SI8901 Search Results

7009 A 8290

Abstract: SI8901 AN609 Si8901EDB
Contextual Info: Si8901EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SI8901EDB

Contextual Info: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET

si8900

Abstract: AN-635
Contextual Info: Si8900/1/2 I SOLA TED M ONITORING ADC Features   ADC 3  input channels 10-bit resolution 2 µs conversion time  Isolated serial I/O port  UART I  2 Si8900 C/SMbus (Si8901) MHz SPI port (Si8902)  2.5

Contextual Info: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET

Contextual Info: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET

Contextual Info: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET

SI8901

Abstract: J-STD-020A Si8901EDB
Contextual Info: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET

top 8901

Abstract: SI8901 J-STD-020A
Contextual Info: Si8901DB New Product Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area, Profile (0.65 mm) and On-Resistance Per Footprint Area PRODUCT SUMMARY

Bi-Directional P-Channel

Abstract: SI8901 Si8901EDB Bi-Directional P-Channel mosfet
Contextual Info: SPICE Device Model Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Bi-Directional P-Channel mosfet

Abstract: SI8901 Si8901EDB
Contextual Info: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET

7133 A-1

Abstract: 7636 SI8901 AN609
Contextual Info: Si8901DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SI8902

Abstract: SI8902D-A01-GS si8901
Contextual Info: Si8900/1/2 I SOLA TED M ONITORING ADC Features   ADC 3  input channels 10-bit resolution 2 µs conversion time  Isolated serial I/O port  UART I  2 Si8900 C/SMbus (Si8901) MHz SPI port (Si8902)  2.5

top 8901

Abstract: SI8901 bi 370 transistor Bi-Directional P-Channel mosfet J-STD-020A
Contextual Info: Si8901DB New Product Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area, Profile (0.65 mm) and On-Resistance Per Footprint Area PRODUCT SUMMARY

top 8901

Contextual Info: Si8901DB New Product Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area, Profile (0.65 mm) and On-Resistance Per Footprint Area PRODUCT SUMMARY

Bi-Directional P-Channel mosfet

Abstract: SI8901 Si8901EDB
Contextual Info: SPICE Device Model Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI8901

Contextual Info: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET

SI8901A

Abstract: SILICONIX Si8901 SI8901 top 8901 SI8901CY TL3001
Contextual Info: CTSiliconix Si8901 SERIES .^dm in c o r p o r a te d D M O S D o u b le -B a la n c e d M ix e rs T h e Si8901 Ring D e m o d u la to r/B a la n c e d M ixer o ffe rs s ig n ific a n t im p ro v e m e n ts fo r RF m ix e r a p p lic a tio n w h e re low th ird o rd e r h a rm o n ic d is to rtio n ha s b e e n

SI8901

Abstract: J-STD-020A Si8901EDB MARKING G2
Contextual Info: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET

SI8901

Abstract: Si8901EDB
Contextual Info: SPICE Device Model Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SMD resistors 1806

Abstract: SMD zener diode 202 1N4148WS
Contextual Info: Cell-phone Table of Contents AUDIO, Audio Control. 3 AUDIO, Earpiece. 5

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

SI-8100D

Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,

Contextual Info: Si890x-PWR-EVB S i890 X D I G I TA L I SOLATOR - B ASED , 1 0 - B IT I SOLATED M ONITORING ADC U SER ’ S G UIDE 1. Introduction The Si890x are isolated ADCs suitable for low-frequency analog data acquisition applications. These devices integrate an isolated 10-bit SAR ADC with I2C, UART, or SPI serial communication ports. Isolation ratings of 2.5 or