Hitachi DSA002787
Contextual Info: 4AK23 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance RDS on ≤ 0.25 Ω, VGS = 10 V, ID = 2.5 A • • • • Low drive current High speed switching High density mounting Suitable for H-bridged motor driver
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4ak23hitachi dsa002787 |
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Contextual Info: 4AK23 Silicon N-Channel Power MOS FET Array HITACHI Application H igh speed pow er sw itching Features • Low on-resistance R DS on < 0.25 Vos = 10 V, I D = 2.5 A • Low drive current • H igh speed sw itching • H igh density m ounting • S uitable for H -bridged m otor driver
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4ak23 |
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Hitachi DSA001650
Contextual Info: 4AK23 Silicon N-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance RDS on ≤ 0.25 Ω, VGS = 10 V, ID = 2.5 A • Low drive current • High speed switching • High density mounting • Suitable for H-bridged motor driver
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4ak23sp-12tad-85622hitachi dsa001650 |
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SP-12TA
Abstract: Hitachi motor driver SP12TA 2SK1300 4AK23 DSA003646 Hitachi DSA003646
Contextual Info: 4AK23 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS on 0.25 , VGS = 10 V, I D = 2.5 A • Low drive current • High speed switching • High density mounting • Suitable for H-bridged motor driver
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4ak23sp-12tahitachi motor driversp12ta+32sk1300dsa003646hitachi dsa003646
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Contextual Info: 4AK23 Silicon N Channel Power MOS FET Array Application SP–12TA High speed power switching Features • Low on–resistance RDS on ≤ 0.25Ω, VGS = 10V, ID = 2.5A • Low drive current • High speed switching • High density mounting • Suitable for H–bridged motor driver
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4ak23 |
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Contextual Info: 4AK23 Silicon N-Channel Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • Low on-resistance RDS oli < 0.25 a V GS = 10 V, ID= 2.5 A • Low drive current • High speed switching • High density mounting • Suitable for H-bridged motor driver
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4ak232sk1300 |
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2SK1300
Abstract: 4AK23
Contextual Info: 4AK23 Silicon N Channel Power MOS FET Array Application SP–12TA High speed power switching Features • Low on–resistance RDS on ≤ 0.25Ω, VGS = 10V, ID = 2.5A • Low drive current • High speed switching • High density mounting • Suitable for H–bridged motor driver
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4ak232sk1300 |
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2SK1275
Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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10-pin12-pin4ak172sk972+134ak152sk9712sk12022sk12032sk12042sk6962sk12754am146am122sk9702sk9732sk9754ak16
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2SK1778
Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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10-pin12-pin4ak172sk972+144ak152sk9712sk16652sj2152sj2172sk13032sk17782sk12994am12transistor 2sk13042sj1774ak222sk1919transistor 2sk
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2sk 4207
Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9
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d-856222sk 42072sk1762sk975 equivalent+72sj1772sj318pm45502c2sk22252sk1058 2sj162pwm 100w audio amplifier2sk1336 equivalent
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ade-40850502capc ups es 500 circuit diagramsk 100 gale 065 tf+82sk1058 mosfet application notesapc ups circuit diagram es 725general instrument data book2sk2264esi 252 impedance metertransistor bf 175pf01442sk212
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FHX04FA
Abstract: 3SK71 FHR10X 3SK38 FHR01FH FHX05FA 3SK38A NEC 2501L 4AK15 4AK17
Contextual Info: - 130 - ft f m % tt m m € * 1 % K V* V, m * * tit /E Vg s * E % * (V (A) « » * P d /P c h (W) S (Ta=25,C ) 14 . Ig s s (max) (A) Vg s (V) (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) c (min) (typ) Vd s (S) (s) (V) Id (A) Id (A) Chop
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3sk383sk38a3sk714ak15+114ak164ak1760/115nstyp2sk971/2sj1736am13cxd7500mfhx04fafhr10xfhr01fhfhx05fanec 2501l
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2SK975 equivalent
Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC
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2sk11512sk11522sk18622sk1863+162sk11552sk11572sk13132sk13142sk15402sk15412sk975 equivalentk2796equivalent transistor 2skpower mos fet 2sj 2skmodel 2sk216transistor 2sk 1180sk16262sk215 equivalentdrum driver2sj44
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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o220fsp-10sp-12sp-12ta+111560d2sk1058 equivalentmbm300bs6hitachi mosfet2sk1270transistor 2sk 122sk16452sk975 equivalentequivalent transistor 2sk2sk1058 mosfet application notes2sc297
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2SK1778
Abstract: 2SK971 2SK970 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17 4AK18
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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10-pin12-pin4ak172sk972+124ak152sk9712sk16652sj2152sj2172sk13032sk17782sk9702sk9732sk9754ak164ak18
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2SH14
Abstract: 2SH21 2SH11 2SH19 2SK1056 6AM13 4AK19
Contextual Info: POWER MOS FET •G eneral amplifier Package code Type No. -tas 2SK1197 TO-3P 2SJ160 2SJ161 2SJ162 2SJ351 2SJ352 to Ratings Vos* j 10 Vosx (V)| «A) 100 1 0.5 -7 -120 -7 -140 -7 -160 -8 -180 -200 ! -8 Characteristics Mai ResfO» Ciss Status (S itili. <PF)«W>
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2sk11972sj1602sj1612sj162+122sj3512sj3522sk10562sk10872sk10582sk22202sh142sh212sh112sh196am134ak19
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lvc16244
Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List
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hd49323aha12134aha12141nha12155n+16ha12163ha12167fha12173ha12179fha12181fha12187flvc16244bc2402sk3174cbt1g125lv2gt14ahc32 hitachiha13557atransistor 2sc1162h8 hitachi programming manual30204sp
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hitachi j50
Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9
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d-85622hitachi j502sk1168ha16116 "cross reference+7transistor marking yb 826ade-408gg 84marking code n-channel mos field effect transistor2sk1058 2sj1622sj1772sj182 equivalent
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3sk3093sk3173sk318bb101c+16bb102cbb301cbb302cbb304cbb305cbb501c2sc 85506020v46030v4hitachi 08122b2sc 8050hitachi 08123btransistor h945h945transistor c 6030v42sk3545
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HITACHI Power MOSFET Arrays
Abstract: 2sk1299 2SK975 2sk1306 2SK1919 2SK970 2SK971 2SK972 2SK973 4AK15
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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10-pin12-pin4ak172sk972+94ak152sk971hitachi power mosfet arrays2sk12992sk9752sk13062sk19192sk9702sk973
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6AM12
Abstract: SP12TA 2sk970 SP12 PACKAGE TYPE 6 2SK971 4AK16 2SK972 2SK973 2SK97-1 4AK15
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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10-pin12-pin4ak172sk972+124ak152sk9712sk1254sp-126am112sk9706am12sp12tasp12 package type 64ak162sk9732sk97-1
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2SK1254
Abstract: 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully m oulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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10-pin12-pin4ak172sk972+84ak152sk9712sk12542sj1772sk9702sk9732sk9754ak16
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2SK2225 equivalent
Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 Recommended products in each power range Recommended Products in Each Power Range Type power supply Voltage Up to 10 w 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 100 V to 132 V AC □ 2SK1151 {3.5}
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2sk11512sk11522sk18622sk1863+162sk11552sk11562sk13132sk13142sk15402sk15412sk2225 equivalent2sk1762 equivalent2sk2221 equivalentc23732sk215 equivalent2sj182 equivalent2sk1317 equivalent2sk1336 equivalent2sk975 equivalent2sk1058 equivalent
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hitachi mosfet audio
Abstract: D4L DIODE 2SK2830 2SK2225 2SJ214LS 2SK1919LS 2sk2829 Hitachi MOSFET 2SK1058 transistors 2SK1317
Contextual Info: Power MOSFET Quick Reference Literature Order Number Revision Number Hitachi Semiconductor Author Name When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole
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o-220haf2001500pcsxno-92mod+16o-126modo-126fmo-220abo-220fmo-220csp-10hitachi mosfet audiod4l diode2sk28302sk22252sj214ls2sk1919ls2sk2829hitachi mosfet2sk1058transistors 2sk1317
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