BOXT9477 Search Results

Contextual Info: ¿¿F” MPSA12 1 The M PSA12 i s d e s ig n e d r e q u ir in g fo r NPN s i l i c o n p r e a m p lifie r in p u t im p e d an ce d a r lin g t o n in p u t of NPN S IL IC O N DARLINGTON TRAN SISTO R TO-92 tr a n s is to r a p p lic a tio n s s e v e r a l megohms.

BF397

Contextual Info: BF397 SSî! WíSs. PNP SILICON TRANSISTOR T O -9 2 F BF397 is PNP silicon transistor designed for high voltage applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage VCBO 90V VCEO 90V 6V 625mW 100mA VE BO Ptot Emitter-Base Voltage

Contextual Info: PN2483, PN2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES APPLICATIONS • High Breakdown Voltage BV^-gg . . . 6 0 V • Low Level, 'Low Noise Am plifier • High Gain hpg . . . 2 0 0 @ 500m>A ■ Audio Through High Frequency Ranges • Low Noise N.F. . . . 3 dB

Contextual Info: M BF397 PNP SILICON TRANSISTOR T O -9 2 F BF397 is PNP silicon transistor designed for high voltage applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage VCBO 90V VCEO 90V 6V 625mW 100mA VE BO Ptot Emitter-Base Voltage Total Power Dissipation

Contextual Info: PN2483, PN2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES APPLICATIONS • High Breakdown Voltage BV^-^q . . . 6 0 V • Low Level, 'Low Noise Amplifier • High Gain hpg . . . 2 0 0 @ 500m>A MECHANICAL OUTLINE TO-92A ■ Audio Through High Frequency Ranges

Contextual Info: BFX85 NPN SILICON TRANSISTOR TO-39 The BFX85 is NPN silicon planar epitaxial transistor designed for medium power amplifiers and switching applications where high voltage and high current are required. ciUKJ in ABSOLUTE MAXIMUM RATINGS 100V 60V 6V 1A 800mW

bc536

Abstract: bc537
Contextual Info: BC 537 • BC 538 NPN SILICON AF MEDIUM POWER TRANSISTORS -s- -i 4; jé . THE BC537» BC538 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC537, BC538 ARE COM­ PLEMENTARY TO THE PNP TYPE BC527, BC528

2N2222

Abstract: FN2222 2n2222 micro electronics pn2222 2n2222 FN2222A PN2222A le tr 2n2222 PN2907 T092 2N2222-PN2222
Contextual Info: THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY. THE 2N2222, 2N2222A ARE PACKED IN TO-18.

E3510

Abstract: N248 30MHZ PN2483 PN2484
Contextual Info: PN2483, PN2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES A P PLICA TIO N S • High Breakdown Voltage BV^-gQ . . . 60V • Low Level,'Low Noise Amplifier • High Gain hpg . . . 2 0 0 @ 500m>A ■ Audio Through High Frequency Ranges • Low Noise N.F. . . . 3 dB

Contextual Info: PN3641 PN3642 PN3643 NPN SILICON TRANSISTORS TO-92A PN3641, PN3642 & PN3643 are NPN silicon planar transistors designed for small signal general purpose amplifiers and switches. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage

BC537

Abstract: BC538 BC527 BC528
Contextual Info: BC 537 • BC 538 NPN SILICON AF MEDIUM POWER TRANSISTORS THE BC537, BC538 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC537, BC538 ARE COM­ PLEMENTARY TO THE PNP TYPE BC527, BC528

100khz 5v transistor npn

Abstract: MPSA12
Contextual Info: NPN S IL IC O N DARLINGTON TRAN SISTO R The M PSA12 i s d e s ig n e d r e q u ir in g fo r NPN s i l i c o n p r e a m p lifie r in p u t im p e d an ce d a r lin g t o n in p u t of TO-92 tr a n s is to r a p p lic a tio n s s e v e r a l megohms. ABSO LU TE MAXIMUM RATIN GS