Si6435DQ
Abstract: 2502P CBHK741B019 F63TNR FDW2502P
Contextual Info: Si6435DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage
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S-49534
Abstract: Si6435DQ
Contextual Info: Si6435DQ P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View
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Si64
Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94
Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S
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Si6435DQ siliconix
Abstract: Si6435DQ
Contextual Info: Si6435DQ Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -30 rDS(on) (W) ID (A) 0.040 @ VGS = -10 V "4.5 0.070 @ VGS = -4.5 V "3.4 S* TSSOPĆ8 D S S G 1 2 3 D 8 Si6435DQ 4 7 6 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common.
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Si4435DY
Abstract: Si4953DY Si6435DQ Si9430DY
Contextual Info: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S
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Si4435DY
Abstract: Si4953DY Si6435DQ Si9435DY
Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ
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Si6435DQ
Contextual Info: Si6435DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View
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Si9430DY
Abstract: Si4435DY Si4953DY Si6435DQ
Contextual Info: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ
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Si4435DY
Abstract: Si4953DY Si6435DQ Si9435DY
Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ
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Si4435DY
Abstract: Si4953DY Si6435DQ Si9430DY
Contextual Info: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S
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Si4435DY
Abstract: Si4953DY Si6435DQ Si9435DY 70513 51361
Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S
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S-49534
Abstract: Si6435DQ A244V SI6435
Contextual Info: Si6435DQ P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View
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mosfet Vds 30 Vgs 25
Abstract: Si6435DQ
Contextual Info: Si6435DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View
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5139 mosfet
Abstract: Si6435DQ
Contextual Info: Si6435DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View
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S14435
Abstract: S14435DY S1443 70513 51361
Contextual Info: Temic SÌ9435DY Semiconductors P-Channel Enhancement-Mode MOSFET P rod uct S u m m a r y V D S V -30 r DS(on) (£2) I d (A ) 0.055 @ VGs = -10 V ±5.1 0.07 @ VGs = -6 V ±4.6 0.105 @ V<3s = -4.5 V ±3.6 Recom m ended upgrade: S14435DY or Si4953D Y Lower pro file ¡smaller size see Si6435DQ
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Si6435DQ
Contextual Info: Si6435DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage
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mi4410
Abstract: MI4435 S39421 Si4431DY equivalent MI44 IRF7606 VME COnnector IRF7603 IRF7413 MMSF7N03HD
Contextual Info: Application Note 9 Using the S39421 as the Primary Control Circuit on a VME Live Insertion Card High availability is a key feature of many types of systems today. Whether the system is a central office switch, a private branch exchange or a server it is important the
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mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P
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VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated
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Siliconix
Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123
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2n70002n70022n7002e2n7002k+152sj5742sk3240bs170bsh108bss123bss138siliconixsiliconix mosfet guidesiliconix vn10kmpower mosfet cross reference guidefdc6323lfdn5618p2n7002 siliconixequivalent of bs170vn10km equivalent
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ltkd
Abstract: LTC1771EMS8 uu ferrite core LTC1771 LTC1771E LTC1771ES8 LTC1771I LTC1771IS8 Si6447DQ UPS5817
Contextual Info: Final Electrical Specifications LTC1771 Low Quiescent Current High Efficiency Step-Down DC/DC Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1771 is a high efficiency current mode stepdown DC/DC controller that draws as little as 10µA DC
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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P-channel power mosfet SO-8 30V 9.2A 20
Abstract: Siliconix 100v P-Channel DPAK P-channel power mosfet SO-8 P-CHANNEL 45A TO-247 POWER MOSFET P-channel N-Channel power mosfet SO-8 Vishay Siliconix IRF7606 D-PAK MTSF3N03HD
Contextual Info: Summit Microelectronics, Inc., 300 Orchard City Drive Campbell, CA 95008. Phone 408-378-6461 www.summitmicro.com Suggested Power MOSFET Switches for Hot-Swap Controller ICs Nov-99 N-Channel Part Number Manufacturer V BR DSS RDS(on) @ VGS=10V ID cont. @ 25°C
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S39421
Abstract: Hot Swap Controller hot swap motorola application note an-1 CR injector driver VME 5v 3.3v timing sequence
Contextual Info: SUMMIT S39421 MICROELECTRONICS, Inc. Hot Swap Voltage Controller FEATURES • Full Voltage Control for Hot Swap Applications – Card Insertion Detection – Platform Voltage Detection – Card Voltage Sequencing – 5 Volt, 12 Volt and 3.3 Volt • 12 Volt FET Enable Outputs
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