200NSEC Search Results

Contextual Info: FAST RECOVERY DIODE 25A /l200V /200nsec KSF25A120B FEA TU RES 3 31.209 47' 185' 1— 1 o Sim ilar to TO-247AC Case 1 5 .9 6 2 6 ) i I’ i5.3(.é«rV 3 ^ DIA 5.71.224) 5 3 (2081 O U ltra-Fast Rcovery a. Î r. r - I) - 20.3(.8i>0> 19 71.773) 43U 69) OLow Forward V oltage Drop

L43C

Abstract: teledyne philbrick 1430 TELEDYNE PHILBRICK 1435 A/SMD l43c
Contextual Info: WTELECYNE PHILBRICK I 1430 Fast Settling FET Input Operational Amplifier The 1430 is a high speed, precision, jiybrkj operational amplifier that combines fast settling times, low bias cur­ rents, high slew rate, wide bandwidth, and good phase margin. A guaranteed settling time of 200nsec (for a full

Contextual Info: BU RR -BR O W N [ ] OPA12HT Wide Temperature Range Fast-Slewing OPERATIONAL AMPLIFIER FEATURES • -55°C to + 175 °C SPECIFICATIO N S • 80V/Msec MIN S LEW R ATE 120 V/M*ec, typ • 200nsec S E T T LIN G T IM E , typ • H ERM ETIC PAC KAG E W ITH STANDARD PINO UT

5046C

Contextual Info: A S - 5 0 4 0 / A S - 5 0 5 1 Fam ily High Level CMOS Analog Gates FjflEM n L GENERAL DESCRIPTION FEATURES • Switches Greater Than 20 V p p Signals W ith • • Quiescent C urrent Less Than IfjA Overvoltage P rotection to ±25V • Break-Before-Make S w itching to F F 200nsec,

Contextual Info: l.lA / 1 0 0 ~ 2 0 0 V / t r r : 200nsec FAST RECOVERY DIODE 10 D F1 10DF2 FEATURES «Miniature Size ° Super Fast Recovery * Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 100 Volts thru 800 Volts Types Available ° 52mm Inside Tape Spacing Package Available

ir 30df2

Abstract: 30DF1 30DF2 30df 300F2 QDD2153 t10039 Diode 30df2
Contextual Info: FAST RECOVERY DIODE 3.3A/100— 200V/trr : 200nsec 30DF1 30DF2 FEATURES ° Super Fast Recovery ° Low Forward Voltage Drop « Low Power Loss, High Efficiency ° High Surge Capability ° 100 Volts through 600 Volts Types Available MAXIMUM RATINGS \ type 30DF1

Contextual Info: FAST RECOVERY DIODE 25 A/1200V/200nsec KSF25A120B FEATURES 3.64.142 ni* kîïilM)“ o Similar to TO-247AC Case o Ultra-Fast Rcovery oLow Forward Voltage Drop O Low Power Loss, High Efficiency o High Surge Capability oH igh Voltage KSF25A120B Dimensions in mm Inches)

25A 1200V

Abstract: KSF25A120B ksf2 KSF2SA120B
Contextual Info: FAST RECOVERY DIODE 25A/1200V/200nsec KSF2SA120B FEATU RES o Sim ilar to TO-247AC Case o Ultra-Fast Rcovery o L o w Forw ard V oltage Drop O Low Pow er Loss, High Efficiency o High Surge Capability o H ig h Voltage Dimensions in mm Inches ApplX>X‘ Net Weight :5-65 GramS

10DF1

Abstract: 10DF2 n439
Contextual Info: FAST RECOVERY DIODE 1.1A/100— 200V/trr : 200nsec 10DF1 10DF2 FEATURES ° Miniature Size 2.71.106 DIA 2.3 .091) -GO ° Super Fast Recovery » Low Forward Voltage Drop 0.9(.035) n r * 0.7Î.027) o Low Power Loss, High Efficiency 27(1.06) MIN ° High Surge Capability

DAC90BG

Abstract: DAC90SG
Contextual Info: B U R R -B R O W N « DAC90 Monolithic Microcircuit DIGITAL-TO-ANALOG CONVERTER FEATURES • 8-BIT RESOLUTION • CURRENT OUTPUT • FAST SETTLING 200nsec to ±0.2% • HERMETIC DUAL-IN-LINE PACKA6E • LOW COST • INTERNAL REFERENCE AND SCALING RESISTORS

DAC90BG

Abstract: DAC90 DAC90SG PDS-347C MIL-STD-83
Contextual Info: BU R R -BR O W N I b b DAC90 i Monolithic Microcircuit D IG ITA L-TO -A N A LO G CONVERTER FEATURES • 8-BIT RESOLUTION • CURRENT OUTPUT I • FAST SETTLING 200nsec to ± 0 .2 % • HERMETIC DUAL-IN-LINE PACKA6E • LOW COST • INTERNAL REFERENCE AND SCALING RESISTORS

sira

Abstract: OPA12HT
Contextual Info: B U R R -B R O W N l p s | O PA 12HT | 'I ? Wide Temperature Range Fast-Slewing OPERATIONAL AMPLIFIER FEATURES • -55°C to +175°C SPECIFICATIONS • 80V/Msec MIN SLEW RATE 120V // xSbc, typ • 200nsec SETTLING TIME, typ • HERMETIC PACKAGE WITH STANDARD PINOUT

MN376

Abstract: htc-0300a MN376H
Contextual Info: MN376 200nsec 12-Bit LIN EA R TR A C K -H O L D A M P L IF IE R MICRO NETWORKS DESCRIPTION • 200nsec Max Acquisition Time 10V Step to ±0.01% • 100nsec Max Track-to-Hold Settling Time • ±20psec Aperture Jitter • Use with MN5245/46 for 1MHz 12-Bit A/D Conversions;

Contextual Info: 10EF1 10EF2 l.lA /1 0 0 ~ 2 0 0 V /tr r : 200nsec FAST RECOVERY DIODE FEATURES ° Miniature Size 2.7 .106 MAX DIA * Super Fast Recovery o Low Forward Voltage Drop 0.7(.027) DIA 0.5(.020) o Low Power Loss, High Efficiency 2 7 ( 1 .0 6 ) MIN ° High Surge Capability

Contextual Info: SPD3909 Thru SPD3913 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering Information 1/ SPD39 _ _ _ 30A, 200nsec, 50-400 V

10EF1

Abstract: S 437 Diode 10EF2
Contextual Info: FAST RECOVERY DIODE 1.1A /100— 2 0 0 V /trr : 200nsec 10EF1 10EF2 FEATURES ° Miniature Size ° Super Fast Recovery ° Low Forward Voltage Drop 0 Low Power Loss, High Efficiency ° High Surge Capability ° 2 6mm and 52mm Inside Tape Spacing Package Available

MK4816-5

Abstract: MK3880 MK4816-3 LCSC 24 MK4116 MK4816-4 MK4816 ram
Contextual Info: MOSTEK FElDJEDMâEl 2K x 8-BIT PSEUDOSTATIC RAM M K 4 8 1 6 N /J -3 /4 /5 FEATURES □ O n-chip substrate bias generator □ Organized as 2048 x 8 bits Part Num ber Access Time Cycle Time M K 48 16-3 200nsec 430nsec □ Low power - 1 50m W active 25 m W standby

TE10A

Contextual Info: MN376 200nsec 12- Bi t LIN EA R T R A C K -H O L D A M P L IF IE R H in r^ n n „ MICRO NETWORKS DESCRIPTION • 200nsec Max Acquisition Time 10V Step to ±0.01% • 100nsec Max Track-to-Hold Settling Tim e • +20psec Aperture Jitter • Use with MN5245/46 for 1MHz

Contextual Info: FAST RECOVERY DIODE 3.3A/100— 200V/trr : 200nsec 30DF1 30DF2 FEATURES o Super Fast Recovery 5.8 .23 DIA °law Forward Voltage Drop 1.5(.059)DIA 1.30051) « Low Power Loss, High Efficiency 21(.83) MIN ° High Surge Capability ° 100 Volts through 600 Volts Types Available

10EF1

Abstract: 10EF2
Contextual Info: FAST RECOVERY DIODE l.lA /10 0~ 20 0V /trr : 200nsec 10EF1 10EF2 FEATURES ° Miniature Size 2.7 .106 nlA M A X U1A « Super Fast Recovery o Low Forward Voltage Drop 0.7(.027)DIA 0.5(.020) •>Low Power Loss, High Efficiency 2 7 ( 1.0 6 ) ' M IN ° High Surge Capability

30DF1

Contextual Info: FAST RECOVERY DIODE 3 .3 A /1 0 0 — 2 0 0 V /trr : 200nsec 30DF1 30DF2 FEA TUR ES « Super Fast Recovery 5.8I.231DIA ° Low Forward Voltage Drop 1.51.059 D IA 1.31.051) o Low Power Loss, High Efficiency °High Surge Capability 2M.83) M IN ° 100 Volts through 600 Volts Types Available

P8085AH

Abstract: TMP8085AP TMP8085AP-2 TMP8085 TMP8156P MPU85-9
Contextual Info: TO SHIBA TMP8085A TMP8085AP-2/TMP8085AHP-2 8-BIT MICROPROCESSOR 1. GENERAL DESCRIPTION The TMP8085AP-2/TMP8085AHP-2, hereafter on referred to as TMP8085A, is a 8 bit micro processing unit MPU . TMP8085A uses a multiplexed data bus. The address is split between the 8 bit address bus and the 8 bit data bus. The on-chip address latches of

SLVS632

Contextual Info: TPS5430 www.ti.com SLVS632 – JANUARY 2006 5.5-V to 36-V, 3-A STEP-DOWN SWIFT CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • • • Wide Input Voltage Range: 5.5 V to 36 V Up to 3-A Continuous 4-A Peak Output Current

Contextual Info: Datasheet Dual Synchronous Buck Converter BD93291EFJ ●Description The BD93291EFJ is a dual synchronous buck converter. It integrates wide input voltage range 8.0V to 26V synchronous buck converter and low input voltage (Vout1 : 5.0V) synchronous buck converter.