc635bc637+2bc639bc736
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bc736
Abstract: transistor C 639 W bc639 BC635 BC637
Contextual Info: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage
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bc635/637/639bc635/638/640bc635bc637+3bc639bc736transistor c 639 w
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1g22SB
Abstract: SB3211 BC741 SIS 648 SB315 CP2216 AMS1117 1104 BC246 RB342 diode sb315
Contextual Info: M A R G A I D K C O L B M E T S Y S D 3 K PCB LAYER High Speed DDR-SDRAM K4D263238A-GC36 Clock Gen CY28381 100MHz P.17,18 DeskTop CPU Northwood FSB 400/533MHz P.11 2.5V 266/333MHz P.19 275MHz P.5,6 P.3 DDR*2 CRT CONN Delay Buffer CY28352 2.5V 266/333MHz P.4
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cy28381k4d263238a-gc36100mhz400/533mhz+15275mhz266/333mhzcy28352nv18-pro133mhz1g22sbsb3211bc741sis 648sb315cp2216ams1117 1104bc246rb342diode sb315
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BC635 TRANSISTOR E C B
Abstract: transistor C 639 W
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector Emitter Voltage at Rbe=1 Kohm Collector Emitter Voltage Collector Emitter Voltage
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bc635/637/639bc635/638/640bc635bc637+3bc639bc635 transistor e c btransistor c 639 w
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BC245C
Abstract: BC822 bc810 max1987 BC495 RTL8110S-32 BC819 BC823 ALC202A ar9270
Contextual Info: 5 4 3 S04 BLOCK DIAGRAM Dothan Yonah /Alviso D +1.8V +1.5V 478 Pins (Micro-FCPGA) FSB 4X100MHZ 4X133MHZ VDIMM DDR SDRAM 2.5V, 400/500MHz DDR-SODIMM1 Clocks +3V CPU Thermal Sensor P:5 MAX6648 PCI-Express x16(GFX) +1.5V CK410 CYPRESS: CY28411 IDT Video Controller
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max1987max1715max1999ck410+15cy28411cv125max1993max8550max6648max8527bc245cbc822bc810bc495rtl8110s-32bc819bc823alc202aar9270
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bc725
Abstract: BC248 BC249 BC195 BC105* BC106* BC107* BC108* BC109* BC110 bc711 BC710 bc188 BC712 BC246
Contextual Info: This Document can not be used without Samsung’s authorization. 9 Schematic Material List 9-1 Main Board Part List Code Location Category Spec 0902-001840 D 730 IC-MICROPROCESSOR 730PGA,1.6GHz,64Bit,uF 3709-001236 J1 CONNECTOR-CARD EDGE 68P,1.27MM,ANGLE,AU
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100nf2k/33ohm220pf10000nf+10bc725bc248bc249bc195bc105* bc106* bc107* bc108* bc109* bc110bc711bc710bc188bc712bc246
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BC639 collector
Abstract: BC635 transistor 639 bc639 640 TRANSISTOR NPN transistor BC637 complement BC637
Contextual Info: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25t; Characteristic Collector Emitter Voltage at R a E = 1K ohm Collector Emitter Voltage Collector Emitter Voltage
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bc635/637/639bc635/638/640bc635bc637+5bc639bc639 collectortransistor 639640 transistor npntransistor bc637 complement
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bc736
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS T O -92 • C om plem ent to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Em itter V oltage at R be =1 Kohm : BC635 : BC637 : BC639
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bc635/637/639bc635/638/640bc635bc637+2bc639bc736
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BC249
Abstract: BC248 BC246 bc711 bc725 bc732 BC247 BC217 samsung R519 BC735
Contextual Info: This Document can not be used without Samsung’s authorization. 9 Schematic Material List 9-1 Main Board Part List Code Location Category Spec 0902-001840 D 730 IC-MICROPROCESSOR 730PGA,1.6GHz,64Bit,uF 3709-001236 J1 CONNECTOR-CARD EDGE 68P,1.27MM,ANGLE,AU
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100nf2k/33ohm220pf10000nf+10bc249bc248bc246bc711bc725bc732bc247bc217samsung r519bc735
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