2SC253 Search Results

2SC2535

Abstract: 400V to 6V DC Regulator
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC2535 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED HIGH VOLTAGE SW IT C H IN G APPLICATIONS. SW ITCHIN G REGULATOR APPLICATIONS. JO 3 MAX HIGH SPEED D C-DC CONVERTER APPLICATIONS. • Excellent Switching Time • High Collector Breakdown Voltage V C E O = 400V

2SC2532

Contextual Info: 2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2532 Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications Unit: mm • High hFE: hFE (1) = 5000 (min) (IC = 10 mA) hFE (2) = 10000 (min) (IC = 100 mA)

2SC2539

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2539 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 2 5 3 9 is a silicon N P N epitaxial planar type transistor designed Dimensions in mm fo r R F pow er am plifiers in V H F band m ob ile radio applications.

2SC2532

Contextual Info: 2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2532 Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications • Unit: mm High hFE: hFE (1) = 5000 (min) (IC = 10 mA) hFE (2) = 10000 (min) (IC = 100 mA)

2SC288a

Abstract: MMBR2857 TP390 TP393 S763T 40518 BF378 2N5652 s763 72 sot 23
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO -5 10 15 20 25 30 35 40 2N3600 2SC251 2SC251A 2SC251A 2SC252 2SC252 2SC253 BFX73 2N2729 M90 BF689 BF689 BFS17 2SC387 AG-TM 2N3833 2N3833 2N3834 2N3834 2N3834 2N3835 2N3835 K2115 ST2120 MMBR2857 40517

TRANSISTOR 2SC2538 equivalent

Abstract: 2sc2538 RF coil MRI circuit 15 w RF POWER TRANSISTOR NPN IT4-40
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2538 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 25 3 8 is a silico n N P N epitaxial planar type transistor designed Dim ensions in mri ¿ 5 .1 M A X fo r R F am plifiers on V H F band m obile radio applications.

2SC2532

Abstract: LED Driver IC toshiba
Contextual Info: TOSHIBA 2SC2532 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2532 Unit in mm A U D IO FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE FOR LED LA M P APPLICATIONS. + 0.5 TEMPERATURE COM PENSATION APPLICATIONS. • High hjrg . hjr;E (1) = 5000 (Min.) (IC = 10mA)

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2538 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 2 5 3 8 is a silico n N P N epitaxial planar type transistor designed Dim ensions in mn 0 5 .1 M AX fo r R F a m plifiers on V H F band m obile radio applications.

Contextual Info: 2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2532 Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications • Unit: mm High hFE: hFE (1) = 5000 (min) (IC = 10 mA) hFE (2) = 10000 (min) (IC = 100 mA)

RF POWER TRANSISTOR NPN

Abstract: TRANSISTOR 2SC2538 equivalent 2SC2538 8D2T hu cj voe
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2538 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC2538 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on V H F band mobile radio applications. FEATURES • • • High power gain: Gp e ^ 10dB

2SC2532

Contextual Info: TO SH IBA 2SC2532 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2532 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE FOR LED LAMP APPLICATIONS. TEMPERATURE COMPENSATION APPLICATIONS. + 0.5 2 .5 -0 .3 + 0.25 • High hpE : 1*FE (1) = 5000 (Min.) (IC = 10mA)

2SC2530

Abstract: 2SA1080
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1080 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -40V(Min.) ·Good Linearity of hFE ·Complement to Type 2SC2530 APPLICATIONS ·Designed for medium power amplifier applications.

but46a

Abstract: PEC730
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 -30 2SC251SM 2SC2535 2SC2535 2SC3570 STI401 STI413 IR413 BU129 BUT11 SPT3439 BUT11F BUT11F 2SC2518L MJ425 MJ425 MJ425 BUT46 BU120 ~~6~~1SK 35 40 2S09S7 PMS5K425 SOT1015 BUS11A BUT11A BUW11AF BUX46A

DC DC converter 50mA 400V

Abstract: 2sc2534 200v dc voltage regulator DC DC converter 5v to 400V npn transistors 400V 0,5a DC DC converter 5v to 200V ic 400V to 6V DC Regulator
Contextual Info: SavantIC Semiconductor Product Specification 2SC2534 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High collector breakdown voltage : VCEO=400V Min ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max. APPLICATIONS ·High speed high voltage switching applications

TRANSISTOR 2SC2538 equivalent

Abstract: 2SC2538
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2538 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2538 is a silicon NPN epitaxial planar type transistor designed fo r RF amplifiers on V H F band mobile radio applications. Dimensions in mm 0 5 .1 M A X FEATURES

DC DC converter 50mA 400V

Abstract: 2sc2534 DC DC converter 5v to 200V ic DC DC converter 5v to 400V
Contextual Info: Inchange Semiconductor Product Specification 2SC2534 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High collector breakdown voltage : VCEO=400V Min ・Excellent switching time : tr=1.0 s(Max.) : tf=1.0μs(Max. APPLICATIONS ・High speed high voltage switching applications

2sa 940

Abstract: 2SC2530 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu
Contextual Info: FUJITSU MICROELECTRONICS m 3 7 4 ^ 5 0Dlb5Sb 2 BBFMI 31E D FUJITSU January 1990 Edition 1.1 PRODUCT P R O FILE' 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with Fujttus's unique Ring Em itter Transistor R E T technology. R ET devices are

2SC2538

Abstract: TRANSISTOR 2SC2538 equivalent dmb transistor transistor BA RW ET11 2SC2S38 i7050 2Sc2538 equivalent
Contextual Info: M fT S U ß JS H I R F P O W E R T R A N S IS T O R 2SC2538 NPN E P IT A X IA L PLA N A R T Y P E D E S C R IP T IO N 2SC 2 S3 8 it a u Iico n N PN epitaxial planar type transistor b«»grxsd for R F am plifiers on V H F band m obile radio applications. OUTLINE DRAWING

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2532 Features • NPN Silicon Epitaxial Transistors High hFE: hFE 1 =5000 (Min.) (IC=10mA) hFE(2)=10000 (Min.) (IC=100mA) Maximum Ratings

2SC2534

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC2534 HIGH SPEED HIGH V O LTAG E SW ITCHING APPLICATIONS. IN D U ST R IA L A PPL IC A T IO N S SW ITCHING REGULATOR APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. • E x c e lle n t S w itch in g T im e : t r = 1 .0 ^ s M ax.

2SC2532

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2532 U nit in mm A U D IO FREQUENCY AM PLIFIER APPLICATIONS. DRIVER STAGE FOR LED LA M P APPLICATIONS. + 0.5 2 .5 - 0.3 TEM PERATU RE C O M P E N SA T IO N APPLICATIONS. • High hpE + 0.25 . 1.5 - 0.15 : h fE l = 5000 (Min.) (IC = 10mA)

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2539 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 2 5 3 9 is a silicon N P N epitaxial planar type transistor designed D im e n s io n s in m m for R F power amplifiers in V H F band m obile radio applications.

2SC2539

Abstract: transistor 2SC2539 RF POWER TRANSISTOR NPN vhf transistor rf vhf
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2539 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2539 is a silicon NPN epitaxial planar typ e transistor designed fo r RF power am plifiers in V H F band m obile radio applications. D im e n s io n s in m m

2SC2535

Abstract: npn transistors 400V 3A
Contextual Info: SavantIC Semiconductor Product Specification 2SC2535 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High collector breakdown voltage : VCEO=400V Min ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max. APPLICATIONS ·High speed high voltage switching applications