200NSEC Search Results

Contextual Info: FAST RECOVERY DIODE 25A /l200V /200nsec KSF25A120B FEA TU RES 3 31.209 47' 185' 1— 1 o Sim ilar to TO-247AC Case 1 5 .9 6 2 6 ) i I’ i5.3(.é«rV 3 ^ DIA 5.71.224) 5 3 (2081 O U ltra-Fast Rcovery a. Î r. r - I) - 20.3(.8i>0> 19 71.773) 43U 69) OLow Forward V oltage Drop

Contextual Info: BU RR -BR O W N [ ] OPA12HT Wide Temperature Range Fast-Slewing OPERATIONAL AMPLIFIER FEATURES • -55°C to + 175 °C SPECIFICATIO N S • 80V/Msec MIN S LEW R ATE 120 V/M*ec, typ • 200nsec S E T T LIN G T IM E , typ • H ERM ETIC PAC KAG E W ITH STANDARD PINO UT

5046C

Contextual Info: A S - 5 0 4 0 / A S - 5 0 5 1 Fam ily High Level CMOS Analog Gates FjflEM n L GENERAL DESCRIPTION FEATURES • Switches Greater Than 20 V p p Signals W ith • • Quiescent C urrent Less Than IfjA Overvoltage P rotection to ±25V • Break-Before-Make S w itching to F F 200nsec,

Contextual Info: l.lA / 1 0 0 ~ 2 0 0 V / t r r : 200nsec FAST RECOVERY DIODE 10 D F1 10DF2 FEATURES «Miniature Size ° Super Fast Recovery * Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 100 Volts thru 800 Volts Types Available ° 52mm Inside Tape Spacing Package Available

ir 30df2

Abstract: 30DF1 30DF2 30df 300F2 QDD2153 t10039 Diode 30df2
Contextual Info: FAST RECOVERY DIODE 3.3A/100— 200V/trr : 200nsec 30DF1 30DF2 FEATURES ° Super Fast Recovery ° Low Forward Voltage Drop « Low Power Loss, High Efficiency ° High Surge Capability ° 100 Volts through 600 Volts Types Available MAXIMUM RATINGS \ type 30DF1

Contextual Info: FAST RECOVERY DIODE 25 A/1200V/200nsec KSF25A120B FEATURES 3.64.142 ni* kîïilM)“ o Similar to TO-247AC Case o Ultra-Fast Rcovery oLow Forward Voltage Drop O Low Power Loss, High Efficiency o High Surge Capability oH igh Voltage KSF25A120B Dimensions in mm Inches)

25A 1200V

Abstract: KSF25A120B ksf2 KSF2SA120B
Contextual Info: FAST RECOVERY DIODE 25A/1200V/200nsec KSF2SA120B FEATU RES o Sim ilar to TO-247AC Case o Ultra-Fast Rcovery o L o w Forw ard V oltage Drop O Low Pow er Loss, High Efficiency o High Surge Capability o H ig h Voltage Dimensions in mm Inches ApplX>X‘ Net Weight :5-65 GramS

10DF1

Abstract: 10DF2 n439
Contextual Info: FAST RECOVERY DIODE 1.1A/100— 200V/trr : 200nsec 10DF1 10DF2 FEATURES ° Miniature Size 2.71.106 DIA 2.3 .091) -GO ° Super Fast Recovery » Low Forward Voltage Drop 0.9(.035) n r * 0.7Î.027) o Low Power Loss, High Efficiency 27(1.06) MIN ° High Surge Capability

DAC90BG

Abstract: DAC90SG
Contextual Info: B U R R -B R O W N « DAC90 Monolithic Microcircuit DIGITAL-TO-ANALOG CONVERTER FEATURES • 8-BIT RESOLUTION • CURRENT OUTPUT • FAST SETTLING 200nsec to ±0.2% • HERMETIC DUAL-IN-LINE PACKA6E • LOW COST • INTERNAL REFERENCE AND SCALING RESISTORS

DAC90BG

Abstract: DAC90 DAC90SG PDS-347C MIL-STD-83
Contextual Info: BU R R -BR O W N I b b DAC90 i Monolithic Microcircuit D IG ITA L-TO -A N A LO G CONVERTER FEATURES • 8-BIT RESOLUTION • CURRENT OUTPUT I • FAST SETTLING 200nsec to ± 0 .2 % • HERMETIC DUAL-IN-LINE PACKA6E • LOW COST • INTERNAL REFERENCE AND SCALING RESISTORS

sira

Abstract: OPA12HT
Contextual Info: B U R R -B R O W N l p s | O PA 12HT | 'I ? Wide Temperature Range Fast-Slewing OPERATIONAL AMPLIFIER FEATURES • -55°C to +175°C SPECIFICATIONS • 80V/Msec MIN SLEW RATE 120V // xSbc, typ • 200nsec SETTLING TIME, typ • HERMETIC PACKAGE WITH STANDARD PINOUT

MN376

Abstract: htc-0300a MN376H
Contextual Info: MN376 200nsec 12-Bit LIN EA R TR A C K -H O L D A M P L IF IE R MICRO NETWORKS DESCRIPTION • 200nsec Max Acquisition Time 10V Step to ±0.01% • 100nsec Max Track-to-Hold Settling Time • ±20psec Aperture Jitter • Use with MN5245/46 for 1MHz 12-Bit A/D Conversions;

Contextual Info: 10EF1 10EF2 l.lA /1 0 0 ~ 2 0 0 V /tr r : 200nsec FAST RECOVERY DIODE FEATURES ° Miniature Size 2.7 .106 MAX DIA * Super Fast Recovery o Low Forward Voltage Drop 0.7(.027) DIA 0.5(.020) o Low Power Loss, High Efficiency 2 7 ( 1 .0 6 ) MIN ° High Surge Capability

10EF2

Abstract: 10EF1
Contextual Info: FAST RECOVERY DIODE l .lA / 1 0 0 ~ 2 0 0 V / t r r : 200nsec 1 0 E F 1 10 EF2 FEATURES ° Miniature Size ° Super Fast Recovery ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability » 26mm and 52mm Inside Tape Spacing Package Available

10EF1

Abstract: S 437 Diode 10EF2
Contextual Info: FAST RECOVERY DIODE 1.1A /100— 2 0 0 V /trr : 200nsec 10EF1 10EF2 FEATURES ° Miniature Size ° Super Fast Recovery ° Low Forward Voltage Drop 0 Low Power Loss, High Efficiency ° High Surge Capability ° 2 6mm and 52mm Inside Tape Spacing Package Available

MK4816-5

Abstract: MK3880 MK4816-3 LCSC 24 MK4116 MK4816-4 MK4816 ram
Contextual Info: MOSTEK FElDJEDMâEl 2K x 8-BIT PSEUDOSTATIC RAM M K 4 8 1 6 N /J -3 /4 /5 FEATURES □ O n-chip substrate bias generator □ Organized as 2048 x 8 bits Part Num ber Access Time Cycle Time M K 48 16-3 200nsec 430nsec □ Low power - 1 50m W active 25 m W standby

TE10A

Contextual Info: MN376 200nsec 12- Bi t LIN EA R T R A C K -H O L D A M P L IF IE R H in r^ n n „ MICRO NETWORKS DESCRIPTION • 200nsec Max Acquisition Time 10V Step to ±0.01% • 100nsec Max Track-to-Hold Settling Tim e • +20psec Aperture Jitter • Use with MN5245/46 for 1MHz

Contextual Info: FAST RECOVERY DIODE 3.3A/100— 200V/trr : 200nsec 30DF1 30DF2 FEATURES o Super Fast Recovery 5.8 .23 DIA °law Forward Voltage Drop 1.5(.059)DIA 1.30051) « Low Power Loss, High Efficiency 21(.83) MIN ° High Surge Capability ° 100 Volts through 600 Volts Types Available

10EF1

Abstract: 10EF2
Contextual Info: FAST RECOVERY DIODE l.lA /10 0~ 20 0V /trr : 200nsec 10EF1 10EF2 FEATURES ° Miniature Size 2.7 .106 nlA M A X U1A « Super Fast Recovery o Low Forward Voltage Drop 0.7(.027)DIA 0.5(.020) •>Low Power Loss, High Efficiency 2 7 ( 1.0 6 ) ' M IN ° High Surge Capability

30DF1

Contextual Info: FAST RECOVERY DIODE 3 .3 A /1 0 0 — 2 0 0 V /trr : 200nsec 30DF1 30DF2 FEA TUR ES « Super Fast Recovery 5.8I.231DIA ° Low Forward Voltage Drop 1.51.059 D IA 1.31.051) o Low Power Loss, High Efficiency °High Surge Capability 2M.83) M IN ° 100 Volts through 600 Volts Types Available

P8085AH

Abstract: TMP8085AP TMP8085AP-2 TMP8085 TMP8156P MPU85-9
Contextual Info: TO SHIBA TMP8085A TMP8085AP-2/TMP8085AHP-2 8-BIT MICROPROCESSOR 1. GENERAL DESCRIPTION The TMP8085AP-2/TMP8085AHP-2, hereafter on referred to as TMP8085A, is a 8 bit micro processing unit MPU . TMP8085A uses a multiplexed data bus. The address is split between the 8 bit address bus and the 8 bit data bus. The on-chip address latches of

SLVS632

Contextual Info: TPS5430 www.ti.com SLVS632 – JANUARY 2006 5.5-V to 36-V, 3-A STEP-DOWN SWIFT CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • • • Wide Input Voltage Range: 5.5 V to 36 V Up to 3-A Continuous 4-A Peak Output Current

Contextual Info: Datasheet Dual Synchronous Buck Converter BD93291EFJ ●Description The BD93291EFJ is a dual synchronous buck converter. It integrates wide input voltage range 8.0V to 26V synchronous buck converter and low input voltage (Vout1 : 5.0V) synchronous buck converter.

MXF5050

Abstract: MXF3535 LC Filters MXF5050L low-pass filter inductor
Contextual Info: Multilayer Chip LC Filters MXF Series TDK multilayer chip LC filters have a completely monolithic structure in which dielectric materials and conductive materials are alternately layered to form capacitors. Then ferrite and conductive materials are alternately layered to form inductors or transformers. These different materials are