SI1406 Search Results

Si1406DH

Contextual Info: Si1406DH New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.065 @ VGS = 4.5 V 3.9 0.075 @ VGS = 2.5 V 3.6 0.096 @ VGS = 1.8 V 3.2 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package

Si1406DH

Contextual Info: SPICE Device Model Si1406DH Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si1406DH Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = 4.5 V 3.9 D TrenchFETr Power MOSFETS D 1.8-V Rated D Thermally Enhanced SC-70 Package 20 0.075 @ VGS = 2.5 V 3.6 APPLICATIONS 0.096 @ VGS = 1.8 V

Contextual Info: Si1406DH Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.065 at VGS = 4.5 V 3.9 0.075 at VGS = 2.5 V 3.6 0.096 at VGS = 1.8 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated

part marking ab sc-70

Abstract: sot363 ON Marking DS
Contextual Info: Si1406DH Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.065 at VGS = 4.5 V 3.9 0.075 at VGS = 2.5 V 3.6 0.096 at VGS = 1.8 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated

Si1406DH

Contextual Info: SPICE Device Model Si1406DH Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1406DH

Contextual Info: Si1406DH Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = 4.5 V 3.9 D TrenchFETr Power MOSFETS D 1.8-V Rated D Thermally Enhanced SC-70 Package 20 0.075 @ VGS = 2.5 V 3.6 APPLICATIONS 0.096 @ VGS = 1.8 V

Contextual Info: Si1406DH Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.065 at VGS = 4.5 V 3.9 0.075 at VGS = 2.5 V 3.6 0.096 at VGS = 1.8 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated

Si1406DH

Abstract: si1406
Contextual Info: Si1406DH Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.065 at VGS = 4.5 V 3.9 0.075 at VGS = 2.5 V 3.6 0.096 at VGS = 1.8 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated

Si1406DH

Abstract: SI1406DH-T1 si1406
Contextual Info: Si1406DH Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = 4.5 V 3.9 D TrenchFETr Power MOSFETS D 1.8-V Rated D Thermally Enhanced SC-70 Package 20 0.075 @ VGS = 2.5 V 3.6 APPLICATIONS 0.096 @ VGS = 1.8 V

Si1406DH

Contextual Info: SPICE Device Model Si1406DH Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

AN609

Abstract: Si1406DH
Contextual Info: Si1406DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si1406BDH

Contextual Info: SPICE Device Model Si1406BDH Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

si1406

Abstract: part marking ab sc-70 SI1406DH-T1-E3
Contextual Info: Si1406DH Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.065 at VGS = 4.5 V 3.9 0.075 at VGS = 2.5 V 3.6 0.096 at VGS = 1.8 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated

C 3205

Abstract: rgb f13 tm 1618 LTC3202 LTC3205 LTC3205EUF MC68HC11 TA03 TA08 fb 3205
Contextual Info: LTC3205 Multidisplay LED Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Step-Up/Step-Down Fractional Charge Pump for Up to 92% Efficiency Independent Current and Dimming Control for 1-4 LED Main, 1-2 LED Sub and RGB LED Displays

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Contextual Info: LTC3205 Multidisplay LED Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Step-Up/Step-Down Fractional Charge Pump for Up to 92% Efficiency Independent Current and Dimming Control for 1-4 LED Main, 1-2 LED Sub and RGB LED Displays

bq40z50

Contextual Info: bq40z50 www.ti.com SLUSBS8 – DECEMBER 2013 1-Series, 2-Series, 3-Series, and 4-Series Li-Ion Battery Pack Manager Check for Samples: bq40z50 FEATURES APPLICATIONS • • • • 1 2 • • • • • • • • • • Fully Integrated 1-Series, 2-Series, 3-Series,

Contextual Info: SMB119 Preliminary Information Seven-Channel Programmable DC-DC Power Manager FEATURES & APPLICATIONS INTRODUCTION 2 • Digital programming of all major parameters via I C interface and non-volatile memory o Output voltage setpoint/margining o Sequencing & digital soft start

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

Applications of microcontrollers in aviation

Abstract: tft monitor schematic FDC6420 QFN-48 Si1406DH schematic diagram 48V zener D17
Contextual Info: SMB119 Seven-Channel Programmable DC-DC Power Manager FEATURES & APPLICATIONS INTRODUCTION 2 • Digital programming of all major parameters via I C interface and non-volatile memory o Output voltage setpoint/margining o Sequencing & digital soft start o Enable/Disable outputs independently

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

bq40z50

Contextual Info: bq40z50 www.ti.com SLUSBS8 – DECEMBER 2013 1-Series, 2-Series, 3-Series, and 4-Series Li-Ion Battery Pack Manager Check for Samples: bq40z50 FEATURES APPLICATIONS • • • • 1 2 • • • • • • • • • • Fully Integrated 1-Series, 2-Series, 3-Series,

SMB122N

Abstract: L7 diode QFN-64 thermistor R53 schematic diagram 48v battery charger lead QFN PACKAGE thermal resistance 12V to 42V hi amps dc dc converter step-up 12V to 48V hi amp dc to dc converter step-up FDC6420 TP1429
Contextual Info: SMB122/SMB122X Eight-Channel Programmable DC-DC Power Managers with Battery Charger FEATURES & APPLICATIONS INTRODUCTION 2 • Digital programming of all major parameters via I C interface and non-volatile memory o Output voltage setpoint/margining o Sequencing & digital soft start