B3B72S Search Results

4C6 toroid

Abstract: UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH GQRS l b f l MOTOROLA 3 ■ MOTb T=3^ - SEMICONDUCTOR TECHNICAL DATA T P 1940 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode 300 W, 50 V, 108 MHz N-CHANNEL MOS BROADBAND RF POWER FET

J0350

Abstract: JO3501 FTE801 JO3502 PTE801 J03501
Contextual Info: MOT OROL A SC XSTRS/R F 4bE D • b3b72SM 00*141% 3 ■NOTb -R 53-O I MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA J03501 J03502 PTE801 The RF Line NPN Silicon UHF Power Transistors . . . designed fo r 24 Volt UHF large-signal applications in industrial and commercial FM

MC34050 "cross reference"

Abstract: MC34051 cross reference MC26LS32 AM26LS30 CROSS REFERENCE AM26L532 Am26LS32 "cross reference" MC75176 eia 232 quad line driver P646L MC75107
Contextual Info: ' MOTOROLA SC TELECOM 4bE D WÊ b3b72S3 Q QÔ 3 S 2 Q S MM0T5 Line Drivers General Purpose Output Current tprop Delay Capa» Time billty Max (ns) (mA) 15 15 S = Single Ended D = Differ­ ential Party Line Opera­ tion D Strobe or Enable 1/ 1/ 1/ l/ 1/ 1/

Contextual Info: 4bE D b3b72S4 GQTET? T • M0Tb"P33-3 | MOT OROL A SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C6052HV Chip PNP Silicon Darlington Power Transistor DM0 unm Discrete Military Operation . . .designed for general-purpose am plifier and low-frequency switching applications.

Contextual Info: 4bE D • b3b72S4 aOTERôl 1 ■HOTt"T=33-l"] MOTOROLA SC CXSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C6193HV Chip PNP Silicon Medium-Power Transistor DMO JfJr.ji Utfuf . .for use in switching and wide-band amplifier applications. DÌSCTG tG • Saturation Voltage — 1.2 Vdc @ 5.0 Ade

Contextual Info: MOTOROLA SC DIODES/OPTO 2SE D b3b72S5 0001161 5 T -à f-n MCR&164-67 (See 2N51681 Thyristors f e » '- - 4 ^ d S i Silicon Controlled Rectifiers M CR6200 S6210 S6 2 2 0 Series . . . designed for industrial and consumer applications such as power supplies,

MJ10016HX

Contextual Info: !4bE D • b3b72S4 DORS^QS MOTOROLA SC 7 ■MOTt 7^2^27 XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10016HX, HXV NPN Silicon Power Darlington Transistor DM0 m in i Discrete Military Operation . .designed for high-voltage, high-speed power switching in inductive circuits where fall

539 MOTOROLA transistor

Abstract: LT4700 transistor rf m 2528 Transistor motorola 513 552 transistor motorola 52604 MOTOROLA 03460
Contextual Info: 12E 0 I b3b72S4 aoa?24S T | M OTGRCLA SC MOTOROLA T - U -X I XSTRS/R F SE M IC O N D U C T O R TECHNICAL DATA LT4700 The RF Line N P N Silicon High Frequency Transistor 1C = 50 mA HIGH FREQUENCY TRANSISTOR NPN SILICON . designed primarily for use in low noise, small-signal amplifiers in satellite down con­

EM- 546 motor

Abstract: 2N6545 2N6545 Motorola 2N6544
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3b72S4 QQflMbbt Ö | T - S 3 - /3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta , S lie e t 8 AM PERE NPN SILICON POWER TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The 2N6545 transistor is designed for high-voltage, high-speed,

bfy50

Abstract: FY51
Contextual Info: M O TO R OL A SC X S T R S /R F 12E D I b3b72S4 aGöbMäS B | BFYSO thru BFY52 M A X IM U M RATINGS R atin g S ym b o l BFY BFY BFY . 50 81 52 U n it C ollector-E m itter Voltage VcEO 35 30 20 Vdc C ollector-Base Voltage VCBO 80 60 40 Vdc E m itter-Base Voltage

2N869A

Abstract: 2N869A JAN 2N4453 2N869A JANTX TO206AA 313 Motorola
Contextual Info: MO T O R O L A SC X S TR S/ R F 12E D | b3b72S4 Q O Ö b a S 1» T-Z7-IS 2N869A M A X IM U M R A T IN G S R ating C o llector-E m itter Voltage Sym bol 2N869A 2N4453 U n it VcEO 18 18 Vdc Vdc 25 C o llector-E m itter Voltage VcES Collector-Base Voltage V cB O

Motorola Transistor 3-252

Abstract: Motorola 3-252
Contextual Info: 4bE D • b3b72S4 QORHTHfl 3 ■ nOTf'FZl-Cft MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR) TECHNICAL DATA 2C3251AHV Chip PNP Silicon Small-Signal Transistor A IM »#####/ . .designed for dc to VHF amplifier and general-purpose switching applications. DiSCr&t&

2N3948

Contextual Info: MO T O R O L A SC XSTRS/R F 4bE D • b3b72St4 00^403^ *1 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N3948 The R F Line 1.0 W - 400 MHz HIGH FREQUENCY TRANSISTOR N PN S IL IC O N NPN SILICON HIGH-FREQUENCY TRANSISTOR . . . designed for amplifier applications i n industrial and com*

Contextual Info: bbE MOTOROLA D SC • b3b72S3 0DflTQ71 W I M0 T5 T E L EC OM MC33178 MC33179 MOTOROLA SEMICONDUCTOR! TECHNICAL DATA High Output Current Low Power, Low Noise Bipolar Operational Amplifiers The MC33178/9 series is a family of high quality monolithic amplifiers

MAC4111M

Abstract: MAC4121D
Contextual Info: MOTOROLA SC DIODES/OPTO 2SE D • b3b72SS QOfiOTMfi 1 m f'& t Z Triacs Bidirectional Triode Thyristors . . . designed primarily for industrial and military applications for the fullwave control of ac loads in applications such as light dimmers, power supplies, heating

iskaa

Abstract: chip die npn transistor
Contextual Info: 4bE » • b3b72S4 ÜQTSRSS Q ■ H 0 T b T - 3 > ^ \ MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR ■ h h h b h b h h b h TECHNICAL DATA 2C3501HV Chip NPN Silicon. Small-Signal Transistor A IM »ff# ff# . .designed for general-purpose switching and amplifier applications.

FLC 100

Contextual Info: 4bE D • b3b72Si4 GG'iaTO? MO T O R O L A SC □ ■ HOTb XSTRS/R F MOTOROLA SEMICONDUCTOR ■ m h h h h m h m h h TECHNICAL DATA NPN MJ11032HX, HXV PNP MJ11033HX, HXV NPN/PNP Silicon Complementary Power Darlington Transistors DM0 lllllll Discrete M ilitary

Contextual Info: MOT ORCLA SC XSTRS/R F 1EE D | b3b72S4 DGflb2E7 3 | MAXIMUM RATINGS Sym bol Value Collector-Emitter Voltage VCEO 60 Vdc Collector-Emitter Voltage {Rgg = 10 Ohms VCER 80 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage V EBO 7,0 Vdc Collector Current — Continuous

Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH MOTOROLA 3 T - 3 3 - 1 3 ■I SEM ICONDUCTOR TECHNICAL DATA 2N6166 T h e R F L in e 100 W A T T S - 150 MHz R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN S IL IC O N designed f o r V H F p o w e r a m p lifie r a p p lic a tio n s in m ilita ry and in ­

30255

Abstract: qSOT-23
Contextual Info: M O T O R O L A SC i D I O D E S / O P T O } 6 3 6 7 2 5 5 M O T O R O L A SC 34 DF|b3b72SS DIODES/OPTO 34C 003Ô2SS q 30255 SOT23 (continued) BCW66F,G,H DEVICE NO. SMALL-SIGNAL NPN TRANSISTOR TOP VIEW C I I • *— ' - t =i B Device D e s ig n e d fo r lo w -freq u en cy d river s ta g e an d switching

2N4959 MOTOROLA

Abstract: 2N4957 2N4957 MOTOROLA transistor on 4959 2n4959
Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA b3b72S 4 OQTMOM'i _ T = *3 H • SEMICONDUCTOR ■ ■ 1 «MOTb 5 2N4957 2N4958 2N4959 TECHNICAL DATA The R F Line | Iß = -3 0 mA HIGH FREQUENCY TRANSISTORS PNP SILICON HIGH FREQUENCY TRANSISTORS . . . d e s ig n e d fo r h ig h -g a in , lo w -n o is e a m p lifie r, o sc illato r and

2N706

Abstract: 2N706A J 2N706 2N706AB 2N706B 2N706 JAN 2N2368
Contextual Info: MOTOROLA SC XSTRS/R F D | b3b72SM OOflbait. 1 | M A X IM U M R A T IN G S R ating Collector-Em itter V olta g e 2N 706A,B C ollector-E m itter Voltag eO C o llector-Base V olta g e Em itter-Base V olta g e 2N706 2N 706A 2N706B C o llector Current 2N706AB

TP3022A

Abstract: UHF/power amplifiers motorola rf Power Transistor
Contextual Info: MOTOROLA SC XSTRS/R F Mb E D • b3b72SH ä ■ MOTb OD'ÌSSIS ^ - MOTOROLA 3 3 -0 7 ■ SEMICONDUCTOR TECHNICAL DATA Advance Inform ation The RF Line UHF P o w e r T ra n sis to r . . . designed for com m on-em itter operation in the 900 MHz m obile radio band. Use

2N6986

Abstract: G124 C11-C15 C11C15
Contextual Info: MOTOROLA SC CXSTRS/R F bTE T> b3b72S4 D1QG124 35T MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n Push-Pull RF P o w er T ran sisto r . . . designed primarily for wideband large-signal output and driver amplifier stages In the 30 to 500 MHz frequency range.