NDH8301N Search Results
NDH8301N Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| NDH8301N | Fairchild Semiconductor | Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 213.61KB | 10 | ||
| NDH8301N | National Semiconductor | Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 52.49KB | 2 | ||
| NDH8301N | National Semiconductor | Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 192.73KB | 6 | ||
| NDH8301N | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| NDH8301N | National Semiconductor | Dual N-Channel Enhancement Mode Field Effect Transistor | Scan | 294.29KB | 6 |
NDH8301N Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
NDH8301NContextual Info: N May 1996 ADVANCE INFORMATION NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. |
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ndh8301n135oc/w0025in2 | |
CBVK741B019
Abstract: F63TNR F852 FDR835N NDH8301N
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ndh8301ncbvk741b019f63tnrf852+1 | |
NDH8301NContextual Info: & N at i o n a l June 1996 Semiconductor" ADVANCE INFORMATION NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m od e pow er field effect transistors are produced using N ationals proprietary, high cell density, DMOS technology. |
OCR Scan |
ndh8301n0025in2300psb50113d | |
NDH8301NContextual Info: December 1996 NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is |
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ndh8301n | |
h830Contextual Info: FAIRCHILD Decem ber 1996 SEM IC O N D U C TO R t m NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell |
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ndh8301nh830 | |
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Contextual Info: National Semiconductor December 1996 NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. |
OCR Scan |
ndh8301n | |
NDH8301NContextual Info: N December 1996 NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored |
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ndh8301n | |
mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
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2n7000irf7203fds9435a2n7002+14 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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5ke100a5ke100ca5ke10a5ke10ca+16 | |
NDT453N
Abstract: H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N
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OCR Scan |
t-223ndc631nfdc6303nfdc6301n+11 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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2n70002n70022sj3772sj378+16 | |
ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
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f-91742ss8050 d 331tip122 tip127 mosfet audio ampksd180+7 |