2N4256 Search Results

2N5309

Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN

2N5306 equivalent

Abstract: ATI 200M D39C4 GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN

LG 631 IC

Abstract: 2N4256 ic lg 631
Contextual Info: DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4256 type is a Silicon NPN Planar Epitaxial Transistor designed fo r low level medium speed switching applications. MAXIMUM RATINGS Ta = 25°C SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

2N4424

Abstract: D39C4 quan-tech GES6220 2N4256 2N4425 2N5174 2N5232 2N5232A 2N5249A
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN 40

2N5232

Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232A 2N5249A 2N5305 2N5306 2N5309
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 P A C K A G E Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN

2N4256

Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVC e o @ 10mA V hF E Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN

2N3901

Abstract: 2N5356 GES93 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVC eo @ 10mA V h FE Min.-Max. @ IC,V C E (V> (V) Max. Typical (MHz) Ccb@10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN

D39C4

Abstract: GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BV C e o @ 10mA V hF E fT V CE(SAT) Min.-Max. @ IC,V C E (V> (V) Max. l c . *B Typical (MHz) Ccb@10V 1 MHz Typical (Pf) PT @ 25° C (mW) 2N4256 2N4424 2N4425 NPN NPN NPN 40

D29E9...10

Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVC eo @ 10mA V h FE fT V C E (S A T ) Min.-Max. @ IC,V C E (V> (V) Max. l c . *B PT Typical (MHz) Ccb@10V 1 MHz Typical (Pf) @ 25° C (mW) 2N4256 2N4424 2N4425 NPN NPN NPN

2N4256

Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V h FE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

GE SC160B triac

Abstract: SC160B 3kw triac H11AG1 H11AG2 gemov relay 12v 100A C2079 H11AG3 ST2122
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 PACKAGE DIMENSIONS DESCRIPTION The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of high current transfer ratio

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

ST-2124

Abstract: ST2122 varistor xf 040 SC160B 3kw triac GE SC160B triac C2079 varistor xf H11AG1 H11AG2
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS ft The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

1N148 diode

Abstract: 2N4256 1N148 H11AG1 H11AG h11ag3 SC160B H11AG2 IC 4093 BE IC 4093
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS H11AG1 H11AG2 H11AG3 DESCRIPTION The H11AG series consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

ST2122

Abstract: H11AG1 H11AG2 H11AG3 GE-MOV 2N4256 C2079 gemov SC160B
Contextual Info: PHOTOTRANSiSTOR OPTOCOUPLERS DPTDELECTBflKICS ._ H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS •The H11AG series consists of a galiium-aluminumarsenide infrared emitting diode coupled with a silicon photoiransistor in a dual in-tine package. This device

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

BF394 MOTOROLA

Abstract: 2SC733 LOW-POWER SILICON NPN 2N542 S8GD BF215 BF226 BFW29 2SC733/G
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 2N3845 2N3845A 2N3855A 2S0654 TEC80130 TEC80130 2SC828 BF394 BF3950 2N1278 ~~~~~9 15 20 BF238 BF215 BF215 BF226 BF226 NR4210S NR421FS 2SC733 ~~g~~~ 25 30 BFW29 BFW29 BFW29 2SC367G 2SC504 2SC504 2SC504 2SC509G

Contextual Info: _ 3B69720 GENERAL DIODE CORP _ 07C00256 D -r . y t GENERAL DIODE CORP □? D E ^ 3 0 ^ 7 2 0 000055b 1 | SILICON PNP - Power Transistors TYPE MO. MAX. COLL. H MAX. EHSS. A THERMAL X. M RES. Fim iM Ctm i T A» te C m #25* C E M rtyw

TZ82

Abstract: TZ-81 2N4275 TZ-82 2N5134 2N3646 TZ582 TZ-581 2N4256 MPS404
Contextual Info: ^ Econoline" Plastic-Molded K H WWC Silicon SEPT" Transistors SWITCHES >- ce. < o o. T y p e No. D-C C U R R E N T G A IN h FE Pd = 25 C V (BR) V (BR) V (BR) ICBO CBO CEO EBO nA (mW) V o lts V o lts V o lts M ax. ta Conditions L im its lc (m A ) V CE V o lts

2N4256

Abstract: 2N4425 NPN, PNP for 500ma, 30v 2b0-b 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5305
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N 4256 2N4424 2N 4425 N PN NPN

2N3856

Abstract: 2N3403 2N4256 2N3405 2N4425 2N4424 2N2926 029e1 2N5356 2N6000
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA PNP NPN pn p GET3014 GET3S3B GET3638A GET3638 GET3638A