SI4463 Search Results

NS4160

Abstract: Si4463DY 4463 SO-8 4463 SO8 MOSFET
Contextual Info: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .

4463 SO8 MOSFET

Abstract: 4463 B
Contextual Info: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .

Contextual Info: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

95-4066

Abstract: 3335 9828 AN609 Si4463BDY 69005
Contextual Info: Si4463BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4463DY

Abstract: 70707
Contextual Info: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: SPICE Device Model Si4463CDY www.vishay.com Vishay Siliconix P-Channel 2.5 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si4463BDY

Abstract: Si4463BDY-T1-E3
Contextual Info: New Product Si4463BDY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.011 at VGS = - 10 V - 13.7 0.014 at VGS = - 4.5 V - 12.3 0.020 at VGS = - 2.5 V - 10.3 RoHS COMPLIANT S SO-8 S 1 8 D S 2 7 D S 3 6 D 5 D

Contextual Info: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.014 @ VGS = −4.5 V −13 0.020 @ VGS = −2.5 V −11 D Lead (Pb)-Free Version is RoHS Compliant Available S SO-8 S 1 8 D S 2 7 D S 3 6 D G

PF7000

Contextual Info: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

SI4463BDY

Contextual Info: Si4463BDY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.011 @ VGS = −10 V −13.7 0.014 @ VGS = −4.5 V −12.3 0.020 @ VGS = −2.5 V −10.3 −20 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View

Si4463BDY

Contextual Info: SPICE Device Model Si4463BDY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: AN648 Si4063/Si4463/64 TX M ATCHING 1. Introduction This application note describes the matching methods for the TX Power Amplifier PA on the Si4063/Si4463/64 RFICs. This document does not address the matching procedure for the PA on the Si4060/Si4460/61 RFICs. Since

Si4463BDY-E3

Abstract: Si4463BDY
Contextual Info: Si4463BDY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.011 @ VGS = −10 V −13.7 0.014 @ VGS = −4.5 V −12.3 0.020 @ VGS = −2.5 V −10.3 −20 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View

Si4463DY

Contextual Info: Si4463DY Vishay Siliconix P-Channel 2.5-V G–S MOSFET PRODUCT SUMMARY VDS (V) RDS(ON) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si4463DY

Contextual Info: Si4463DY New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.014 @ VGS = - 4.5 V - 13 0.020 @ VGS = - 2.5 V - 11 - 20 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si4463CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: SPICE Device Model Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SI4463

Abstract: SI4463CDY
Contextual Info: New Product Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.008 at VGS = - 10 V - 18.6 0.010 at VGS = - 4.5 V - 16.6 0.014 at VGS = - 2.5 V - 14 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21

Si4463DY

Abstract: 52525rev Si4463DY SPICE Device Model
Contextual Info: SPICE Device Model Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4463BDY Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.011 at VGS = - 10 V - 13.7 - 20 0.014 at VGS = - 4.5 V - 12.3 0.020 at VGS = - 2.5 V - 10.3 • Halogen-free According to IEC 61249-2-21 Available

Si4463DY

Abstract: Si4463DY-T1 SI4463DY-T1-E3
Contextual Info: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.014 @ VGS = −4.5 V −13 0.020 @ VGS = −2.5 V −11 D Lead (Pb)-Free Version is RoHS Compliant Available S SO-8 S 1 8 D S 2 7 D S 3 6 D G

Si4463DY

Contextual Info: SPICE Device Model Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI4463DY-T1

Contextual Info: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.014 @ VGS = - 4.5 V - 13 0.020 @ VGS = - 2.5 V - 11 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4463DY Si4463DY-T1 (with Tape and Reel)

Contextual Info: New Product Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.008 at VGS = - 10 V - 18.6 0.010 at VGS = - 4.5 V - 16.6 0.014 at VGS = - 2.5 V - 14 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21