2SK1957
Abstract: 4AM15
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
2sk19574am15 |
PDF
|
6AM14
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
d-856226am14 |
PDF
|
2SK1275
Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
|
OCR Scan
|
10-pin12-pin4ak172sk972+134ak152sk9712sk12022sk12032sk12042sk6962sk12754am146am122sk9702sk9732sk9754ak16
|
PDF
|
2SK1778
Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
|
OCR Scan
|
10-pin12-pin4ak172sk972+144ak152sk9712sk16652sj2152sj2172sk13032sk17782sk12994am12transistor 2sk13042sj1774ak222sk1919transistor 2sk
|
PDF
|
Hitachi 2SJ
Abstract: Hitachi DSA002751
Contextual Info: 4AM14 Silicon N-Channel/P-Channel Complementary Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ² 0.17 ½, VGS = 10 V, ID = 4 A P-channel: RDS(on) ² 0.2 ½, VGS = –10 V, ID = –4 A
|
Original
|
4am142sk970o-220ab2sk1093+5o-220fm2sj1722sj175hitachi 2sjhitachi dsa002751
|
PDF
|
gd79
Abstract: Hitachi 2SJ Hitachi DSA002751
Contextual Info: 6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, ID = 5 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, ID = –5 A
|
Original
|
6am132sk971o-220ab2sk1094+6o-220fm2sj1732sj176gd79hitachi 2sjhitachi dsa002751
|
PDF
|
2sk 4207
Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9
|
Original
|
d-856222sk 42072sk1762sk975 equivalent+72sj1772sj318pm45502c2sk22252sk1058 2sj162pwm 100w audio amplifier2sk1336 equivalent
|
PDF
|
4AM14
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
4am14 |
PDF
|
2SK1957
Abstract: 4AM15 SP-12TA Hitachi DSA00316 SP12TA
Contextual Info: 4AM15 Silicon N-Channel/P-Channel Power MOS FET Array ADE-208-1213 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance N Channel: RDS(on) 0.5 , VGS = 10 V, I D = 2 A P Channel: RDS(on) 0.9 , VGS = –10 V, I D = –2 A
|
Original
|
4am15ade-208-1213sp-12ta2sk1957+2hitachi dsa00316sp12ta
|
PDF
|
Hitachi DSA00315
Abstract: 6AM14
Contextual Info: 6AM14 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • • • • Low on-resistance Low drive current High speed switching High density mounting Outline SP-12TA 5 S 12 S Pch 6 G 11 G D3 8 G D7 9 G 4G Nch
|
Original
|
6am14sp-12tahitachi dsa00315 |
PDF
|
IC51-128
Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005
Contextual Info: Hitachi Semiconductor Package Data Book Introduction Contents Section 1 Introduction of Packages 1.1 Types of Packages and Advantages 1.2 IC Package Name and Code Indication 1.3 Method of Indicating IC Package Dimensions 1.4 Lineups in Terms of Shapes and Materials
|
Original
|
ic51-128transistor fpq 630pc-68ttp-48df+6of ic 7421enplas fpqenplaspt740 abam fm radiohitachi dsautaz005
|
PDF
|
APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
|
OCR Scan
|
ade-40850502capc ups es 500 circuit diagramsk 100 gale 065 tf+82sk1058 mosfet application notesapc ups circuit diagram es 725general instrument data book2sk2264esi 252 impedance metertransistor bf 175pf01442sk212
|
PDF
|
HT 1200-4
Abstract: YAMAICHI ic234 PT740 AB TSSOP YAMAICHI SOCKET FP-20-0.65-01 IC51-1444-1354-7 PT817 Enplas drawings IC51-2084-1052-11 IC 7418 IC51-0242-1341
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001B 3rd Edition March/97 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher functional
|
Original
|
march/97ht 1200-4yamaichi ic234pt740 ab+7tssop yamaichi socket fp-20-0.65-01ic51-1444-1354-7pt817enplas drawingsic51-2084-1052-11ic 7418ic51-0242-1341
|
PDF
|
HT 1200-4
Abstract: IC51-2084-1052-11 IC51-0242-1341 YAMAICHI ic234 transistor fpq 630 IC51-0404-1511 fpq-144-0.5-03 648-0482211-A01 IC189 Series Open Top SOP, SSOP, TSOP Type I a HLQFP 176 Package drawing
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001C 4th Edition March/98 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher
|
Original
|
march/98intern844-347360ht 1200-4ic51-2084-1052-11+8ic51-0242-1341yamaichi ic234transistor fpq 630ic51-0404-1511fpq-144-0.5-03648-0482211-a01ic189 series open top sop, ssop, tsop type i ahlqfp 176 package drawing
|
PDF
|
|
|
PT740 AB
Abstract: PM351 transistor 9726 126 EDR-7313 ED-7402 texas instruments data guide manual Hitachi DSAUTAZ006 DO-35 land pattern Silicon Point Contact Mixer Diodes ED-7311
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001H 9th Edition March/2001 Semiconductor & Integrated Circuits Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher
|
Original
|
march/2001standard-856-8650pt740 abpm351+8transistor 9726 126edr-7313ed-7402texas instruments data guide manualhitachi dsautaz006do-35 land patternsilicon point contact mixer diodesed-7311
|
PDF
|
1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
|
Original
|
2sc5998c51392sc52472sc5907+162sd15042sj3612sk4392sk4942sk3349bcr5km-12l1002ds6020v4transistor bj 131-62sc 8550transistor 2sc1417hitachi 08122btransistor h9456030v42sc 805025aaj
|
PDF
|
2SK975 equivalent
Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC
|
OCR Scan
|
2sk11512sk11522sk18622sk1863+162sk11552sk11572sk13132sk13142sk15402sk15412sk975 equivalentk2796equivalent transistor 2skpower mos fet 2sj 2skmodel 2sk216transistor 2sk 1180sk16262sk215 equivalentdrum driver2sj44
|
PDF
|
5252 F 1108
Abstract: 4550J TO220FM 12015C 5252 F 1104 0345A msp18 E1113 K2613 SP1211
Contextual Info: B 2 S A series P 5 5 6 8 8 8 6 6 6 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 6 9 5 5 5 5 5 5 5 5 5 6 5 5 8 8 8 6 P*c*^aeoda TO-92 TO-92 TO-92 TO-126M TO-126M TO-126M TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
|
OCR Scan
|
o-126m12ifp-8da24sfc2025r+142026r2027r2029r2031t5252 f 11084550jto220fm12015c5252 f 11040345amsp18e1113k2613sp1211
|
PDF
|
2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
|
OCR Scan
|
o220fsp-10sp-12sp-12ta+111560d2sk1058 equivalentmbm300bs6hitachi mosfet2sk1270transistor 2sk 122sk16452sk975 equivalentequivalent transistor 2sk2sk1058 mosfet application notes2sc297
|
PDF
|
HA-1370 AUDIO AMPLIFIER
Abstract: HA1370 AUDIO AMPLIFIER HA1370 HA-1370 HA1370 amplifier HA1397 HA1370-HA1397 hitachi amplifier ha 6800 YC-40B HA1397 AUDIO AMPLIFIER
Contextual Info: HA1397 2 0 W Audio Power Amplifier The Hitachi B-class power amplifier HA1397 is specifically designed for Hi-Fi stereos, encapsulated in a high performance package. The HA1397, like HA1370, yields 20W typ of output power over the wide range from 20Hz to 20kHz at 1% total har
|
OCR Scan
|
ha1397ha137020khz20hzto+9120khzha-1370 audio amplifierha1370 audio amplifierha-1370ha1370 amplifierha1370-ha1397hitachi amplifier ha 6800yc-40bha1397 audio amplifier
|
PDF
|
4AM14
Abstract: Hitachi DSA00316
Contextual Info: 4AM14 Silicon N-Channel/P-Channel Complementary Power MOS FET Array ADE-208-1212 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.17 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –4 A
|
Original
|
4am14ade-208-1212sp-12tahitachi dsa00316 |
PDF
|
2SK2225
Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.
|
Original
|
pm50150k31max2sk22252sj150+82sk10582sk215 equivalent2sk135 application note2sk975 equivalent2sk24162sk135 audio application2sk135 audio amplifier2sk2225 equivalent
|
PDF
|
6AM15
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
6am15 |
PDF
|
Hitachi DSA001650
Contextual Info: 4AK23 Silicon N-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance RDS on ≤ 0.25 Ω, VGS = 10 V, ID = 2.5 A • Low drive current • High speed switching • High density mounting • Suitable for H-bridged motor driver
|
Original
|
4ak23sp-12tad-85622hitachi dsa001650 |
PDF
|
