SI4463CDY Search Results

Contextual Info: SPICE Device Model Si4463CDY www.vishay.com Vishay Siliconix P-Channel 2.5 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si4463CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: SPICE Device Model Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SI4463

Abstract: SI4463CDY
Contextual Info: New Product Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.008 at VGS = - 10 V - 18.6 0.010 at VGS = - 4.5 V - 16.6 0.014 at VGS = - 2.5 V - 14 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.008 at VGS = - 10 V - 18.6 0.010 at VGS = - 4.5 V - 16.6 0.014 at VGS = - 2.5 V - 14 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21

Si4463BDY-T1-GE3

Contextual Info: Specification Comparison Vishay Siliconix Si4463CDY vs. Si4463BDY Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4463CDY-T1-GE3 replaces Si4463BDY-T1-GE3 Si4463CDY-T1-GE3 replaces Si4463BDY-T1-E3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Contextual Info: New Product Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.008 at VGS = - 10 V - 18.6 0.010 at VGS = - 4.5 V - 16.6 0.014 at VGS = - 2.5 V - 14 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product Si4463CDY Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.008 at VGS = - 10 V - 18.6 0.010 at VGS = - 4.5 V - 16.6 0.014 at VGS = - 2.5 V - 14 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®