N248 Search Results

MN2488 equivalent

Abstract: MN2488 transistors MN2488 sanken power transistor MN2488 mn2488 transistor MN2488 transistor equivalent sanken lot number sanken power transistor MICA-14 G746
Contextual Info: SünñR pñ SPE C IFIC A TIO N S pp A SANKEN ELECTRIC CGMPANY, LTD. DEVICE TYPE NAME 3 ^ 7 - m n2488 SANKEN MOLD TYPE SILICON POWER TRANSISTOR N2488 1. mmwm Scope a }• 7 "s 7s & M N 2488 The present specifications shall apply to Sanken silicon power transistor type N2488.

C 2851 transistor

Abstract: 2SC4428 2851 transistor npn
Contextual Info: Ordering number: EN 2851 _ 2 S C 4 4 2 8 No.2851 N P N Triple Diffused Plan ar Silicon Transistor Sw itching R egulator Applications F eatu res . High breakdown voltage, high reliability •Fast switching speed tf: O.lps typ •W ide A SO •Adoption of M B IT process

Contextual Info: 3.0 Am p MINIATURE PLASTIC SILICON RECTIFIERS D ata Sheet BY251 miconductor Features • LOW COST ■ DIFFUSED JUNCTION ■ HIGH CURRENT CAPABILITY E le c t r ic a l C h a r a c t e r is t ic s @ 2 5 *C . ■ M EETS UL SPECIFICATION 94V-0 Units B Y 2 5 1 . . . 2 5 5 S e r ie s

LA7938

Abstract: ALL SAT TUNER
Contextual Info: Ordering number : EN 2843 M onolithic Linear 1C LA7938 No.2843 Electronic Channel Select System Control Circuit for TV/VCR Use O v erv iew The Sanyo LA7938 Monolithic L inear TV/VCR Electronic T uner System C ontroller IC in teg rates all the peripheral circuitry for a TV or VTR tuner, w ith the exception of the m icrocontroller, into a single

Contextual Info: 550 mA HIGH VOLTAGE MICROWAVE OVEN RECTIFIERS Mechanical Dimelisions .285? 1 ,1.00 Mii^ - .866->| ^.050 _L t Features • HIGH OVERLOAD SURGE CAPABILITY ■ TYPICAL lB < IpA ■ COHTROLLED AVALANCHE CHARACTERISTICS ■ HIGH TEMPERATURE SOLDERING 250°C 10 Seconds

Contextual Info: 10 to15 Amp D ata Sheet SIN G LE PHASE SILICO N BRIDGE Description Mechanical Dimensions K < * o Features • BUILT-IN INTEGRAL HEAT SIN K ■ UP TO 300 AMP SURGE OVERLOAD RATING B ^ UL RECOGNITION AVAILABLE ■ SMALL PACKAGE Electrical Characteristics @25°C.

Contextual Info: C l Semiconductor Data Sheet 1 W att ZENER DIODES (& 3V to 100V Mechanical Dimensions JEDEC DO-41 i * T .0801 205 .160 t . 1.00 M in. * _L 1 t Features • WIDE VOLTAGE RANGE ■ MEETS UL SPECIFICATION 94V-0 ■ 5 & 10% VOLTAGE TOLERANCES AVAILABLE Maximum Ratings

Contextual Info: Data Sheet 200 mW EPITAXIAL PLANAR DIODES Semiconductor Mechanical Dimensions Description Pin 3 Pin 1HC Pin 2 Features • INDUSTRY STANDARD SOT-23 PACKAGE ■ MEETS UL SPECIFICATION 94V-0 ■ PLANAR PROCESS ■ 200 mW POWER DISSIPATION E le c tr ic a l C h a r a c te r is tic s 9

Contextual Info: 8.0 Amp SINGLE PHASE SILICON BRIDGE D a ta Sheet miconductor Mechanical Dimensions Description Hole-.1450 o s Mechanical Data: Mounting Position - Any. _ Weight- 2 0 Grams. Features • COMPACT SIZE ■ 12S AMP SURGE OVERLOAD RATING ■ LOW LEAKAGE CURRENT

Contextual Info: F l 7.5 Amp SCHOTTKY BARRIER RECTIFIERS D a ta Sheet Semiconductor Description Mechanical Dimensions m Features • HIGH CURREHT CAPABILITY WITH LOW V F ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ SUPERIOR M ETAL PROCESS ■ M EETS UL SPECIFICATION 94V-0

Contextual Info: 3J0 Amp SCHOTTKY D ata Sh eet BARRIER RECTIFIERS 3100 Series Semiconductor Mechanical Dimensions Description 1-6.60/7.11 r-u .i Package “ SMC” -H 15.59/6.10 1 I—-7.75/8.12 r l , 30 «L . 1.91/2.41 - |—^.051/.152 Features • EXTREMELY LOW Vr

Contextual Info: Data Sheet 750 mA HIGH VOLTAGE MICROWAVE OVEN R EC T IFIER S Description Mechanical Dimensions Features • HIGH OVERLOAD SURGE CAPABILITY ■ TYPICAL l„ < 1pA ■ CONTROLLED AVALANCHE CHARACTERISTICS ■ HIGH TEMPERATURE SOLDERING 250°C 10 Seconds ■ LOW FORWARD VOLTAGE DROP

Contextual Info: Data Sheet 3.0 Amp BARRIER SCHOTTKY RECTIFIERS Semiconductor Features • LOW STORED CHARGE; MAJORITY CARRIER CONDUCTION ■ MEETS UL SPECIFICATION 94V-0 ■ EXTREMELY LOW VF ■ LOW POWER LO SS— HIGH EFFICIENCY Electrical C haracteristics 9 25°C. IN5820, 21 A 22 Series

Contextual Info: PCI Data Sheet 1.0 Amp M EGARECTIFIERS Semiconductor Mechanical Dimensions Description Package |*- 4 .3 /4.7 -*j "S M A " 2 . 3/2.7 s C a th o d e *• i _ J_ L _ L :1' T7fFB 2 .0 M in . \f - >| ^ 01/20 1 .9 0 / 2 .1 5 5 Features o ■ HIGH TEMPERATURE METALLURGICALLY BONDED CONSTRUCTION

Contextual Info: Data Sheet 1.0 Amp FAST SWITCHING MEGARECTIFIERS Semiconductor Mechanical Dimensions JE D E C D O -4 1 § * t .080 X .1 0 7 .205 .16 0 . 1.0 0 M i n . 1 T _L 1 T ' Features • HIGH TEMPERATURE METALLURGY CALLY BONDED CONSTRUCTION ■ ■ SINTERED GLASS CAVITY-FREE

Contextual Info: Data Sheet 16 Amp SCHOTTKY BARRIER RECTIFIERS emiconductor i § Mechanical Dimensions Description JEDEC T0-220AC .150 A-. I i .350 .240 i— H - .200 .390 {4—» .107 Features • HIGH CURRENT CAPABILITY WITH LOW V r ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION

Contextual Info: 35 Amp PLASTIC SILICON AUTOMOTIVE RECTIFIERS D a ta Sheet Semiconductor Mechanical Dimensions Description Q Leads 1.00typ. ,05Dia. m m m Features • LOW COST ■ LOW LEAKAGE CURRENT ■ HIGH SURGE CAPABILITY ■ HIGH TEMPERATURE CAPABILITY ■ DIFFUSED JUNCTION

Contextual Info: 1.0 Amp MINIATURE PLASTIC SILICO N RECTIFIERS D ata Sheet miconduclor Description Mechanical Dimensions N S u. 3 u. Features • LOW CO ST ■ DIFFUSED JUNCTION ■ LOW LEAKAGE ■ M EET S U L SPECIFICATIO N 94V-0 Electrical C h aracte ristics @ 25*C. F1A 1.

Contextual Info: Data Sheet 1.0 Amp SU PER FAST PLASTIC RECTIFIERS Semiconductor Mechanical Dimensions JEDEC DO-41 t .0801 .107 o cc £ i . 1.00 Min. 1 4 ' t 205 r1 .iso . _L Features • LOW COST ■ ULTRAFAST RECOVERY TIM E ■ LOW FORWARD VOLTAGE DROP ■ MEETS UL SPECIFICATION 94 V-0

Contextual Info: 1.0 Amp FAST SWITCHING MEGARECTIFIERS D a ta Sheet miconductor Mechanical Dimensions r n _ L r .205 iso JEDEC DO-41 t •080 i . 1.00 M in.„ i Features • HIGH TEM PERATURE METALLURGI­ C A L!^ BONDED CONSTRUCTION ■ 1A AMP OPERATION T . = 75°C, WITH

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

C495 transistor

Abstract: C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a sm all extra

2851 transistor npn

Abstract: C 2851 transistor 2SC4428 EN2851 1S001 transistor 800v
Contextual Info: Ordering number: EN 2851 2SC4428 NPN Triple Diffused Planar Silicon Transistor SM YO l i 800V/6A Switching Regulator Applications F e a tu re s . High breakdown voltage, high reliability • F ast switching speed tf: 0.1 ps typ •W ideASO • Adoption of MBIT process

D1898

Abstract: 2SC4427 ITR06851 ITR06852 ITR06853 ITR06854 28504
Contextual Info: Ordering number:ENN2850 NPN Triple Diffused Planar Silicon Transistor 2SC4427 800V/4.5A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf : 0.1µs typ . · Wide ASO. · Adoption of MBIT process.