8901E Search Results

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Part	ECAD Model	Manufacturer	Description	Download	Buy
8408901EA		Texas Instruments	Quadruple D-type Flip-Flops With Clear 16-CDIP -55 to 125

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Texas Instruments TPS7A8901EVM-853 EVAL BOARD FOR TPS7A89
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TPS7A8901EVM-853	Bulk	1		1	1 $34.80 10 $34.80 100 $34.80 1000 $34.80 10000 $34.80	Buy Now
Mouser Electronics	TPS7A8901EVM-853					1 $34.81 10 $34.81 100 $34.81 1000 $34.81 10000 $34.81	Get Quote
Texas Instruments 8408901EA IC FF D-TYPE SINGLE 4BIT 16CDIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	8408901EA	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	8408901EA		1,644			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Tripp Lite SB58901EFB MOTORS & SOLENIODS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SB58901EFB	Bulk			1	1 $143.42 10 $143.42 100 $143.42 1000 $143.42 10000 $143.42	Buy Now
Tripp Lite SB58901ETG MOTORS & SOLENIODS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SB58901ETG	Bulk			1	1 $143.42 10 $143.42 100 $143.42 1000 $143.42 10000 $143.42	Buy Now
Tripp Lite SB58901EAL MOTORS & SOLENIODS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SB58901EAL	Bulk			1	1 $141.53 10 $141.53 100 $141.53 1000 $141.53 10000 $141.53	Buy Now

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8901E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SI8901EDB Contextual Info: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET	Original	Si8901EDB 8901E 8901E Si8901EDB-T2Note 63Sn/37Pb S-40852--Rev. 03-May-04	PDF
Contextual Info: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET	Original	Si8901EDB 8901E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET	Original	Si8901EDB 8901E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET	Original	Si8901EDB 8901E Si8901EDB-T2-E1 11-Mar-11	PDF
SI8901 Abstract: J-STD-020A Si8901EDB Contextual Info: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET	Original	Si8901EDB 8901E S-50066--Rev. 17-Jan-05 SI8901 J-STD-020A	PDF
Bi-Directional P-Channel mosfet Abstract: SI8901 Si8901EDB Contextual Info: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET	Original	Si8901EDB 8901E 18-Jul-08 Bi-Directional P-Channel mosfet SI8901	PDF
SI8901 Contextual Info: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET	Original	Si8901EDB 8901E Si8901EDB-T2-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI8901	PDF
SI8901 Abstract: J-STD-020A Si8901EDB MARKING G2 Contextual Info: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET	Original	Si8901EDB 8901E 08-Apr-05 SI8901 J-STD-020A MARKING G2	PDF