MBRS130T3 Search Results

marking B13 diode SCHOTTKY

Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay

403A-03

Abstract: MBRS130T3 MBRS130T3G
Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

MBRS130T3

Abstract: 403A-03 MBRS130T3G
Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

marking B13 diode SCHOTTKY

Abstract: diode marking b13 Marking B13 MBRS130T3 schottky B13
Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

"MARKING B13"

Abstract: DIODE Marking B13 b13 smb MBRS130T3 Marking B13
Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRS130T3G, NRVBS130T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

MBRS120T3

Abstract: MBRS14ot3 5817SMJ 5818SMJ 5819SMJ MBRS130T3 MBRS130TR MBRS140T3 SK12 SK13
Contextual Info: 1 Amp Schottky Rectifiers 5817SMJ - 5819SMJ CATHODE BAND Dim. Inches Minimum A B C D E F G H J l-B -l Microsemi Catalog Number 5817SMJ SK12 MBRS120T3 SK13 MBRS130T3 MBRS130TR SK14 MBRS140T3 5818SMJ 5819SMJ -.035 .065 .205 .160 .130 .116 .089 .008 .020

403A-03

Abstract: MBRS130T3
Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

LT1109A

Abstract: LT1109A-12 LT1332 MBRS130T3 CD105-101K
Contextual Info: LT1332 Wide Supply Range Low Power RS232 Transceiver with 12V VPP Output for Flash Memory U DESCRIPTIO FEATURES Generates Full RS232 Signal Levels from 3V Supply 12V VPP Output Available for Flash Memory Useful with a Wide Variety of Switching Regulators Low Supply Current: I VCC = 1mA

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

step up DC DC 5v converter out 12V

Abstract: LTC1628CG IRF7807 LTC1624 LTC1625 LTC1628 LTC1702 LTC1703 LTC1735 LTC1736
Contextual Info: Design Solutions 8 June 1999 2-Step Power Conversion: Portable Power for the Future As microprocessor operating voltages continue to decrease, power conversion for CPU core power is becoming a daunting challenge. A core power supply must have fast transient response, good efficiency, and

Contextual Info: u n m t i i q 9 a TECHNOLOGY Micropower DC/DC Converter Flash Memory VPP Generator Adjustable and Fixed 5V, 12V KRTURCS D€SCRIPTIOn • Uses Off-the-Shelf Inductors ■ Low Cost ■ 8-Pin DIP or SO Package

IRF9530 mosfet pin details

Abstract: C2213 ADP1110 ADP1111 48 volt 25 amp smps circuit diagram CD75-150 CD54-22 adp1111-5 CD75-330K
Contextual Info: a Micropower, Step-Up/Step-Down SW Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V ADP1111 FEATURES Operates from 2 V to 30 V Input Voltage Range 72 kHz Frequency Operation Utilizes Surface Mount Inductors Very Few External Components Required Operates in Step-Up/Step-Down or Inverting Mode

c2992

Abstract: ADP1108 500uH POWER INDUCTOR with current rating 100mh inductor 100mh inductor data sheet ADP1108AN ADP1108AR
Contextual Info: a Micropower DC-DC Converter Adjustable and Fixed 3.3 V, 5 V, 12 V ADP1108 FEATURES Operates at Supply Voltages From 2.0 V to 30 V Consumes Only 110 ␮A Supply Current Step-Up or Step-Down Mode Operation Minimum External Components Required Low Battery Detector Comparator On-Chip

Tripath Amplifier

Abstract: TRIPATH TA2020 TA2020-020 TA2020 TA2020020 TRIPATH TECHNOLOGY TRIPATH tripath audio amp circuit MBRS130T3 ta2020 overload
Contextual Info: TECHNICAL INFORMATION Stereo 20W 4Ω Class-T Digital Audio Amplifier using Digital Power Processing TM Technology TA2020-020 June 1999 - Preliminary General Description The TA2020-020 is a two-channel Class-T (TripathTM) Digital Audio Power Amplifier IC using Tripath’s

BAV99LT1

Abstract: MBRS130T3 MC33153 MHPM7A10S120DC3 PHPM7A10S120DC3 3 phase induction motor
Contextual Info: MOTOROLA Order this document by MHPM7A10S120DC3/D SEMICONDUCTOR TECHNICAL DATA Product Preview MHPM7A10S120DC3 Hybrid Power Module Integrated Power Stage for 2.0 hp 460 VAC Motor Drive Motorola Preferred Device This module integrates a 3–phase inverter, 3–phase rectifier,

Design and Fabrication of 5V Constant Voltage Power supply

Abstract: LTC1628 IRF7807 LTC1624 LTC1625 LTC1628CG LTC1702 LTC1703 LTC1735 LTC1736
Contextual Info: Design Solutions 8 April 1999 2-Step Power Conversion: Portable Power for the Future As microprocessor operating voltages continue to decrease, power conversion for CPU core power is becoming a daunting challenge. A core power supply must have fast transient response, good efficiency, and

GA10-682K

Abstract: GA20-103K ADP1073 ADP1173 ADP1173AN ADP1173AR VN2222L 250uh 24V 5A SMPS circuit diagram
Contextual Info: Micropower DC-DC Converter ADP1173 a FEATURES Operates From 2.0 V to 30 V Input Voltages Only 110 ␮A Supply Current Typical Step-Up or Step-Down Mode Operation Very Few External Components Required Low Battery Detector On-Chip User-Adjustable Current Limit

BAV99LT1

Abstract: MBRS130T3 MC33153 MHPM7A25S120DC3 VF 3 phase converter IGBT General Purpose Fast Rectifier T/IRF 4648 hp
Contextual Info: MOTOROLA Order this document by MHPM7A25S120DC3/D SEMICONDUCTOR TECHNICAL DATA Product Preview MHPM7A25S120DC3 Hybrid Power Module Integrated Power Stage for 5.0 hp 460 VAC Motor Drive Motorola Preferred Device This module integrates a 3–phase inverter, 3–phase rectifier,

TRIPATH TA2024

Abstract: TA2024 TRIPATH TECHNOLOGY TRIPATH FBM2125 TA2024 application note 12v 4 channel AUDIO power AMPLIFIER CLASS-T DIGITAL AUDIO AMPLIFIER 2X15W 180uf 200 v capacitor
Contextual Info: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on EB-TA2024 2x15W Class-T Digital Audio Amplifier Evaluation Board using Digital Power Processing T M Technology Technical Information Revision B- April 2002 GENERAL DESCRIPTION The EB-TA2024 evaluation board is based on the TA2024, digital audio power