MBR160 Search Results

Contextual Info: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high

DO-204AL

Abstract: MBR150 MBR160
Contextual Info: MBR150, MBR160 Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

Contextual Info: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high

MBR150

Contextual Info: Bulletin PD-20589 rev. C 12/04 MBR150 MBR160 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/ Features The MBR150, MBR160 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching

Contextual Info: BL GALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER MBR150- - -MBR160 VOLTAGE RANGE: 60 V CURRENT: 1.0 A FEATURES DO - 41 Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free

B150

Abstract: B160 MBR150 MBR160
Contextual Info: MOTOROLA Order this document by MBR150/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifiers MBR150 MBR160 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with

Contextual Info: MBR160HW SANGDEST MICROELECTRONICS SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0933, Rev. A Green Products MBR160HW SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: • • • • • • • • • Low Turn-on Voltage Fast Switching PN Junction Guard Ring Transient and ESD Protection

1117T

Contextual Info: MOTOROLA Order this document by MBR150/D SEM ICONDUCTOR TECHNICAL DATA A x ia l Lead R ectifiers MBR150 MBR160 . . . em ploying the Schottky Barrier principle in a large area m etal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with

Contextual Info: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal

Contextual Info: DIGITRON SEMICONDUCTORS MBR150-MBR160 1A SCHOTTKY RECTIFIER MAXIMUM RATINGS Rating Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified forward current 1 (VR(equiv) ≤ 0.2VR(dc), RӨJA = 80°C/W, PC board mounting, TA = 55°C)

DO-204AL

Abstract: MBR150 MBR160
Contextual Info: MBR150, MBR160 Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

Contextual Info: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal

Contextual Info: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high

TE 2395 motorola

Abstract: MBR16050CT motorola te 2395 mbr16050 te 2395 TRANSISTOR MBR16045CT MBR1603
Contextual Info: M O T O R O L A SC D IO DES /OP TO Order this data sheet by MBR16035CT/D t 3 t 7 2 S S 00fll2ûE G 5SE D MOTOROLA T-Q3 - I3 _ SEMICONDUCTOR TECHNICAL DATA M BR16035CT M BR16045CT M BR16050CT Sw itchm ode Power Rectifiers Dual Schottky Power Rectifiers

MBR150

Abstract: DO-204AL MBR160
Contextual Info: Bulletin PD-20589 rev. B 03/03 MBR150 MBR160 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/ Features Characteristics MBR150 MBR160 Units IF AV Rectangular 1.0 A 50/60 V Low profile, axial leaded outline IFSM @ tp = 5 µs sine 150

B150

Abstract: B160 MBR150 MBR150RL MBR160 MBR160RL
Contextual Info: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap

B150

Abstract: B160 MBR150 MBR150RL MBR160 MBR160RL
Contextual Info: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap

MBR150

Abstract: MBR160
Contextual Info: MBR150 ~ MBR160 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 50 - 60 Volts IO : 1.0 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop Pb / RoHS Free

Contextual Info: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high

Contextual Info: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap

B150

Abstract: B160 MBR150 MBR160
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR150 MBR160 A x ia l Lead R e ctifie rs . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

Contextual Info: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

Contextual Info: MBR150/MBR160 Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline Cathode Anode • Very low forward voltage drop RoHS • High frequency operation COMPLIANT • High purity, high temperature epoxy encapsulation for