SUB70N03 Search Results

Contextual Info: SPICE Device Model SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V D-S , 175°°C MOSFET PWM Optimized CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application

70821

Abstract: SUB70N03-09P SUB70N03-09
Contextual Info: SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "70a 0.015 @ VGS = 4.5 V "55 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09

S-20102

Abstract: SUB70N03-09BP SUP70N03-09BP MOSFET SUB70N03
Contextual Info: SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 70a 0.013 @ VGS = 4.5 V 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S

SUB70N03-09BP

Contextual Info: SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 70a 0.013 @ VGS = 4.5 V 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S

SUB70N03-09P

Abstract: 70604
Contextual Info: SUP/SUB70N03-09P VISHAY Vishay Siliconix Y N-Ch 30-V D-S , 175°C, MOSFET PWM Optimized New Product PRO DUCT SUM M ARY R o s (o m ) (£2) ID (A) 0.009 VG S = 10 V ±70* 0.015 © V q s » 4.5 V ±55 V (BR}DM M 30 D O TO-220AB o TO-263 ì I— w DRAIN connected to TAB

SUB70N03-09BP

Abstract: SUP70N03-09BP
Contextual Info: SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 70a 0.013 @ VGS = 4.5 V 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S

Contextual Info: SPICE Device Model SUP/SUB70N03-09BP Vishay Siliconix N-Channel 30-V D-S , 175°C MOSFET PWM Optimized CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "70a 0.015 @ VGS = 4.5 V "55 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09

SUB70N03-09P

Abstract: SUB70N03-09
Contextual Info: SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "70a 0.015 @ VGS = 4.5 V "55 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09

MOSFET SUB70N03

Abstract: SUB70N03-09BP SUB70N03-09BP SPICE Device Model
Contextual Info: SPICE Device Model SUP/SUB70N03-09BP Vishay Siliconix N-Channel 30-V D-S , 175°C MOSFET PWM Optimized CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application

Contextual Info: SPICE Device Model SUP/SUB70N03-09BP Vishay Siliconix N-Channel 30-V D-S , 175°C MOSFET PWM Optimized CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUP70N03-09BP

Abstract: SUB70N03-09BP
Contextual Info: SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 70a 0.013 @ VGS = 4.5 V 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S

sub70n03

Contextual Info: SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "70a 0.015 @ VGS = 4.5 V "55 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09

zener zp 278

Abstract: L6917B L6917BD L6917BDTR C11-C13 phase-2
Contextual Info: L6917B 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT TTL-COMPATIBLE 5 BIT PROGRAMMABLE

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

L6917B

Abstract: L6917BD L6917BDTR
Contextual Info: L6917B 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT TTL-COMPATIBLE 5 BIT PROGRAMMABLE

LX1684CD-TR

Abstract: LM78L05 LX1682 LX1684 LX1684CD vishay power pak SO-8 package dimension MBR2545
Contextual Info: LX1684 Voltage-Mode PWM Controller TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION ƒ Fixed 175kHz Switching Frequency ƒ Constant Frequency VoltageMode Control Requires No External Compensation ƒ Hiccup-Mode Over-Current Protection ƒ High Efficiency

Contextual Info: Not Recommended For New Design LX1684 Voltage-Mode PWM Controller TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION Current is sensed using the voltage drop across the RDS ON of the MOSFET this sensing is delayed for 1µs to eliminate MOSFET ringing errors.

sub70n03

Abstract: L6919C L6919CD L6919CDTR smd diode S4 6A
Contextual Info: L6919C 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER WITH DYNAMIC VID MANAGEMENT • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

smb stmicroelectronics cross reference

Abstract: L6917B L6917BD L6917BDTR diode zener smd sg 64 C5244 SMD diode sg 46
Contextual Info: L6917B 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT TTL-COMPATIBLE 5 BIT PROGRAMMABLE

CDH127

Abstract: 2SK2857 CRS02 IRF7313 TSSOP-16 XC9213 Transistor Mosfet N-Ch 30V
Contextual Info: Driver Transistor Built-In Synchronous Step-Down DC/DC Controller Ics Input Voltage : 25V XC9213 Series Preliminary May 20, 2003 Ver. 1 ! ! ! ! ! ! ! ! " APPLICATIONS Synchronous, Bootstrap Nch-Nch Drive Input Voltage Range : 2.5V ~ 25.0V Switching Frequency

Contextual Info: L6917B 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER • ■ ■ 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT TTL-COMPATIBLE 5 BIT PROGRAMMABLE OUTPUT COMPLIANT WITH VRM 9.0

snubber capacitor

Abstract: smb stmicroelectronics cross reference 1N4148TE 775 cpu connector SMD 1206 RESISTOR 100 OHMS smd 2a 3 PIN fet L6917B L6917BD L6917BDTR 20SA100M
Contextual Info: L6917B 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT TTL-COMPATIBLE 5 BIT PROGRAMMABLE OUTPUT COMPLIANT WITH VRM 9.0