2N56 Search Results

2N5685

Abstract: 2n5686
Contextual Info: TYPES 2N5685, 2N5686 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS • 300 Watts at 25° C Case Temperature • 50-A Rated Continuous Collector Current • Min f j of 2 M Hz at 10 V , 5 A TYPES 2N5685, 2 N 5686 BULLETIN NO. DL-S 7111591, DECEMBER FOR PO W ER -AM PLIFIER A N D HIGH-SPEED-SW ITCHING APPLICATIO N S

2N6030

Abstract: 2N6029 2N5629 2N5630
Contextual Info: Inchange Semiconductor Product Specification 2N6029 2N6030 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5629 2N5630 ・High power dissipations APPLICATIONS ・For high voltage and high power amplifier applications

2N5629

Abstract: 2N5630 2N6029 2N6030
Contextual Info: Inchange Semiconductor Product Specification 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6029 2N6030 APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base

2N5662

Abstract: 2N5660 2N5661 1000C 2N5663
Contextual Info: TECHNICAL DATA 2N5660 JANTX, JTXV 2N5661 JANTX, JTXV 2N5662 JANTX, JTXV 2N5663 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/454 NPN SILICON POWER TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage

2N5683

Abstract: 2N5684 2N5683 equivalent all ic data all ic datasheet 1000C 2000C 2N5684/D
Contextual Info: TECHNICAL DATA 2N5683 JAN, JTX, JTXV 2N5684 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/466 PNP POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

2N5632

Abstract: 2N5633 2N5634
Contextual Info: Product Specification www.jmnic.com 2N5632 2N5633 2N5634 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector-emitter saturation voltage APPLICATIONS ・For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION

2N5601

Abstract: 2N5597 2N5599 2N5603
Contextual Info: Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For high frequency power amplifier ;

2N5631

Abstract: 2N6031
Contextual Info: Product Specification www.jmnic.com 2N5631 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6031 ・High collector-emitter sustaining voltage ・High DC current gain ・Low collector-emitter saturation voltage APPLICATIONS

2N5672

Abstract: 2N5671 2N5671JAN 15ADC 2N5671 JAN
Contextual Info: TECHNICAL DATA 2N5671 JAN, JTX, JTXV 2N5672 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/488 NPN HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

2N5680

Abstract: 2N5867
Contextual Info: PNP S A T V O L T A G E S M a x . m BREAKDO W N VO LTAG ES Tl • PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST !c 'c C ASE V CB V CE V EB V CE (V) (A) M in. M ax. (A) !b (A) V CE (V) V BE (V) 2N5613 TO-3 80 60 5.5 5 2.5 70 200 2.5 0.5 1.5 2 2N 5615

2N5597

Abstract: 2N5601 2N5599 2N5603
Contextual Info: Inchange Semiconductor Product Specification 2N5597 2N5599 2N5601 2N5603 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For high frequency power amplifier ;

5617

Abstract: 2N5613 2N5615 2N5617 2N5619
Contextual Info: Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5613 2N5615 2N5617 2N5619 DESCRIPTION ・With TO-3 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications

2N5684

Abstract: 2N5686 PNP 2N5684
Contextual Info: ON Semiconductort PNP High−Current Complementary Silicon Power Transistors 2N5684 NPN 2N5686 . . . designed for use in high−power amplifier and switching circuit applications. • High Current Capability − • • w IC Continuous = 50 Amperes. DC Current Gain −

2N5604

Contextual Info: 2N5604 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

2N5597

Abstract: 2N5599 2N5601 2N5603
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.

5609

Abstract: DATASHEET 5609 2*5609 2N5607 2N5609 2N5605 5609 c 2N5611
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications

2N5686

Abstract: 2N5684 PNP 2N5684 amplifier 2N5686
Contextual Info: ON Semiconductort PNP High-Current Complementary Silicon Power Transistors 2N5684 NPN 2N5686 . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – • • IC Continuous = 50 Amperes. DC Current Gain –

2N5663

Contextual Info: "72 GENERAL SEMICONDUCTOR 3918590 GEN ER AL »TjBTlñS'iO ODDITBE D 72C 01932 S E M IC O N D U C TO R General 3 ^ Sem iconductor Industries, Inc • D 'T ''3 3 > -o S ' S q U H R E Tl CDMPRNY T yp ic a l D evice T ype: 2N5660— 2N5663 5 AMP Fast Switching

Contextual Info: GENERAL 3 9 1 6 590 ^ Ta SEMICONDUCTOR GENERAL SEMICONDUCTOR A General Semiconductor Industries, Inc • d F J b tiô s td 72C 0 1 9 3 0 D □ □ d i cî 3 0 7 ~ b 33 NPN TRANSISTOR CHIP « 5 Q U B R E TI COMPANY Typical Device Type: 2N1724, 2N5671, 2N5672

2N5680

Abstract: 2N5679 2N5681 2N5682
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS.

2N5662JX

Abstract: 2N5662 2N5662J 2N5662JV
Contextual Info: 2N5662 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Power Transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5662J • JANTX level (2N5662JX)

2n5657

Contextual Info: 2N5655, 2N5657 Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in line−operated equipment such as audio output amplifiers; low−current, high−voltage converters; and AC line relays. http://onsemi.com 0.5 AMPERE POWER TRANSISTORS

A 3131 IC

Abstract: 2n5651
Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. TYPE: 2N5651 3131 S. E. JAY STREET, STUART, FL 34997 PH: 772 283-4500 FAX: (772)286-8914 Website: http://www.semi-tech-inc.com Email: data1@semi-tech-inc.com CASE OUTLINE: TO-72 NPN SILICON TRANSISTOR

2N5664SMD

Contextual Info: SEME 2N5664SMD LAB MECHANICAL DATA Dimensions in mm inches  3 .6 0 (0 .1 4 2 ) M a x . FEATURES ! • HIGH VOLTAGE 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 1 0 .6 9 (0 .4 2 1 )