MBR190 Search Results

Contextual Info: Bulletin PD-20592 rev. C 05/02 MBRS190TR MBRS1100TR SCHOTTKY RECTIFIER 1 Amp SMB Description/Features Major Ratings and Characteristics MBR190TR MBR1100TR Units Characteristics IF AV Rectangular waveform 1.0 A 90 - 100 V IFSM @ tp = 5 µs sine 870 A VF @ 1.0 Apk, TJ=125°C

IR19-IR10

Abstract: marking code IR10 diode MBR190 AN-994 IR10 MBR1100TR MBRS1100TR MBRS190TR IR10 marking code
Contextual Info: Bulletin PD-20592 rev. B 02/02 MBRS190TR MBRS1100TR SCHOTTKY RECTIFIER 1 Amp SMB Description/Features Major Ratings and Characteristics MBR190TR MBR1100TR Units Characteristics IF AV Rectangular waveform VRRM 1.0 A 90 - 100 V IFSM @ tp = 5 µs sine 870 A

IR19-IR10

Abstract: ir10 diode MBR1100TR AN-994 IR10 MBRS1100TR MBRS190TR
Contextual Info: Bulletin PD-20592 rev. C 05/02 MBRS190TR MBRS1100TR SCHOTTKY RECTIFIER 1 Amp SMB Description/Features Major Ratings and Characteristics MBR190TR MBR1100TR Units Characteristics IF AV Rectangular waveform 1.0 A 90 - 100 V IFSM @ tp = 5 µs sine 870 A VF @ 1.0 Apk, TJ=125°C

IR19-IR10

Abstract: marking code IR10 diode ir10 diode IR10 marking code PD-20592 IR10 MBR1100TR MBRS1100TR MBRS190TR
Contextual Info: Bulletin PD-20592 rev. E 07/04 MBRS190TR MBRS1100TR SCHOTTKY RECTIFIER 1 Amp IF AV = 1 Amp VR = 90-100V Description/ Features Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform MBR190TR MBR1100TR Units 1.0 A 90 - 100 V IFSM @ tp = 5 µs sine

AN-994

Abstract: MBR1100TR MBRS1100TR MBRS190TR
Contextual Info: Bulletin PD-20592 04/01 MBRS190TR MBRS1100TR 1 Amp SCHOTTKY RECTIFIER SMB Description/Features Major Ratings and Characteristics Characteristics MBR190TR MBR1100TR Units IF AV Rectangular waveform 1.0 A VRRM 100 V IFSM @ tp = 5 µs sine 870 A VF @ 1.0 Apk, TJ=125°C

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

Contextual Info: Bulletin PD-20592 rev. D 03/03 MBRS190TR MBRS1100TR SCHOTTKY RECTIFIER 1 Amp SMB Description/ Features Major Ratings and Characteristics MBR190TR MBR1100TR Units Characteristics IF AV Rectangular waveform The MBRS190TR, MBRS1100TR surface-mount Schottky rectifier has been designed for applications requiring low

IR19-IR10

Abstract: AN-994 IR10 MBR1100TR MBRS1100TR MBRS190TR
Contextual Info: Bulletin PD-20592 rev. A 05/01 MBRS190TR MBRS1100TR SCHOTTKY RECTIFIER 1 Amp SMB Description/Features Major Ratings and Characteristics MBR190TR MBR1100TR Units Characteristics IF AV Rectangular waveform VRRM 1.0 A 90 - 100 V IFSM @ tp = 5 µs sine 870 A

MBR170

Abstract: BR-1100 BR190
Contextual Info: MOTOROLA Order this document by MBR170/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifiers MBR170 MBR180 MBR190 MBR1100 . . employing the Schottky Barrier principle in a large area m etal-to-silicon power diode. S tate-of-the-art geometry features epitaxial construction with oxide passiva­

1W ZENER DIODE 90V

Abstract: diode zener 18v 1w Zener Diode Table 1N4751B 2W ZENER DIODE 90V zener diode 1.6v IN4745B zener diode 1N47 MBR190 zener 15 1w
Contextual Info: For assistance or to order, call Revised 5/15/98 Application 800 531-5782 Notes PT3100/4100 Series Adding Undervoltage Lockouts to the PT3100/4100 Series Power Trends’ PT3100/4100 Series Isolated DC-DC Converters are designed to operate over an input voltage

ERICSSON 2111

Contextual Info: PKS 2000 I 15 W DC/DC Power Modules 24 V Input Series • SMD and Through-hole versions in 22 g metal case • High power density of 17 W/in3 • Very small footprint and low profile 36.8 x 41.7 ×9.7 mm 1.45×1.64 ×0.38 in • MTBF is 4 million hours at +40 °C

Contextual Info: PKS 4000 I 13 –15 W DC/DC Power Modules 48 V Input Series • SMD and Through-hole versions in 22 g metal case • High power density of 17 W/in3 • Very small footprint and low profile 36.8 x 41.7 ×9.7 mm 1.45×1.64 ×0.38 in • MTBF is 4 million hours at +40 °C

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

mbr190

Abstract: ci 7001 smd TL431
Contextual Info: PKS 2000 I 15 W DC/DC Power Modules 24 V Input Series • SMD and Through-hole versions in 22 g metal case • High power density of 17 W/in3 • Very small footprint and low profile 36.8 x 41.7 ×9.7 mm 1.45×1.64 ×0.38 in • MTBF is 4 million hours at +40 °C

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

IN4745

Abstract: 1W ZENER DIODE 90V ZENER diode TESTING CIRCUIT how to work 16v zener diode mbr190 diode zener 18v 1w 1W ZENER DIODE how to work 30v zener diode 1N4751B
Contextual Info: For assistance or to order, call Revised 5/15/98 Application 800 531-5782 Notes PT3100/4100 Series Adding Undervoltage Lockouts to the PT3100/4100 Series Power Trends’ PT3100/4100 Series Isolated DC-DC Converters are designed to operate over an input voltage

MBR140P

Abstract: 1N5819 SS14 1N5822 SS34 mbr370 MBR170 1N5822 ss24 motorola SB5100 CROSS REFERENCE LIST MBR30050CT MBR180
Contextual Info: Schottky Cross Reference List FAIRCHILD SEMI 1N5818 1N5819 1N5822 BAT54 BAT54A BAT54C BAT54S FMKA140 FMKA140 FYP1504DN FYP2004DN FYP2006DN MBR1035 MBR1045 MBR1535CT MBR1545CT MBR1635 MBR1645 MBR2035CT MBR2045CT MBR2060CT MBR2535CT MBR2545CT MBR3035PT MBR3045PT

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

Contextual Info: MBR140~MBR1200 SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts 1.0 Amperes CURRENT DO-41 Unit: inch mm FEATURES • Plastic package has Underwriters Laboratory .034(.86) 1.0(25.4)MIN. Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound.

MUR1560 equivalent

Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON