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    MBRS130LT3 Price and Stock

    onsemi MBRS130LT3

    DIODE SCHOTTKY 30V 1A SMB
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    DigiKey MBRS130LT3 Reel 2,500
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    Bristol Electronics MBRS130LT3 35,801
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    MBRS130LT3 19,180 12
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    MBRS130LT3 15,174
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    MBRS130LT3 15,000 12
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    MBRS130LT3 9,562
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    Velocity Electronics MBRS130LT3 810
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    Component Electronics, Inc MBRS130LT3 11,627
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    Win Source Electronics MBRS130LT3 226,000
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    onsemi MBRS130LT3H

    DIODE SCHOTTKY 30V 2A SMB
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    onsemi MBRS130LT3G

    DIODE SCHOTTKY 30V 2A SMB
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    DigiKey MBRS130LT3G Reel 2,500
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    Avnet Americas MBRS130LT3G Reel 290,000 8 Weeks 2,500
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    MBRS130LT3G Ammo Pack 9 Weeks, 2 Days 1
    • 1 $0.478
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    Newark MBRS130LT3G Cut Tape 53,922 1
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    MBRS130LT3G Reel 25,000 2,500
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    RS MBRS130LT3G Bulk 100
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    Bristol Electronics MBRS130LT3G 6,217 9
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    MBRS130LT3G 1,234
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    TME MBRS130LT3G 3,693 1
    • 1 $0.43
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    Ameya Holding Limited MBRS130LT3G 21,966
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    NexGen Digital MBRS130LT3G 1,001
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    Richardson RFPD MBRS130LT3G 10,000
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    Velocity Electronics MBRS130LT3G 362
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    Chip 1 Exchange MBRS130LT3G 16,438
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    Avnet Asia MBRS130LT3G 2,500 8 Weeks 10,000
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    Avnet Silica MBRS130LT3G 12,500 9 Weeks 2,500
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    Chip-Germany GmbH MBRS130LT3G 1,230
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    Chip1Stop MBRS130LT3G 230,000
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    MBRS130LT3G 167,500
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    MBRS130LT3G 6,763
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    Component Electronics, Inc MBRS130LT3G 100
    • 1 $0.65
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    EBV Elektronik MBRS130LT3G 132,500 10 Weeks 2,500
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    Master Electronics MBRS130LT3G 60,000
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    New Advantage Corporation MBRS130LT3G 20,000 1
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    Win Source Electronics MBRS130LT3G 166,000
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    onsemi MBRS130LT3G.

    Schottky Rectifier, 2A, 30V, 403A; Repetitive Peak Reverse Voltage:30V; Average Forward Current:2A; Diode Configuration:Single; Diode Case Style:Do-214Aa (Smb); No. Of Pins:2Pins; Forward Voltage Max:395Mv; Forward Surge Current:40A Rohs Compliant: Yes |Onsemi MBRS130LT3G.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MBRS130LT3G. Reel 2,500
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    Motorola Semiconductor Products MBRS130LT3

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    Bristol Electronics MBRS130LT3 43,850
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    MBRS130LT3 13,932
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    MBRS130LT3 5,597
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    MBRS130LT3 1,047
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    ComSIT USA MBRS130LT3 11,745
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    Velocity Electronics MBRS130LT3 187
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    Chip 1 Exchange MBRS130LT3 535
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    Component Electronics, Inc MBRS130LT3 4,311
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    MBRS130LT3 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBRS130LT3 EIC Semiconductor Schottky Barrier Rectifiers Original PDF
    MBRS130LT3 Motorola Silicon Diode Original PDF
    MBRS130LT3 On Semiconductor Schottky Power Rectifier Original PDF
    MBRS130LT3 On Semiconductor 1A 30V Low Vf Schottky Rectifier; Package: SMB; No of Pins: 2; Container: Tape and Reel; Qty per Container: 2500 Original PDF
    MBRS130LT3 ON Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 2A SMB Original PDF
    MBRS130LT3 On Semiconductor MBRS130 - DIODE 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AA, PLASTIC, CASE 403A-03, SMB, 2 PIN, Rectifier Diode Original PDF
    MBRS130LT3/D On Semiconductor 1.0 AMPERE 30 VOLTS Original PDF
    MBRS130LT3/D On Semiconductor 1.0 AMPERE 30 VOLTS Original PDF
    MBRS130LT3-D On Semiconductor Schottky Power Rectifier Surface Mount Power Packa Original PDF
    MBRS130LT3G On Semiconductor 1A 30V Low Vf Schottky Rectifier Original PDF
    MBRS130LT3G On Semiconductor 1A 30V Low Vf Schottky Rectifier; Package: SMB; No of Pins: 2; Container: Tape and Reel; Qty per Container: 2500 Original PDF
    MBRS130LT3G ON Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 2A SMB Original PDF
    MBRS130LT3G On Semiconductor MBRS130 - DIODE 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AA, LEAD FREE, PLASTIC, CASE 403A-03, SMB, 2 PIN, Rectifier Diode Original PDF

    MBRS130LT3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    403A-03

    Abstract: MBRS130LT3 CASE 403A MBRS130LT3 marking
    Text: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package Motorola Preferred Device . . . Employs the Schottky Barrier principle in a large area metal–to–silicon


    Original
    PDF MBRS130LT3/D MBRS130LT3 403A-03 MBRS130LT3 CASE 403A MBRS130LT3 marking

    diode 1bl3

    Abstract: 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3
    Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS130LT3 diode 1bl3 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3

    1bl3

    Abstract: diode 1bl3 MBRS130LT3 on 1bl3 MBRS130LT3G Micro-D
    Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS130LT3 MBRS130LT3/D 1bl3 diode 1bl3 MBRS130LT3 on 1bl3 MBRS130LT3G Micro-D

    Untitled

    Abstract: No abstract text available
    Text: MBRS130LT3 SCHOTTKY BARRIER RECTIFIER Schottky Power Rectifier Surface Mount Power Package SMB DO-214AA 1.1 ± 0 .3 4 .8 ± 0 .1 5 5 .4 ± 0 .1 5 Employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry


    Original
    PDF MBRS130LT3 DO-214AA)

    1BL3 marking code

    Abstract: MBRS130LT3G SBRS8130LT3G 1bl3 diode MBRS130LT 1BL3
    Text: MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS130LT3G, SBRS8130LT3G MBRS130LT3/D 1BL3 marking code MBRS130LT3G 1bl3 diode MBRS130LT 1BL3

    MBRS340T3G

    Abstract: MBRS360T3G SS34 sma SS14 SOD123 MBRS140T3G SS34 SMB ss24 SMA MBRM140T1G MBRS260T3G SS34 smc
    Text: ONSEMI Part # MBR0520LT1G MBR0530T1G MBR0540T1G MBR120ESFT1G MBR130T1G MBRA130LT3G MBRA140T3G MBRA340T3G MBRD340T4G MBRD360T4G MBRD835LT4G MBRM130LT1G MBRM140T1G MBRM140T3G MBRS1100T3G MBRS130LT3G MBRS140T3G MBRS260T3G MBRS340T3G MBRS360T3G MBRS540T3G MUR120RLG


    Original
    PDF MBR0520LT1G MBR0530T1G MBR0540T1G MBR120ESFT1G MBR130T1G MBRA130LT3G MBRA140T3G MBRA340T3G MBRD340T4G MBRD360T4G MBRS340T3G MBRS360T3G SS34 sma SS14 SOD123 MBRS140T3G SS34 SMB ss24 SMA MBRM140T1G MBRS260T3G SS34 smc

    1bl3 motorola

    Abstract: diode 1bl3 MBRS130LT3 1bl3 on 1bl3 MBRS130LT3 marking schottky power rectifier MOTOROLA motorola diode device data diode 1bl3 141
    Text: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package Motorola Preferred Device . . . Employs the Schottky Barrier principle in a large area metal–to–silicon


    Original
    PDF MBRS130LT3/D MBRS130LT3 1bl3 motorola diode 1bl3 MBRS130LT3 1bl3 on 1bl3 MBRS130LT3 marking schottky power rectifier MOTOROLA motorola diode device data diode 1bl3 141

    1bl3 motorola

    Abstract: diode 1bl3 1BL3 diode 1bl3 141 MBRS130LT3 MBRS130LT3 marking 403A-03 1BL3 141 schottky power rectifier MOTOROLA
    Text: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Schottky Power Rectifier MBRS130LT3 Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with


    Original
    PDF MBRS130LT3/D MBRS130LT3 1bl3 motorola diode 1bl3 1BL3 diode 1bl3 141 MBRS130LT3 MBRS130LT3 marking 403A-03 1BL3 141 schottky power rectifier MOTOROLA

    diode 1bl3

    Abstract: MBRS130LT3
    Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS130LT3 MBRS130LT3/D diode 1bl3 MBRS130LT3

    MBRS130LT3

    Abstract: 403A-03
    Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS130LT3 MBRS130LT3/D MBRS130LT3 403A-03

    1bl3

    Abstract: diode 1bl3 on 1bl3 MBRS130LT3 1BL3 marking code MBRS130LT3G MBRS130LT3G ON SEMICONDUCTOR
    Text: MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS130LT3 MBRS130LT3/D 1bl3 diode 1bl3 on 1bl3 MBRS130LT3 1BL3 marking code MBRS130LT3G MBRS130LT3G ON SEMICONDUCTOR

    Untitled

    Abstract: No abstract text available
    Text: MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS130LT3G, SBRS8130LT3G MBRS130LT3/D

    MBRS130

    Abstract: MBRS130LT3
    Text: MBRS130LT3 SCHOTTKY BARRIER RECTIFIER Schottky Power Rectifier Surface Mount Power Package SMB DO-214AA 1.1 ± 0 .3 4 .8 ± 0 .1 5 5 .4 ± 0 .1 5 Employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry


    Original
    PDF MBRS130LT3 DO-214AA) MBRS130 MBRS130LT3

    diode 1bl3

    Abstract: 1bl3 MBRS130LT3 5M MARKING CODE SCHOTTKY DIODE marking code 1BL3 schottky diode SMB marking code 120 AS 031 1BL3 544 MBRS130LT3G on 1bl3
    Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS130LT3 diode 1bl3 1bl3 MBRS130LT3 5M MARKING CODE SCHOTTKY DIODE marking code 1BL3 schottky diode SMB marking code 120 AS 031 1BL3 544 MBRS130LT3G on 1bl3

    diode 1bl3

    Abstract: 1bl3 1BL3 marking code MBRS130LT3 diode+1bl3 on 1bl3
    Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS130LT3 diode 1bl3 1bl3 1BL3 marking code MBRS130LT3 diode+1bl3 on 1bl3

    diode 1bl3

    Abstract: 1bl3 on 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3 MBRS130LT3 marking CASE 403A
    Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS130LT3 r14525 MBRS130LT3/D diode 1bl3 1bl3 on 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3 MBRS130LT3 marking CASE 403A

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original
    PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    403A-03

    Abstract: MBRS130LT3 MBRS1100T3
    Text: SMB Devices Maximum die size 64 mil x 64 mil CASE 403A-03 Rectifiers — Schottky Device MBRS130LT3 MBRS140T3 MBRS1100T3 V rrm Volts k> Amps •fsm Amps Vf @25°C Volts lR @ 25°C mA 30 40 100 1 1 1 40 40 40 0.395 0.600 0.750 1.000 1.000 0.500 V rrm Volts


    OCR Scan
    PDF 03A-03 MBRS130LT3 MBRS140T3 MBRS1100T3 MURS120T3 MURS160T3 403A-03 MBRS1100T3

    BRS130LT3

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MBRS130LT3 S ch o ttky Pow er R e ctifier Surface Mount Power Package Motorola Preferred Device . . . Employs the Schottky Barrier principle in a large area metal-to-silicon


    OCR Scan
    PDF MBRS130LT3/D BRS130LT3

    403A-03

    Abstract: diode 1bl3 1BL3 1bl3 motorola
    Text: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA S ch o ttky Pow er R e ctifier MBRS130LT3 Surface Mount Power Package . . . Employs the S chottky Barrier principle in a large area m e ta l-to -s ilic o n power diode. S ta te -o f-th e -a rt geom etry features epitaxial construction with


    OCR Scan
    PDF MBRS130LT3/D 03A-03 403A-03 diode 1bl3 1BL3 1bl3 motorola

    motorola diode cross reference

    Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
    Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3


    OCR Scan
    PDF 1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"

    RW marking

    Abstract: CASE 403A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Schottky Power R ectifier Surface Mount Power Package MBRS130LT3 M otorola Preferred Device . . . Employs the Schottky Barrier principle in a large area m e ta l-to -s ilic o n power diode. S ta te -o f-th e -a rt geometry features epitaxial construction with oxide passivation


    OCR Scan
    PDF MBRS130LT3 RW marking CASE 403A

    MBRS130LT3

    Abstract: 0220ca
    Text: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package Motorola Preferred Device . . . E m p loys the Schottky Barrier principle in a large area m etal-to-silicon


    OCR Scan
    PDF MBRS130LT3/D MBRS130LT3 MBRS130LT3 0220ca

    surface mount diode 3F

    Abstract: 403A-03 MBRS130LT3
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Schottky Power Rectifier Surface Mount Power Package MBRS130LT3 Motorola Preferred Device . . . Employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation


    OCR Scan
    PDF MBRS130LT3 Vs290 surface mount diode 3F 403A-03