B160 Search Results

Contextual Info: LITE-ON SEMICONDUCTOR B120B thru B160B SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 20 to 60 Volts FORWARD CURRENT - 1.0 Ampere FEATURES For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Very Low forward voltage drop

Contextual Info: LITE-ON SEMICONDUCTOR B120 thru B160 REVERSE VOLTAGE - 20 to 60 Volts FORWARD CURRENT - 1.0 Ampere SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Very Low forward voltage drop

Contextual Info: LITE-ON SEMICONDUCTOR B150 thru B160 REVERSE VOLTAGE - 50 to 60 Volts FORWARD CURRENT - 1.0 Ampere SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES SMA For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Very Low forward voltage drop

V7-1C17D8-022

Contextual Info: FO-50360-L CW-B1600 REV 6 9 DOCUMENT 0 0 4 1 135 c HANGED VS BY CHECK 26JUN08 BLR 3 85 25 40 O t 3X . I 8 7 ± . 003 CORROSION RESISTANT STEEL ACTUATOR C H A R A C T E R I ST ICS O P E R A T I N G F O R C E - 8 0 G R A M S MA X R E L E A S E F O R C E -8 GRAMS M I N

a19t

Abstract: ba1s 000IH
Contextual Info: TOSHIBA TENTATIVE TC58FYT160/B160FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FYT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable

Contextual Info: B120 thru B160 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop

B140

Abstract: B120 B150 B160
Contextual Info: LITE-ON SEMICONDUCTOR B120 thru B160 REVERSE VOLTAGE - 20 to 60 Volts FORWARD CURRENT - 1.0 Ampere SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Very Low forward voltage drop

Contextual Info: TOSHIBA TENTATIVE TC58FVT160/B160FT-85.-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-M BIT 2M x 8 BITS / 1M x 16 BITS CMOS FLASH M EM O R Y DESCRIPTION The TC58FVT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable

DS13

Contextual Info: B120/B - B160/B 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak

u21140

Abstract: B150B B120B B140B B160B
Contextual Info: B120B t h r u B160B S u r f a c e M o u n t S c h o tt k y B a r r i e r R ectifiers R E V E R SE VO LTAGE 20 TO 60 VOLTS FO RW ARD C U R R E N T 1.0 A M PE R E F ea tu re: “For Surface M ount Application *M etal-Sem iconductor Junction With Guardring •“Epitaxial Construction

BI40

Abstract: B120 B150 B160
Contextual Info: B 120 th ru B160 S u r f a c e M o u n t S c h o t t k v B a r r i e r Rectifiers REVERSE VOLTAGE 20 TO 60 VOLTS FORWARD C l RRENT 1.0 A M PERE Features: *For Surface M o u nt A p p lica tio n * M e ta lS e m ic o n d u c to r Junction W ith G u a rd rin g

a19t

Abstract: TC58FVB160FT 1X16 D8000H-DFFFFH
Contextual Info: TOSHIBA TENTATIVE TC58FVT160/B160FT-85#-10#-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT160/B160 is a 16,777,216 - bit, 3.0-V read-only e lectrically erasable and program m able

Contextual Info: Diodes SMD Type Surface Mount Schottky Barrier Diode KK B160M-220 SOD-323 • Features Unit: mm +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop

B120A

Abstract: SS14
Contextual Info: B120A thru B160A Preliminary Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop

Contextual Info: 211 TT-JAX .173" JACK PANELS SERIES 1600, A1600, B1600, C1600 SERIES 1600 and A1600 Jack Panels w ith optional jacks. (See next page for specific part numbers.) SERIES B1600 and C1600 Jack Panels w ith optional jacks. (See next page for specific part numbers.)

a19t

Abstract: TC58FVB160FT 1X16 TC58FVT160FT
Contextual Info: TOSHIBA TENTATIVE TC58FVT160/B160FT-85#-10#-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable

SPB160100

Abstract: SPB16080 SPB16090 S0T227
Contextual Info: 2 X 160A Schottky Barrier Rectifier SP B16080 - B1601 00 n Dim E Inches M illim eter Minimum Maximum Minimum Maximum Notes A B C D E F G H 1.494 0.976 0.472 0.990 1.049 0.164 0.080 0.372 1.504 0.986 0.480 1.000 1.059 0.174 0.084 0.378 37.95 24.79 12.00 25.15

LSP5522L

Contextual Info: LITELITE-ON SEMICONDUCTOR CORP. ON LITE DISCRETE DIVISION TVS SMAJ7.0A/ 9A SMAJ12A/ 15A SMAJ24A Schottky ESD B340A/ B360B B160/ B240A B2100A 1N5819WL FB340LM Bridge HD06 Switching BAT54A/C/S,WS 1N4148W/ WS LS4148W/WS BAV99W 2010 L15ESDL5V0NA-4 HDMI L30ESDL5V0C6-4 USB2.0

MARKING CODE TL DO-214AC

Abstract: B140 MARKING code 14 DO-214AC B140 SMA 081B120 Device marking code B12 B13 B14 B15 B16
Contextual Info: B120 thru B160 New Product Vishay Semiconductors Surface Mount Schottky Barrier Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 20 V to 60 V IFSM 30 A VF 0.52 V, 0.75 V Tj max. 125 °C, 150 °C DO-214AC (SMA) Features Mechanical Data • •

Contextual Info: B120/B - B160/B VISHAY /l i t e m 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER î i ' I / POWERSEMICONDUCTOR Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency

1X16

Abstract: TC58FVB160FT
Contextual Info: T O S H IB A TENTATIVE TC58FVT160/B160FT-85#-10#-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable

B120-13-F

Contextual Info: B120/B - B160/B 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODELS: B120 B130 B140 B150 B160 Features • · · · · · Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak

ds13002

Abstract: B160
Contextual Info: B120/B - B160/B 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak For Use in Low Voltage, High Frequency

Contextual Info: LITE ON POWER SEMICONDUCTOR B120 thru B160 REVERSE VOLTAGE - 20 to 60 Volts FORWARD CURRENT - 1.0 Ampere SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES SMA For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction