2N4958 Search Results

MRF544

Abstract: MRF542 MRF543 2n5179 MRF545 317D-01 2N5829 MRF502 2N2857 2N4957
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued TO-72 METAL CAN Gain - BW Gain Noise Figure Maximum Ratings v (BR)CEO mA f MHz V mA ^T mW GHz mA 2N5031 2N4958* 2N4959* 2N5829* 1.0 1.0 1.0 1.2 5.0 2.0 2.0 2.0 2.5 3.3 3.8 2.5 450 450 450 450 1.0 2.0 2.0 2.0 14 16 15

2n4957

Abstract: 2n4958 n4959 2N4959 transistor 2n4959
Contextual Info: s G S - T H O M S ON Q 4 C^ D | 7 ^ 2 3 7 DODQlIN 1 | T - 3 ^ / 5" SOLID STATE MICROWAVE 2N4957 2N4958 2 N4959 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936 • 215 362-8500 ■ TW X 510-661-7299 DESCRIPTION PNP S ILIC O N SMALL S IG N A L RF TRANSISTOR

2N3293

Abstract: 2N3294 2n4957 40244 2N5851 2n3287 2N335 2n3600 2N5852 2N2857
Contextual Info: U-H-F AMPLIFIERS Cont’d Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 2N3839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288 2N3932 2N4874 2N3308 2N4875 2K33Q7 2N3933 2N5181 2N5182 2N4934 2N4957 2N4958 2N4959 2NS829 2N4259 2N4876

2N4959 MOTOROLA

Abstract: 2N4957 2N4957 MOTOROLA transistor on 4959 2n4959
Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA b3b72S 4 OQTMOM'i _ T = *3 H • SEMICONDUCTOR ■ ■ 1 «MOTb 5 2N4957 2N4958 2N4959 TECHNICAL DATA The R F Line | Iß = -3 0 mA HIGH FREQUENCY TRANSISTORS PNP SILICON HIGH FREQUENCY TRANSISTORS . . . d e s ig n e d fo r h ig h -g a in , lo w -n o is e a m p lifie r, o sc illato r and

2C4957

Abstract: 2N4957 2N4957UB 2N4958 2N4958UB 2N4959 2N4959UB SD4957 SD4957F SQ4957
Contextual Info: Data Sheet No. 2C4957 Generic Packaged Parts: Chip Type 2C4957 Geometry 0006 Polarity PNP 2N4957, 2N4958, 2N4959 Chip type 2C4957 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N4957, 2N4957UB, 2N4958, 2N4958UB, 2N4959, 2N4959UB, SD4957, SD4957F,

2N4959 MOTOROLA

Abstract: 2n4957 sis 2N4957 2N4959 2n4958
Contextual Info: MOTOROLA S E M IC O N D U C T O R 2N4957 2N4958 2N4959 TECHNICAL DATA The R F L in e lc = — 30 m A PNP SILICON HIGH FREQUENCY TRANSISTORS HIG H FREQUENCY TR AN SIS TO R S . . . designed fo r high -ga in , lo w -no ise am plifie r, o scilla to r and m ixe r applications.

2N3294

Abstract: 2N335 40240 2N337 2n3600 2N2857 2N3292 2N3293 2N3478 2N3839
Contextual Info: U-H-F AMPLIFIERS Cont’d Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 2N3839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288 2N3932 2N4874 2N3308 2N4875 2K33Q7 2N3933 2N5181 2N5182 2N4934 2N4957 2N4958 2N4959 2NS829 2N4259 2N4876

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: General Transistor Corporation SMALL SIG N A L TRANSISTORS • ■ ■ NPN TRANSISTORS FOR RF APPLICATIONS VCEO V M/OtNUH RATINI3S le (mA) Ptol (mW) 2N91B 2N2857 2N3600 2N3839 15 15 15 15 50 40 50 40 200 200 200 200 2N5031 2N5032 2N5179 2N5842 10 10 12 10

2N2950

Abstract: TRANSISTOR 2N2950 2N2857 2N3137 2n3600 2N5032 Transistor 2N3866 2N3839 2N5031 2N5179
Contextual Info: General Transistor Corporation SMALL SIG N A L TRANSISTORS WÊÊÊM NPN TRANSISTORS FOR RF APPLICATIONS TRANS FREQ. t r i le U UtNUM RATINI3S dB) NOISE FIGURE MF AND le {ÿf (mA) 5 3.8 3.0 3.0 5 5 5 25 1400 1200 10 10 600 800 1000 1000 1000 750 800 800 1200

2N5179

Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

MRF965

Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

BFR99

Abstract: 2C4957 2n4957 die SILICON DICE motorola transistor dice
Contextual Info: MOTORO LA SC -CDIODES/OPTOJ 6367255 MOTOROLA SC 34 DlTJfc.3fc.72S5 003Ô0S4 CD I O D E S / O P T O 34C 38054 D T -3 Ì-J3 SILICON RF TRANSISTOR DICE continued) 2C4957 DIE NO. — PNP LINE SOURCE — RF502.57 c« This die provides performance equal to or better than that of

2N5109 motorola

Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­

2N5109 motorola

Abstract: BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

NE24483

Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC

2n3287

Abstract: 2N3294 40244 2N335 2N5851
Contextual Info: 8134693 SEMICOA 40 D e J fll34bc]3 0 G 0 0 1 3 1 7 J ~ - T - a i - C > \ U-H-F AMPLIFIERS Cont’d Electrical Characteristics @ 25°C Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 210839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288

2N3866 MOTOROLA s parameters

Abstract: 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

900 mhz oscillator using bfr91 transistor

Abstract: Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­