2502P Search Results

Contextual Info: * * * 2502 Series * * * * Insulator : UL 94V-0 NYLON 6/6 * Contact: Brass * Ordering Information: 2502PÍ_Í *000 RoHS COMPLIANT 1 2 1. NO. of circuits 2. Plating: 0=Tin plated 120u" min. over 30u"min. nickel overall U=Gold flash over 30u"min. nickel overall

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

2502P

Abstract: CBHK741B019 F63TNR FDW2502P SI6926DQ
Contextual Info: SI6926DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

FDW2501NZ

Abstract: 2501NZ DIODE marking S4 06 2502P CBHK741B019 F63TNR FDW2502P
Contextual Info: FDW2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

2506p

Abstract: diode s4 53a 2506p marking FDW2502P 2502P CBHK741B019 F63TNR FDW2506P
Contextual Info: FDW2506P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

2502P

Abstract: CBHK741B019 F63TNR FDW2502P FDW2507NZ
Contextual Info: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains

MOSFET TSSOP-8

Abstract: 2502P 2507N CBHK741B019 F63TNR FDW2502P FDW2507N Fairchild MOSFET TSSOP-8 dual n-channel
Contextual Info: FDW2507N Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains

DIODE S4 75a

Contextual Info: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-2500P-1C ADBD-2500P-1C 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES SERIES: DB2500P - DB2510P and ADB2504P - ADB2508P Suffix "P" indicates molded PLASTIC with integrally mounted Heat Sink

DALLAS 2501

Abstract: DALLAS SEMICONDUCTOR 2501 dallas 2502
Contextual Info: DS2501-UNW /DS2505-UNW DALLAS SEMICONDUCTOR DS2501-U NW/DS2502-U NW UniqueWare Add Only Memory SPECIAL FEATURES • 512 bits D S2501-U N W or 1024 bits (D S 2502-U N W ) Electrically Program mable Read Only M em ory (EPROM ) com m unicates with the econom y of one sig ­

Contextual Info: 2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

Si6435DQ

Abstract: 2502P CBHK741B019 F63TNR FDW2502P
Contextual Info: Si6435DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage

FDW2502P

Abstract: 2502P CBHK741B019 F63TNR FDW252P
Contextual Info: FDW252P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

2506P

Abstract: 2508P db250 SDB250 ADB2504P ADB2508P DB2500P DB2510P 2504P
Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-2500P-1C ADBD-2500P-1C 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES SERIES: DB2500P - DB2510P and ADB2504P - ADB2508P VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM

2502P

Abstract: FDW2502P
Contextual Info: 2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

FDW2502PZ

Contextual Info: 2502PZ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-2500P-1C ADBD-2500P-1C 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES SERIES: DB2500P - DB2510P and ADB2504P - ADB2508P VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM

2502P

Abstract: FDW2502P
Contextual Info: 2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

7400 fan-out

Abstract: 7400 signetics AM2504 AM2504PC AM25L04FM D-16 P-24 TTL 7400 propagation delay AM2504DC
Contextual Info: Am2502/3/4 Family E ig h t-B it/T w e lv e -B it S u c c e s s iv e A p proxim atio n R eg is ters Distinctive Characteristics • • • • C o n ta in s all th e storage and c o n tro l f o r successive a p p r o x im a tio n A -to -D converters. Provision fo r register e x te n s io n o r tru n c a tio n .

DIODE marking S4 06

Abstract: MOSFET TSSOP-8 S4 DIODE schottky 2502P CBHK741B019 F63TNR FDW2502P FDW6923
Contextual Info: FDW6923 P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the

2502P

Abstract: CBHK741B019 F63TNR FDW2502P SI6966DQ Diode S4 55a
Contextual Info: SI6966DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

Contextual Info: 2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. FRDB-2500P-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES SERIES FDB2500P - FDB2510P PRV Ratings from 50 to 1000 Volts Suffix "P" indicates molded PLASTIC with intergrally mounted Heat Sink

2502P

Abstract: FDW2502P
Contextual Info: 2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate