B2535 Search Results

b25355-j1205-k001

Abstract: B25650 B25355 B25355-L2326-K004 SIEMENS epcos CAPACITORS B25355-G6205-K001 IEC bolt locked torque B25355-J2405-K001 B25355-L1227-K004 b25355-j2504-k001
Contextual Info: Capacitors for Power Electronics Series/Type: B253* The following products presented in this data sheet are being withdrawn. Ordering Code Substitute Product B25355L8367K004 B25355L7477K004 B25355L6627K004 B25355L4887K004 B25355L2856K004 B25355L2805K001 B25355L2635K001

WS80a

Abstract: b25353 siemens SPC 4320 C3227* transistor b25353-k1118-k4 siemens matsushita kondensator B25834-K6106-K9 K4106 V245 datenbuch
Contextual Info: Inhaltsverzeichnis Anwendungen- und Bauformen-Übersicht Seite 5 9 Anwendungen Kondensator-Fragebogen 17 20 Allgemeine technische Angaben 23 Angaben zur Qualität 55 Gleichspannungs-Kondensatoren 63 Wechselspannungs-Kondensatoren 163 Kondensator-Befestigungen

B2535L diode

Abstract: b2535l B2535L 220 MBRB2535CTL MBRB2535CTLT4 SMD310
Contextual Info: B2535CTL Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and

b2535

Abstract: b2545 B2545 M b2535 diode
Contextual Info: MOTOROLA MBR2535CT MBR2545CT SEM ICONDUCTOR TECHNICAL DATA MBR2545CT is a Motorola Preferred Device Sw itchm ode Power R e ctifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:

B2535LG

Abstract: aka B2535LG B2535L B2535L diode B2535L AKA B2535L 220 SCHOTTKY BARRIER RECTIFIER aka MBR2535CTL MBR2535CTLG
Contextual Info: MBR2535CTL SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*

5SBA20

Abstract: ZENER b29 B2950 BRF20100C BZY97C11 BRF20100CT BC337 B2060CT BRF1060 General Semiconductor 1N4249
Contextual Info: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Sem iconductor's part num bers, along with the Data Book in w hich they appear. For Zener and T V S page references, see the Zener/TVS Device Index on page 5 in th is book.

RA53 thermistor

Abstract: thermistor ntc RA53 thermistor Ra53 thermistor ntc 8.2k Bowthorpe Thermistors B2545 RA53 RA54 20A NTC THERMISTORS NTC 20K thermistor
Contextual Info: 19h !5i- 111 BOWTHORPE THERMISTORS Q NTC Thermistors INDUSTRIAL/CONSUMER TELECOMMUNICATIONS/DP PROFESSIONAL RA TYPE Description Type RA are directly heated bead type thermistors primarily intended for ap­ plications where high sensitivity to electrical power input is required.

K4887-K4

Abstract: B25355-K167-K4 ws dvd 290
Contextual Info: MP DC Capacitors Smoothing, Supporting, Discharge B 25 355 High peak-current capability Wide capacitance and voltage range Construction • Self-healing • Paper dielectric • Oil and hard-wax impregnated tubular windings no PCB • Metal-sprayed face ends ensure reliable contacting

B2535L

Abstract: B2535L diode
Contextual Info: MBR2535CTL SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency

B2535L

Abstract: B2535L diode B2535 MBRB2535CTL SMD310
Contextual Info: MOTOROLA Order this document by B2535CTL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE Power Designer's Rectifier B2535CTL D2PAK Surface Mount Power Package Motorola Preferred Device The D2PAK Power Rectifier employs the Schottky Barrier principle in a large

b2535l

Abstract: B2535L diode MBR2535CTL
Contextual Info: MOTOROLA Order this document by MBR2535CTL/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier MBR2535CTL . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide

C3205 transistor

Abstract: C4106 C4106 transistor C3205 Transistor C3205 k3505 MP67B k2255 L0307 c4106 datasheet
Contextual Info: Contents Index of Types Application and Selector Guide 5 8 9 Applications Capacitor Questionnaire 17 20 General Technical Information 23 Thermal Design of Capacitors for Power Electronics 45 Quality Specifications 53 DC Capacitors for Power Electronics 61

Motorola b2545

Abstract: b2535 b2535 diode b2545 b2545 MOTOROLA 221A-06 MBR2535CT MBR2545CT
Contextual Info: MOTOROLA Order this document by MBR2535CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MBR2535CT MBR2545CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features:

B2535LG

Abstract: aka B2535LG PPAP MANUAL for automotive industry NRVBB2535CTLG MBRB2535CTLG
Contextual Info: B2535CTLG, B2535CTLG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal

B2545 AKA

Abstract: b2535 b2545 b2535 diode B2535 AKA b2535 on MBR2545CT MBR2535CT mbr2545 01 04 B2545 AKA
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

Contextual Info: MOTOROLA Order this document by MBR2535CTL/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide

Contextual Info: , _ Ä SEMICONDUCTOR TECHNICAL DATA 1 Or der this document by m b rb 2 5 3 s c tl/d Designer’s Data Sheet SWITCHMODE™ Pow er R e c tifie r B2535CTL D2PAK Surface Mount Power Package Motorola Preferred Device The D2pAK Power Rectifier employs the Schottky Barrier principle in a large

B2535G

Abstract: b2535 b2535l B2535L diode MBR2535CTL MBR2535CTLG SCHOTTKY BARRIER RECTIFIER aka
Contextual Info: MBR2535CTL SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*

B2535L

Abstract: MBR2535CTL MBR2535CTLG B2535L diode
Contextual Info: MBR2535CTL SWITCHMODEt Power Rectifier The MBR2535CTL employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency

b2535l

Abstract: B2535L diode B2535L 220
Contextual Info: B2535CTL Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and

B81133 X2 mkt

Abstract: B25355 B25650 CAPACITOR, 33000 MF, 63 VDC capacitor mkt 344 ultracapacitor b32612 B25655 CAPACITOR B81130 X2 MKP B25839
Contextual Info: Capacitors Folienkondensatoren Film Capacitors MKT MKT/MFT MKT/MKT-S B32572 B32573 B32231 B32232 Nennkapazität Rated capacitance CR Merkmale Features B32582 B32584 B32227 B32237 B32537 B32538 SilverCaps ohne Umhüllung Plastic case (UL 94 V-0) SilverCaps

b2535

Abstract: b2545 b2535 diode U4T DIODE Motorola b2545 2535c B2545 M BR2545CT
Contextual Info: MOTOROLA Order this document by MBR2535CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Pow er R ectifiers MBR2535CT MBR2545CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:

b2535l

Abstract: B2535
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifier . . . employing the Schottky Barrier principle in a large m e ta i-to -s ilic o n power diode. S ta te -o f-th e -a rt geom etry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage,

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection