2SC387 Search Results

2SC3875

Abstract: ALY TRANSISTOR 2SC3875-GR ALG Transistor 2SC3875Y Elite Enterprises (H.K.) transistor ALY 2sc3875gr 2SC3875-Y Elite Enterprises
Contextual Info: 2SC3875 NPN Epitaxial Silicon Transistor SOT-23 GENERAL PURPOSE TRANSISTOR Collector-Emitter Voltage: VCEO = 50V Collector Dissipation: PC = 150mW Absolute Maximum Ratings TA=25oC Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage

2SC3871

Contextual Info: Power Transistors 2SC3871 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V Collector to emitter voltage

2SC3875

Contextual Info: ST 2SC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC3876

Contextual Info: ST 2SC3876 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y and according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC3875

Contextual Info: ST 2SC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC3876

Contextual Info: ST 2SC3876 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y and according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC387

Contextual Info: Power Transistors 2SC3871 2SC3871 Silicon P N P Trip le-D iffu sed Planar Type Package Dim ensions High Breakdown Voltage, High Speed Switching U n it I : • Features 4 .4 m a x . • High speed switching • High collector-base voltage 2.9max, V cbo

Contextual Info: Power Transistors 2SC3871 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 0.7±0.1 10.0±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V Collector to emitter voltage

2SC288a

Abstract: MMBR2857 TP390 TP393 S763T 40518 BF378 2N5652 s763 72 sot 23
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO -5 10 15 20 25 30 35 40 2N3600 2SC251 2SC251A 2SC251A 2SC252 2SC252 2SC253 BFX73 2N2729 M90 BF689 BF689 BFS17 2SC387 AG-TM 2N3833 2N3833 2N3834 2N3834 2N3834 2N3835 2N3835 K2115 ST2120 MMBR2857 40517

2SC3874

Contextual Info: JMnic Product Specification 2SC3874 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PL package ・High speed switching ・High VCBO ・Wide area of safe operation APPLICATIONS ・For high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2

2SC3872

Abstract: 001695
Contextual Info: Power T ransistors 2SC3872 2SC3872 Silicon PNP Triple-Diffused Planar Type • P ackage Dim ensions High Breakdown Voltage, High Speed Switching U n it I mm ■ Features • High speed switching • High collector-base voltage V c b o • Wide area of safety operation (ASO)

Contextual Info: Power Transistors 2SC3873 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 15.0±0.3 11.0±0.2 ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500

Contextual Info: Power Transistors 2SC3874 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage

2SC1815

Abstract: 2sc372 2sc1741 2sc2061 2sc2381 2sc1907 2SC2284 2sc1726 2SC2495 2sc458
Contextual Info: - 10 2 - £ tt € Manuf. 2SC 944$ a « 2SC 945 / s n 2SC 947 ^ T 2SC 948 ^ te T m Type No. * * * h SANYO * M B TOSHIBA S NEC B ÍL HITACHI 2SC1907 2SC1215 2SC2926 2SC458 2SC2634 2SC2410 2SC828 2SC387A %rBM 2SC1959 2SC945 2SC454 WrB m 2SU»4ö 2SC454 *

2SC3873

Abstract: b326s
Contextual Info: Power Transistors b^BSflS4 D O I M M TT3 M P N C B 2SC3873 PANASONIC INDL/ELEK SEMI 2SC3873 b'iE » Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U n it • Features 6 .9 m in . • High speed switching

2SC3874

Contextual Info: Power Transistors 2SC3874 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm φ 3.3±0.2 5.0±0.3 3.0 TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO

2SC3871

Contextual Info: Power Transistors 2SC3871 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage

2SC3872

Contextual Info: Power Transistors 2SC3872 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ● ● High-speed switching High collector to base voltage VCBO Wide area of safe operation ASO Full-pack package which can be installed to the heat sink with

2SC3870

Contextual Info: Power Transistors 2SC3870 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V Collector to emitter voltage

2SC3763

Abstract: 2SD1267A 2SC3536 RT1N140C 2SC3691 2SC3855 3845 3844 3841 3843
Contextual Info: - 174 - a s tt Type No. « Manuf. m = SANYO JIC ^ TOSHIBA B ^ NEC B HITACHI í ± 3 FUJITSU tfi T MATSUSHITA 2SC 3828 K 2SC 3829 ífi T 2SC 3830 -y-VÍTV -y-V'TV 2SC3087 2SC2335 2SC3090 2SC3536 2SC 3832 ✓ 2SC3039 2SC2335 2SC2898 2SC3870 2SC 3833 -y-yry

2SC3873

Contextual Info: SavantIC Semiconductor Product Specification 2SC3873 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High VCBO ·High speed switching ·Good linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high speed switching applications

2SC3874

Contextual Info: Power Transistors 2SC3874 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V

2SC3874

Abstract: 2SC387
Contextual Info: Inchange Semiconductor Product Specification 2SC3874 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PL package ・High speed switching ・High VCBO ・Wide area of safe operation APPLICATIONS ・For high-speed switching applications PINNING PIN DESCRIPTION

106m1

Abstract: 2SC3871 J300C
Contextual Info: Power Transîstors 2SC3871 2SC3871 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features U n it I mm 4.4m ax. • H igh s p e e d sw itch in g • H igh c o lle c to r-b a s e v o ltag e ►2.9max.