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    MBRS130LT3 Search Results

    MBRS130LT3 Datasheets (13)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MBRS130LT3
    EIC Semiconductor Schottky Barrier Rectifiers Original PDF 41.63KB 2
    MBRS130LT3
    Motorola Silicon Diode Original PDF 65.17KB 4
    MBRS130LT3
    On Semiconductor Schottky Power Rectifier Original PDF 36.02KB 4
    MBRS130LT3
    On Semiconductor 1A 30V Low Vf Schottky Rectifier; Package: SMB; No of Pins: 2; Container: Tape and Reel; Qty per Container: 2500 Original PDF 127.11KB 6
    MBRS130LT3
    ON Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 2A SMB Original PDF 5
    MBRS130LT3
    On Semiconductor MBRS130 - DIODE 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AA, PLASTIC, CASE 403A-03, SMB, 2 PIN, Rectifier Diode Original PDF 65.96KB 3
    MBRS130LT3/D
    On Semiconductor 1.0 AMPERE 30 VOLTS Original PDF 61.15KB 4
    MBRS130LT3/D
    On Semiconductor 1.0 AMPERE 30 VOLTS Original PDF 68.56KB 4
    MBRS130LT3-D
    On Semiconductor Schottky Power Rectifier Surface Mount Power Packa Original PDF 36.02KB 4
    MBRS130LT3G
    On Semiconductor 1A 30V Low Vf Schottky Rectifier Original PDF 36.02KB 4
    MBRS130LT3G
    On Semiconductor 1A 30V Low Vf Schottky Rectifier; Package: SMB; No of Pins: 2; Container: Tape and Reel; Qty per Container: 2500 Original PDF 127.11KB 6
    MBRS130LT3G
    ON Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 2A SMB Original PDF 5
    MBRS130LT3G
    On Semiconductor MBRS130 - DIODE 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AA, LEAD FREE, PLASTIC, CASE 403A-03, SMB, 2 PIN, Rectifier Diode Original PDF 65.96KB 3
    SF Impression Pixel

    MBRS130LT3 Price and Stock

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    onsemi MBRS130LT3G

    Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
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    TME MBRS130LT3G 3,586 1
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    Verical () MBRS130LT3G 85,000 2,500
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    MBRS130LT3G 75,000 2,500
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    MBRS130LT3G 11,878 98
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    MBRS130LT3G 2,500 112
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    Avnet Americas () MBRS130LT3G Ammo Pack 1
    • 1 $0.54
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    MBRS130LT3G Tape & Reel 17,500
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    MBRS130LT3G Tape & Reel 23 Weeks 12,500
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    MBRS130LT3G Tape & Reel 23 Weeks 2,500
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    Mouser Electronics MBRS130LT3G 83,851
    • 1 $0.51
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    Arrow Electronics () MBRS130LT3G 85,000 23 Weeks 2,500
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    MBRS130LT3G Cut Strips 11,878 23 Weeks 1
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    MBRS130LT3G 2,500 48 Weeks 1
    • 1 $0.49
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    Newark () MBRS130LT3G Tape & Reel 43,986 10
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    MBRS130LT3G Cut Tape 43,986 1
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    MBRS130LT3G Tape & Reel 2,500
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    MBRS130LT3G Cut Tape 5
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    MBRS130LT3G Tape & Reel 100
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    MBRS130LT3G Tape & Reel 7,500
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    RS MBRS130LT3G Bulk 100
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    Onlinecomponents.com MBRS130LT3G 75,000
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    Bristol Electronics () MBRS130LT3G 13,637 1
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    MBRS130LT3G 3,035
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    ComSIT USA MBRS130LT3G 4,303
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    NexGen Digital MBRS130LT3G 1,001
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    Chip 1 Exchange () MBRS130LT3G 13,395
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    MBRS130LT3G 1,790
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    Avnet Asia MBRS130LT3G 23 Weeks 12,500
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    Avnet Silica MBRS130LT3G 12,500 14 Weeks 2,500
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    Component Electronics, Inc MBRS130LT3G 100
    • 1 $0.38
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    • 100 $0.29
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    EBV Elektronik MBRS130LT3G 705,000 15 Weeks 2,500
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    Flip Electronics MBRS130LT3G 2,500
    • 1 $0.03
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    Master Electronics MBRS130LT3G 75,000
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    Win Source Electronics MBRS130LT3G 123,350
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    onsemi MBRS130LT3

    1.0 A, 30 V, Schottky Power Rectifier, Surface Mount - Tape and Reel (Alt: MBRS130LT3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MBRS130LT3 Tape & Reel 31 Weeks 2,500
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    Quest Components () MBRS130LT3 12,000
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    MBRS130LT3 11,690
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    MBRS130LT3 5,407
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    MBRS130LT3 1,896
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    MBRS130LT3 1,356
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    MBRS130LT3 645
    • 1 $0.14
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    Component Electronics, Inc MBRS130LT3 11,627
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    Win Source Electronics MBRS130LT3 141,540
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    onsemi MBRS130LT3G.

    RECT SCHOTTKY, 30V, 2A, SINGLE;
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MBRS130LT3G. Tape & Reel 2,500
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    Others MBRS130LT3

    Diode Schottky 30V 2A 2-Pin SMB
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    Bristol Electronics MBRS130LT3 151,262
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    Motorola Semiconductor Products MBRS130LT3

    Diode Schottky 30V 2A 2-Pin SMB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MBRS130LT3 50,575 1
    • 1 $0.30
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    Quest Components () MBRS130LT3 27,773
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    MBRS130LT3 8,044
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    MBRS130LT3 6,781
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    MBRS130LT3 6,491
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    MBRS130LT3 6,277
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    MBRS130LT3 5,360
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    MBRS130LT3 4,015
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    MBRS130LT3 5
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    ComSIT USA MBRS130LT3 11,745
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    NexGen Digital MBRS130LT3 2,000
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    Chip 1 Exchange MBRS130LT3 535
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    Component Electronics, Inc MBRS130LT3 4,311
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    MBRS130LT3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    403A-03

    Abstract: MBRS130LT3 CASE 403A MBRS130LT3 marking
    Contextual Info: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package Motorola Preferred Device . . . Employs the Schottky Barrier principle in a large area metal–to–silicon


    Original
    mbrs130lt3/dmbrs130lt3403a-03case 403a+1mbrs130lt3 marking PDF

    diode 1bl3

    Abstract: 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3
    Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    mbrs130lt3diode 1bl31bl3marking code 1bl3+21bl3 marking code150 1bl3 PDF

    1bl3

    Abstract: diode 1bl3 MBRS130LT3 on 1bl3 MBRS130LT3G Micro-D
    Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    mbrs130lt3mbrs130lt3/d1bl3diode 1bl3+3on 1bl3mbrs130lt3gmicro-d PDF

    Contextual Info: MBRS130LT3 SCHOTTKY BARRIER RECTIFIER Schottky Power Rectifier Surface Mount Power Package SMB DO-214AA 1.1 ± 0 .3 4 .8 ± 0 .1 5 5 .4 ± 0 .1 5 Employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry


    Original
    mbrs130lt3do-214aa PDF

    1BL3 marking code

    Abstract: MBRS130LT3G SBRS8130LT3G 1bl3 diode MBRS130LT 1BL3
    Contextual Info: MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    mbrs130lt3gsbrs8130lt3gmbrs130lt3/d1bl3 marking code+31bl3 diodembrs130lt1bl3 PDF

    403A-03

    Abstract: MBRS130LT3 MBRS1100T3
    Contextual Info: SMB Devices Maximum die size 64 mil x 64 mil CASE 403A-03 Rectifiers — Schottky Device MBRS130LT3 MBRS140T3 MBRS1100T3 V rrm Volts k> Amps •fsm Amps Vf @25°C Volts lR @ 25°C mA 30 40 100 1 1 1 40 40 40 0.395 0.600 0.750 1.000 1.000 0.500 V rrm Volts


    OCR Scan
    03a-03mbrs130lt3mbrs140t3mbrs1100t3+3murs120t3murs160t3403a-03 PDF

    BRS130LT3

    Contextual Info: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MBRS130LT3 S ch o ttky Pow er R e ctifier Surface Mount Power Package Motorola Preferred Device . . . Employs the Schottky Barrier principle in a large area metal-to-silicon


    OCR Scan
    mbrs130lt3/dbrs130lt3 PDF

    MBRS340T3G

    Abstract: MBRS360T3G SS34 sma SS14 SOD123 MBRS140T3G SS34 SMB ss24 SMA MBRM140T1G MBRS260T3G SS34 smc
    Contextual Info: ONSEMI Part # MBR0520LT1G MBR0530T1G MBR0540T1G MBR120ESFT1G MBR130T1G MBRA130LT3G MBRA140T3G MBRA340T3G MBRD340T4G MBRD360T4G MBRD835LT4G MBRM130LT1G MBRM140T1G MBRM140T3G MBRS1100T3G MBRS130LT3G MBRS140T3G MBRS260T3G MBRS340T3G MBRS360T3G MBRS540T3G MUR120RLG


    Original
    mbr0520lt1gmbr0530t1gmbr0540t1gmbr120esft1g+16mbr130t1gmbra130lt3gmbra140t3gmbra340t3gmbrd340t4gmbrd360t4gmbrs340t3gmbrs360t3gss34 smass14 sod123mbrs140t3gss34 smbss24 smambrm140t1gmbrs260t3gss34 smc PDF

    1bl3 motorola

    Abstract: diode 1bl3 MBRS130LT3 1bl3 on 1bl3 MBRS130LT3 marking schottky power rectifier MOTOROLA motorola diode device data diode 1bl3 141
    Contextual Info: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package Motorola Preferred Device . . . Employs the Schottky Barrier principle in a large area metal–to–silicon


    Original
    mbrs130lt3/dmbrs130lt31bl3 motoroladiode 1bl3+61bl3on 1bl3mbrs130lt3 markingschottky power rectifier motorolamotorola diode device datadiode 1bl3 141 PDF

    1bl3 motorola

    Abstract: diode 1bl3 1BL3 diode 1bl3 141 MBRS130LT3 MBRS130LT3 marking 403A-03 1BL3 141 schottky power rectifier MOTOROLA
    Contextual Info: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Schottky Power Rectifier MBRS130LT3 Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with


    Original
    mbrs130lt3/dmbrs130lt31bl3 motoroladiode 1bl3+61bl3diode 1bl3 141mbrs130lt3 marking403a-031bl3 141schottky power rectifier motorola PDF

    diode 1bl3

    Abstract: MBRS130LT3
    Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    mbrs130lt3mbrs130lt3/ddiode 1bl3 PDF

    MBRS130LT3

    Abstract: 403A-03
    Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    mbrs130lt3mbrs130lt3/d403a-03 PDF

    403A-03

    Abstract: diode 1bl3 1BL3 1bl3 motorola
    Contextual Info: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA S ch o ttky Pow er R e ctifier MBRS130LT3 Surface Mount Power Package . . . Employs the S chottky Barrier principle in a large area m e ta l-to -s ilic o n power diode. S ta te -o f-th e -a rt geom etry features epitaxial construction with


    OCR Scan
    mbrs130lt3/d03a-03403a-03diode 1bl3+21bl31bl3 motorola PDF

    1bl3

    Abstract: diode 1bl3 on 1bl3 MBRS130LT3 1BL3 marking code MBRS130LT3G MBRS130LT3G ON SEMICONDUCTOR
    Contextual Info: MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    mbrs130lt3mbrs130lt3/d1bl3diode 1bl3+4on 1bl31bl3 marking codembrs130lt3gmbrs130lt3g on semiconductor PDF

    motorola diode cross reference

    Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
    Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3


    OCR Scan
    1n58171n58181m5819mbr150+14mbr160mbr190mbr110011dq0311dq04motorola diode cross referencereplacement uf5402ir 30d1diode ir 30d110df2 "cross reference1n4007 "direct replacementdiode ru4air 10d41n5818 "direct replacement PDF

    MBRS130

    Abstract: MBRS130LT3
    Contextual Info: MBRS130LT3 SCHOTTKY BARRIER RECTIFIER Schottky Power Rectifier Surface Mount Power Package SMB DO-214AA 1.1 ± 0 .3 4 .8 ± 0 .1 5 5 .4 ± 0 .1 5 Employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry


    Original
    mbrs130lt3do-214aambrs130 PDF

    diode 1bl3

    Abstract: 1bl3 MBRS130LT3 5M MARKING CODE SCHOTTKY DIODE marking code 1BL3 schottky diode SMB marking code 120 AS 031 1BL3 544 MBRS130LT3G on 1bl3
    Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    mbrs130lt3diode 1bl31bl35m marking code schottky diode+6marking code 1bl3schottky diode smb marking code 120as 0311bl3 544mbrs130lt3gon 1bl3 PDF

    diode 1bl3

    Abstract: MBRS130LT3
    Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    mbrs130lt3mbrs130lt3/ddiode 1bl3 PDF

    RW marking

    Abstract: CASE 403A
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Schottky Power R ectifier Surface Mount Power Package MBRS130LT3 M otorola Preferred Device . . . Employs the Schottky Barrier principle in a large area m e ta l-to -s ilic o n power diode. S ta te -o f-th e -a rt geometry features epitaxial construction with oxide passivation


    OCR Scan
    mbrs130lt3rw markingcase 403a PDF

    MBRS130LT3

    Abstract: 0220ca
    Contextual Info: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package Motorola Preferred Device . . . E m p loys the Schottky Barrier principle in a large area m etal-to-silicon


    OCR Scan
    mbrs130lt3/dmbrs130lt30220ca PDF

    diode 1bl3

    Abstract: 1bl3 1BL3 marking code MBRS130LT3 diode+1bl3 on 1bl3
    Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    mbrs130lt3diode 1bl31bl31bl3 marking code+2diode+1bl3on 1bl3 PDF

    diode 1bl3

    Abstract: 1bl3 on 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3 MBRS130LT3 marking CASE 403A
    Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    mbrs130lt3r14525mbrs130lt3/ddiode 1bl3+71bl3on 1bl3marking code 1bl31bl3 marking code150 1bl3mbrs130lt3 markingcase 403a PDF

    surface mount diode 3F

    Abstract: 403A-03 MBRS130LT3
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Schottky Power Rectifier Surface Mount Power Package MBRS130LT3 Motorola Preferred Device . . . Employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation


    OCR Scan
    mbrs130lt3vs290surface mount diode 3f403a-03 PDF

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original
    sg379/d1n965brlzen15v1n751as+151n967brlzen18v1n751asrl1n968brlzen20vmc68b21cpxcm916x1cth16transistor marking code 12w sot-23sg379mc68b54pxc68hc805p18cdwmc68b50cpmc2830ne555nchn ne555n PDF