SI3831DV_ Search Results

AN609

Abstract: Si3831DV
Contextual Info: Si3831DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: SÌ3831DV VISHAY Vishay Siliconix Bi-Directional P-Ch MOSFET/Power Switch New Product PRODUCT SUM M ARY V ds V r DS (O N) (-2) Id (A) 0 .1 7 0 @ V GS = —4 .5 V ± 2 .4 0 .2 4 0 @ V GS = - 2 . 5 V ± 2 .0 & ±7 FEATURES • L o w rDS(on) S y m m e tric a l P -C h a n n e l M O S F E T