SI3831DV Search Results

Bi-Directional P-Channel mosfet

Abstract: Si3831DV mosfet 23 Tsop-6
Contextual Info: Si3831DV Vishay Siliconix Bi-Directional P-Channel MOSFET/Power Switch PRODUCT SUMMARY VDS V "7 rDS(on) (W) ID (A) 0.170 @ VGS = –4.5 V "2.4 0.240 @ VGS = –2.5 V "2.0 FEATURES D D D D D Solution for High-Side Battery Disconnect Switching (BDS) D Supports Battery Switching in Multiple Battery Cell

Contextual Info: Si3831DV Vishay Siliconix Bi-Directional P-Channel MOSFET/Power Switch PRODUCT SUMMARY VDS V "7 rDS(on) (W) ID (A) 0.170 @ VGS = –4.5 V "2.4 0.240 @ VGS = –2.5 V "2.0 FEATURES D D D D D Solution for High-Side Battery Disconnect Switching (BDS) D Supports Battery Switching in Multiple Battery Cell

Contextual Info: Si3831DV Vishay Siliconix Bi-Directional P-Channel MOSFET/Power Switch FEATURES PRODUCT SUMMARY VDS V ±7 RDS(on) (Ω) ID (A) 0.170 at VGS = - 4.5 V ± 2.4 0.240 at VGS = - 2.5 V ± 2.0 DESCRIPTION The Si3831DV is a low on-resistance p-channel power MOSFET providing bi-directional blocking and conduction.

Si3831DV

Abstract: Bi-Directional P-Channel mosfet
Contextual Info: Si3831DV Vishay Siliconix Bi-Directional P-Channel MOSFET/Power Switch FEATURES PRODUCT SUMMARY VDS V ±7 RDS(on) (Ω) ID (A) 0.170 at VGS = - 4.5 V ± 2.4 0.240 at VGS = - 2.5 V ± 2.0 DESCRIPTION The Si3831DV is a low on-resistance p-channel power MOSFET providing bi-directional blocking and conduction.

Bi-Directional P-Channel mosfet

Abstract: Si3831DV
Contextual Info: Si3831DV Vishay Siliconix Bi-Directional P-Channel MOSFET/Power Switch PRODUCT SUMMARY VDS V "7 rDS(on) (W) ID (A) 0.170 @ VGS = –4.5 V "2.4 0.240 @ VGS = –2.5 V "2.0 FEATURES D D D D D Solution for High-Side Battery Disconnect Switching (BDS) D Supports Battery Switching in Multiple Battery Cell

AN609

Abstract: Si3831DV
Contextual Info: Si3831DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

si3831

Abstract: Si3831DV Bi-Directional P-Channel mosfet
Contextual Info: Si3831DV Vishay Siliconix Bi-Directional P-Channel MOSFET/Power Switch FEATURES PRODUCT SUMMARY VDS V ±7 RDS(on) (Ω) ID (A) 0.170 at VGS = - 4.5 V ± 2.4 0.240 at VGS = - 2.5 V ± 2.0 DESCRIPTION The Si3831DV is a low on-resistance p-channel power MOSFET providing bi-directional blocking and conduction.

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

Contextual Info: SÌ3831DV VISHAY Vishay Siliconix Bi-Directional P-Ch MOSFET/Power Switch New Product PRODUCT SUM M ARY V ds V r DS (O N) (-2) Id (A) 0 .1 7 0 @ V GS = —4 .5 V ± 2 .4 0 .2 4 0 @ V GS = - 2 . 5 V ± 2 .0 & ±7 FEATURES • L o w rDS(on) S y m m e tric a l P -C h a n n e l M O S F E T