MBRS130 Search Results

AN-994

Abstract: MBRS130TR
Contextual Info: Bulletin PD-20584 rev. D 03/03 MBRS130TR SCHOTTKY RECTIFIER 1 Amp SMB Major Ratings and Characteristics Characteristics Description/ Features MBRS130TR Units The MBRS130TR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small

403A-03

Abstract: MBRS130LT3 CASE 403A MBRS130LT3 marking
Contextual Info: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package Motorola Preferred Device . . . Employs the Schottky Barrier principle in a large area metal–to–silicon

1bl3

Contextual Info: MBRS130L PA.RCH.LD s e m i c o n d u c t o r Tm DISCRETt ECH°nW0 L 0 “ eSSIGNAL SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high

marking B13 diode SCHOTTKY

Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay

diode 1bl3

Abstract: 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: Bulletin PD-20588 rev. A 09/01 MBRS130LTR 1 Amp SCHOTTKY RECTIFIER SMB Description/Features Major Ratings and Characteristics Characteristics MBRS130LTR Units The MBRS130LTR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small

MBRS130LTRPBF

Abstract: AN-994
Contextual Info: Bulletin PD-20403 07/04 MBRS130LTRPbF SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0 Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Value Units IF(AV) Rectangular waveform 1.0 A VRRM 30 V IFSM @ tp= 5 µs sine 230 A VF @ 1.0Apk, TJ= 125°C

AN-994

Contextual Info: Bulletin PD-20436 07/04 MBRS130TRPbF SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0 Amp VR = 30V Major Ratings and Characteristics Description/ Features Characteristics Value Units IF(AV) Rectangular waveform 1.0 A VRRM 30 V IFSM @ tp= 5 µs sine 230 A 0.42 V - 55 to 125

Contextual Info: VS-MBRS130-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable Cathode • Very low forward voltage drop Anode • High frequency operation • Guard ring for enhanced ruggedness and long

mic29152bu

Abstract: 118k 100uF 10v MIC29152 transistor c111 C105 Diode transistor c106 transistor C110 22uf 350v C106
Contextual Info: 3.3V and 2.7V Palm-Top Supply • • • • VSOURCE C105 22uF 35V + C142 0.1uF R84 10.0k 1% R85 20.0k 1% 1,2,9 20 11 R87 SUSPDIS SW VCC3 D3 MBRS130L Sync FB 4-7 R86 33.2k 1% + C107 100uF 10V 12 R89 20.0k 1% 2 R142 2M 19 14-17 13 Input R88 10k 1% PGND Bias

403A-03

Abstract: MBRS130T3 MBRS130T3G
Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay

SMB MARKING mj

Abstract: Diode SMB marking code 14
Contextual Info: Bulletin PD-20584 rev. E 07/04 MBRS130TR SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0 Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Value Units IF(AV) Rectangular waveform 1.0 A VRRM 30 V IFSM @ tp= 5 µs sine 230 A VF @ 1.0Apk, TJ= 125°C

Contextual Info: Bulletin PD-20588 rev. C 05/02 MBRS130LTR 1 Amp SCHOTTKY RECTIFIER SMB Description/Features Major Ratings and Characteristics Characteristics MBRS130LTR Units The MBRS130LTR surface-mount Schottky rectifier has been designed for applications requiring low forward drop

1bl3

Abstract: diode 1bl3 MBRS130LT3 on 1bl3 MBRS130LT3G Micro-D
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRS130LT3 SCHOTTKY BARRIER RECTIFIER Schottky Power Rectifier Surface Mount Power Package SMB DO-214AA 1.1 ± 0 .3 4 .8 ± 0 .1 5 5 .4 ± 0 .1 5 Employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry

1BL3 marking code

Abstract: MBRS130LT3G SBRS8130LT3G 1bl3 diode MBRS130LT 1BL3
Contextual Info: MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRS130L MBRS130L Features • Compact surface mount package with J-bend leads. • 1.5 Watt Power Dissipation package. • 1.0 Ampere, forward voltage less than 395 mv. SMB/DO-214AA Color Band Denotes Cathode Mark: 1BL3 Schottky Rectifiers Absolute Maximum Ratings*

Contextual Info: VS-MBRS130LTRPbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable • Very low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode

Contextual Info: Bulletin PD-20584 rev. E 07/04 MBRS130TR SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0 Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Value Units IF(AV) Rectangular waveform 1.0 A VRRM 30 V IFSM @ tp= 5 µs sine 230 A VF @ 1.0Apk, TJ= 125°C

Contextual Info: Bulletin PD-20403 07/04 MBRS130LTRPbF SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0 Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Value Units IF(AV) Rectangular waveform 1.0 A VRRM 30 V IFSM @ tp= 5 µs sine 230 A VF @ 1.0Apk, TJ= 125°C

AN-994

Abstract: MBRS130LTR
Contextual Info: Bulletin PD-20588 rev. D 03/03 MBRS130LTR SCHOTTKY RECTIFIER 1 Amp SMB Description/ Features Major Ratings and Characteristics Characteristics MBRS130LTR Units IF AV Rectangular waveform 1.0 A VRRM 30 V IFSM @ tp= 5 µs sine 230 A VF @ 1.0Apk, TJ= 125°C

AN-994

Abstract: MBRS130LTR
Contextual Info: Bulletin PD-20588 rev. B 02/02 MBRS130LTR 1 Amp SCHOTTKY RECTIFIER SMB Description/Features Major Ratings and Characteristics Characteristics MBRS130LTR Units The MBRS130LTR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small

Contextual Info: Bulletin PD-20584 rev. C 05/02 MBRS130TR SCHOTTKY RECTIFIER 1 Amp SMB Major Ratings and Characteristics Characteristics Description/Features MBRS130TR Units The MBRS130TR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small

Contextual Info: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay