MBR2535CTL Search Results

Contextual Info: DIGITRON SEMICONDUCTORS MBR2535CTL 25A SCHOTTKY RECTIFIER MAXIMUM RATINGS Symbol MBR2535CTL Unit Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage Rating VRRM VRWM VR 35 30 30 V Average rectified forward current Rated VR IF(AV)

B2535LG

Abstract: aka B2535LG B2535L B2535L diode B2535L AKA B2535L 220 SCHOTTKY BARRIER RECTIFIER aka MBR2535CTL MBR2535CTLG
Contextual Info: MBR2535CTL SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*

B2535L

Abstract: B2535L diode
Contextual Info: MBR2535CTL SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency

b2535l

Abstract: B2535L diode MBR2535CTL
Contextual Info: MOTOROLA Order this document by MBR2535CTL/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier MBR2535CTL . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide

Contextual Info: MOTOROLA Order this document by MBR2535CTL/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide

B2535G

Abstract: b2535 b2535l B2535L diode MBR2535CTL MBR2535CTLG SCHOTTKY BARRIER RECTIFIER aka
Contextual Info: MBR2535CTL SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*

B2535L

Abstract: MBR2535CTL MBR2535CTLG B2535L diode
Contextual Info: MBR2535CTL SWITCHMODEt Power Rectifier The MBR2535CTL employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency

Contextual Info: SANGDEST MICROELECTRONICS MBR2535CTL Technical Data Data Sheet N1014, Rev. - Green Products MBR2535CTL SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • •

0C45

Abstract: MBR2530CTL
Contextual Info: Order this data sheet by M BR2535CTL/D MOTOROLA SEMICONDUCTOR T-03~M TECHNICAL DATA M O T O R O L A SC D I O D E S / O P T O 3TE D O L>3b755S 0 0 0 3 0 5 0 0 C 1 M 0 T 7 MBR2535CTL MBR2530CTL Switchmode Power Rectifiers . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode.

b2535l

Abstract: B2535L diode B2535 B2535L 220 MBR2535CTL
Contextual Info: MBR2535CTL SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency

B2535

Contextual Info: M O TO RO LA Order this document by MBR2535CTL/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier . . employing the Schottky Barrier principle in a large m etal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide

B2535L

Abstract: B2535L diode B2535L 220
Contextual Info: MBR2535CTL SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency

B2535LG

Abstract: aka B2535LG b2535l B2535L diode b2535 B2535L AKA MBR2535CTLG MBR2535CTL
Contextual Info: MBR2535CTL SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*

B2535LG

Abstract: aka B2535LG MBR2535CTLG
Contextual Info: MBR2535CTL SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

Equivalent 50N06

Abstract: MOSFET 50N06 po345 50N06 rfp50n06 equivalent 50N06 DATASHEET AN9664 HIP6002 HIP6003 RFP70N03
Contextual Info: A Pentium Pro Voltage Regulator Module VRM Using the HIP6003 PWM Controller Application Note December 1996 AN9664 Introduction HIP6003EVAL1 Reference Design Today’s high-performance microprocessors, such as the Intel Pentium Pro, present many challenges to their power

Contextual Info: application INFO available UCC1809-1/-2 UCC2809-1/-2 UCC3809-1/-2 Economy Primary Side Controller FEATURES DESCRIPTION • User Programmable Soft Start With Active Low Shutdown The UCC3809 family of BCDMOS economy low power integrated circuits contains all the control and drive circuitry required for off-line and isolated

UC3842 design with TL431

Abstract: flyback uc3842 tl431 72V DC to 12V dC converter circuit diagram pin configuration transistor 2N2222A UCC2809-1 UCC2809 UCC3809 UCCX809-1 UCCX809-2 uc3842 flyback constant current
Contextual Info: application INFO available UCC1809-1/-2 UCC2809-1/-2 UCC3809-1/-2 Economy Primary Side Controller FEATURES DESCRIPTION • User Programmable Soft Start With Active Low Shutdown The UCC3809 family of BCDMOS economy low power integrated circuits contains all the control and drive circuitry required for off-line and isolated

MC33363

Abstract: MC33363P MC33363DW 1N4006 751N MC33363DWR2 UC3842 UC3842 mosfet driver S5502-A
Contextual Info: MC33363 High Voltage Switching Regulator The MC33363 is a monolithic high voltage switching regulator that is specifically designed to operate from a rectified 240 Vac line source. This integrated circuit features an on−chip 700 V/1.0 A SENSEFETt power switch, 450 V active off−line startup FET, duty cycle controlled

FP1 C40

Abstract: C1923 transistor 593D HIP6019B HIP6019BCB Transistor C1923
Contextual Info: HIP6019B Data Sheet Advanced Dual PWM and Dual Linear Power Control The HIP6019B provides the power control and protection for four output voltages in high-performance microprocessor and computer applications. The IC integrates two PWM controllers, a linear regulator and a linear controller as well as

Transistor C1923 pin configuration

Abstract: C1923 transistor 593D HIP6019 HIP6019CB HIP6019EVAL1
Contextual Info: HIP6019 TM Data Sheet April 1998 Advanced Dual PWM and Dual Linear Power Control Features The HIP6019 provides the power control and protection for four output voltages in high-performance microprocessor and computer applications. The IC integrates two PWM controllers,

PK MUR 1100E

Abstract: UC3842 p pwm MC33363P uc3842 pin diagram 104 mylar capacitor datasheet analog devices 751n E187 UC3842 mosfet driver 1100E 1N4006
Contextual Info: Order this document by MC33363/D MC33363 Advance Information High Voltage Switching Regulator The MC33363 is a monolithic high voltage switching regulator that is specifically designed to operate from a rectified 240 Vac line source. This integrated circuit features an on–chip 700 V/1.0 A SenseFET power switch,

T68-52A

Abstract: AN9722 PO564 MBR140P JOLO SPCJ-123-01 Schottky Diode 75V 7A T38-52 capacitor ceramic 33pF mosfet T60 pentium 4 motherboard schematic diagram
Contextual Info: Switchmode DC-DC Converter Family Using HIP6006 and HIP6007 PWM Controller ICs Application Note August 1997 AN9761 Authors: Greg J. Miller, Bogdan M. Duduman Introduction Today’s high-performance microprocessors present many challenges to their power source. High power consumption,

analog devices 751n

Abstract: Nippon Mirror Finish MC33363 MC33363A MC33363ADW MC33363AP TL431B UC3842 1100E 1N4006
Contextual Info: Order this document by MC33363A/D MC33363A Advance Information High Voltage Switching Regulator The MC33363A is a monolithic high voltage switching regulator that is specifically designed to operate from a rectified 240 Vac line source. This integrated circuit features an on–chip 700 V/1.5 A SenseFET power switch,