10M80
Abstract: 10MA80 10M60 10M40 10M15 10EF2 1s785 10V-200 10ELS2 10ELS4
Contextual Info: - 38- A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6
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10ef2200ns10els1150ns+1010els210els410els610m8010ma8010m6010m4010m151s78510v-200
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10M15
Abstract: 10EF2 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B 10KF20 10KF20B
Contextual Info: - 38 - A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6
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10ef2200ns10els1150ns+810els210els410els610m1510kf1010kf10b10kf2010kf20b
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10M15
Abstract: 10EF2 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B 10KF20 10KF20B
Contextual Info: - 38 - A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6
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10ef2200ns10els1150ns+810els210els410els610m1510kf1010kf10b10kf2010kf20b
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10M80
Abstract: 10M15 10ELS4 10EF2 10ELS1 10ELS2 10ELS6 10KF10 10KF10B 10KF20
Contextual Info: - 38- A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6
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10ef2200ns10els1150ns+810els210els410els610m8010m1510kf1010kf10b10kf20
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10EF2
Abstract: 10M15 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B 10KF20 10KF20B
Contextual Info: - 38 - A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6
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10ef2200ns10els1150ns+810els210els410els610m1510kf1010kf10b10kf2010kf20b
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Contextual Info: 10EF1 10EF2 l.lA /1 0 0 ~ 2 0 0 V /tr r : 200nsec FAST RECOVERY DIODE FEATURES ° Miniature Size 2.7 .106 MAX DIA * Super Fast Recovery o Low Forward Voltage Drop 0.7(.027) DIA 0.5(.020) o Low Power Loss, High Efficiency 2 7 ( 1 .0 6 ) MIN ° High Surge Capability
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10ef110ef2200nsec7c027+2bbl51e30q02141
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10EF1
Abstract: S 437 Diode 10EF2
Contextual Info: FAST RECOVERY DIODE 1.1A /100— 2 0 0 V /trr : 200nsec 10EF1 10EF2 FEATURES ° Miniature Size ° Super Fast Recovery ° Low Forward Voltage Drop 0 Low Power Loss, High Efficiency ° High Surge Capability ° 2 6mm and 52mm Inside Tape Spacing Package Available
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10M15
Abstract: 10MA80 10ELS4 10EF2 10MA120 10M10 10ELS1 10ELS2 11DF2 10KF10
Contextual Info: - 38A ffi 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6 ÌQKFIO ÍOKFIOB 10KF20 10KF20B 10KF30 10KF30B 10KF40 10KF40B ÍOMIO 10M15 10M20 10M30 10M40 10M50 10M60 10M80 ÎOMIOO 10MA10 10MA20 10MA30 10MA40 10MA60 ÎOMASO ÎOMAIOO 10MA120 10MA140 10MA160 10U4 1ÛU8 1 OU12
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10ef2200ns10els1150ns+910els210els410els610m1510ma8010ma12010m1011df210kf10
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10M15
Abstract: 10EF2 1S783 10MA80 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B
Contextual Info: - 38 - A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6
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10ef2200ns10els1150ns+810els210els410els610m151s78310ma8010kf1010kf10b
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10EF1
Abstract: 10EF2
Contextual Info: FAST RECOVERY DIODE l.lA /10 0~ 20 0V /trr : 200nsec 10EF1 10EF2 FEATURES ° Miniature Size 2.7 .106 nlA M A X U1A « Super Fast Recovery o Low Forward Voltage Drop 0.7(.027)DIA 0.5(.020) •>Low Power Loss, High Efficiency 2 7 ( 1.0 6 ) ' M IN ° High Surge Capability
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30D106
Contextual Info: Type30D +105C General Purpose Miniature Axial Lead, Aluminum Capacitors Features — +105°C, Long Life, High Performance High CV Per Case Size Case Sizes to 18mm Diameters General Specifications — Operating Temperature: -40°C - +105°C. Voltage Range: 3 - 250VDC.
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PC133 registered reference design
Abstract: micron dram code 10EB2
Contextual Info: PRELIMINARY‡ 256MB, 512MB x72 184 Pin REGISTERED DDR SDRAM DIMMs DDR SDRAM DIMM MT18VDDT3272G, MT18VDDT6472G For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES • • • • • • • • • • •
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256mb512mb184-pinmt16vr25616ag+5mt16vr25618agmt16vr25618ag-840a1pc133 registered reference designmicron dram code10eb2
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PC133 registered reference design
Abstract: 10EB2
Contextual Info: 4, 8, 16 MEG x 64 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT4LSDT464A, MT4LSDT864A MT4LSDT1664A For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-*, PC100- and PC133-compliant
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pc66-pc100-pc133-compliant168-pin+8128mb096-cyclemt16vr25616ag512mbmt16vr25618agmt16vr25618ag-840a1pc133 registered reference design10eb2
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DS1849
Abstract: 0118-B PC133 registered reference design 662C MT8LSDT 10EF1
Contextual Info: ADVANCE 16, 32 MEG x 72 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT9LSDT1672A, MT18LSDT3272A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC133- and PC100-compliant
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pc133-pc100-compliant168-pin128mb+11256mb096-cyclemt8vr12818ag512mbmt16vr25616agds18490118-bpc133 registered reference design662cmt8lsdt10ef1
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10DBAG5
Abstract: kfs4300 FN322-1 LGA1A-2 03GENG3E-R FN363 03EB3 FN670 LGA1A-10 FN323-6-05
Contextual Info: EMI FILTER PRODUCTS C r os s R efer enc e G ui de Qualtek Part Number 858-01/081 858-01/003 858-03/007 858-01/003 858-01/003 858-03/007 857-01/046 860-02/001 854-02/001 854-02/002 854-02/001 854-02/002 851-03/003 851-03/003 854-02/001 854-02/002 853-02/001
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kfs4300kfx4300iso-900110dbag5+8fn322-1lga1a-203geng3e-rfn36303eb3fn670lga1a-10fn323-6-05
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0118-B
Abstract: 0118B MT8LSDT3264HG PC133 registered reference design MT8LSDT MARKING CL3 10EF1 simm 256mb
Contextual Info: ADVANCE 16, 32 MEG x 64 SDRAM DIMMs MT8LSDT1664A, MT16LSDT3264A SYNCHRONOUS DRAM MODULE For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View • PC133- and PC100-compliant
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pc133-pc100-compliant168-pin128mb+14256mb096-cyclemt8lsdt1664amt8vr12818ag512mbmt16vr25616ag0118-b0118bmt8lsdt3264hgpc133 registered reference designmt8lsdtmarking cl310ef1simm 256mb
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30KF60B
Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
Contextual Info: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166
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1n40011n40021n40041n4005+161n40061n40072vf10ctf20ctf30ctf40ct30kf60b10ef1nsf03a20c25p10qf10p10qc25p40fksf25a120bc10p10q61mq60c16p40f
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motorola diode cross reference
Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3
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1n58171n58181m5819mbr150+14mbr160mbr190mbr110011dq0311dq04motorola diode cross referencereplacement uf5402ir 30d1diode ir 30d110df2 "cross reference1n4007 "direct replacementdiode ru4air 10d41n5818 "direct replacement
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PC133 registered reference design
Contextual Info: 4, 8, 16 MEG x 72 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT5LSDT472A, MT5LSDT872A, MT5LSDT1672A For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-*, PC100- and PC133-compliant
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pc66-pc100-pc133-compliant168-pin+6128mb096-cyclemt8vr12818ag512mbmt16vr25616agpc133 registered reference design
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PC133 registered reference design
Abstract: 16 MB Micron EDO SIMM Module mt1l DS1849 10EF1 10EB2
Contextual Info: PRELIMINARY 512MB / 1GB x72, ECC 168-PIN REGISTERED FBGA SDRAM DIMM SYNCHRONOUS DRAM MODULE MT36LSDF6472G - 512MB MT36LSDF12872G - 1GB For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES PIN ASSIGNMENT (Front View)
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512mb168-pinpc100pc133+8mt8vr12818agmt16vr25616agpc133 registered reference design16 mb micron edo simm modulemt1lds184910ef110eb2
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0118-B
Abstract: MT8LSDT3264HG PC133 registered reference design 1700B DDR DIMM pinout micron
Contextual Info: ADVANCE 8, 16 MEG x 72 REGISTERED SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT9LSDT872, MT9LSDT1672 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT FRONT VIEW 168-PIN DIMM
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168-pinpc133-pc100-compliant128mb+10mt8vr12818ag512mbmt16vr25616agmt16vr25618agmt16vr25618ag-840a10118-bmt8lsdt3264hgpc133 registered reference design1700bddr dimm pinout micron
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10EF2
Abstract: 10EF1
Contextual Info: FAST RECOVERY DIODE l .lA / 1 0 0 ~ 2 0 0 V / t r r : 200nsec 1 0 E F 1 10 EF2 FEATURES ° Miniature Size ° Super Fast Recovery ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability » 26mm and 52mm Inside Tape Spacing Package Available
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EQUIVALENT BYD33D
Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and
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pbyr3045wtbyd73dctb34mbyd73g+14sb1035pbyr10401n5059sb1040equivalent byd33d1n5062 equivalentsuf5402diode cross reference bys21-45bys21-451n4007 general instrumentsby255 ittda3/10001n6644fr207 equivalent
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PC133 registered reference design
Abstract: MT9V
Contextual Info: ADVANCE 32, 64 MEG x 72 REGISTERED SDRAM DIMM SYNCHRONOUS DRAM MODULE MT18LSDT3272DG, MT18LSDT6472DG For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES PIN ASSIGNMENT FRONT VIEW 168-PIN DIMM
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168-pinpc133-pc100-compliant256mb+6512mb64m18mt8vr12818agmt16vr25616agpc133 registered reference designmt9v
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