8901E Search Results
8901E Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 8408901EA | Texas Instruments | Quadruple D-type Flip-Flops With Clear 16-CDIP -55 to 125 |
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8901E Price and Stock
Eaton Corporation T0-3-8901/EA/SVBSwitch: cam switch; Stabl.pos: 2; 20A; OFF-ON; for building in |
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T0-3-8901/EA/SVB | 1 |
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Eaton Corporation T3-3-8901/ESwitch: cam switch; Stabl.pos: 2; 32A; 0-1; for building in; Pos: 2 |
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T3-3-8901/E | 1 |
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Eaton Corporation T0-3-8901/EZSwitch: cam switch; Stabl.pos: 2; 20A; 0-1; for building in; Pos: 2 |
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T0-3-8901/EZ | 1 |
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Eaton Corporation T5B-3-8901/EA/SVB-SWSwitch: cam switch; Stabl.pos: 2; 63A; OFF-ON; for building in |
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T5B-3-8901/EA/SVB-SW | 1 |
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Get Quote | |||||||
Eaton Corporation T0-3-8901/ESwitch: cam switch; Stabl.pos: 2; 20A; 0-1; for building in; Pos: 2 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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T0-3-8901/E | 1 |
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8901E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SI8901EDBContextual Info: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET |
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si8901edb8901esi8901edb-t2note63sn/37pb+2 | |
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Contextual Info: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET |
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si8901edb8901e2002/95/ec2011/65/eu+2 | |
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Contextual Info: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET |
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si8901edb8901e2011/65/eu2002/95/ec+1 | |
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Contextual Info: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET |
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si8901edb8901esi8901edb-t2-e111-mar-11 | |
SI8901
Abstract: J-STD-020A Si8901EDB
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si8901edb8901es-50066--rev17-jan-05+2 | |
Bi-Directional P-Channel mosfet
Abstract: SI8901 Si8901EDB
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si8901edb8901e18-jul-08bi-directional p-channel mosfet+1 | |
SI8901Contextual Info: 8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET |
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si8901edb8901esi8901edb-t2-e12011/65/eu+3 | |
SI8901
Abstract: J-STD-020A Si8901EDB MARKING G2
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si8901edb8901e08-apr-05si8901+2 |