N2484 Search Results

C495 transistor

Abstract: C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a sm all extra

NPN pnp MATCHED PAIRS 2n2905A 2N2219A

Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
Contextual Info: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW

Contextual Info: PN2483, N2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES APPLICATIONS • High Breakdown Voltage BV^-gg . . . 6 0 V • Low Level, 'Low Noise Am plifier • High Gain hpg . . . 2 0 0 @ 500m>A ■ Audio Through High Frequency Ranges • Low Noise N.F. . . . 3 dB

C495 transistor

Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra

C495 transistor

Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
Contextual Info: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

PN2483

Abstract: PN2484
Contextual Info: Mjp*- PN2483, N2484 -W V ri ii' Jtyv r - , u .• ■ <■ > ’ ■ / / / / j V ' V LOW LEVEL, LOW NOISE ; , ' NPN SILICON PLANAR TRANSISTORS SSiÜi I 11 ftf FEATURES APPLICATIONS • High Breakdown Voltage BVçgQ » . , 60V ■ Low Level, 'Low Noise Amplifier

Contextual Info: PN2483, N2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES APPLICATIONS • High Breakdown Voltage BV^-^q . . . 6 0 V • Low Level, 'Low Noise Amplifier • High Gain hpg . . . 2 0 0 @ 500m>A MECHANICAL OUTLINE TO-92A ■ Audio Through High Frequency Ranges

NPN C460

Abstract: 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 BS9300 CV7496
Contextual Info: Metal Can Complementary Pairs Core Drivers | Polarity Maximum ratin ps 2N 3724A 2N 372 5A NPN N PN T039 T0 3 9 50 80 30 50 6 6 1200 1200 100 100 60 60 150 150 1500 1500 25 20 — - 300 300 100 100 0.20 0.26 2N 3244 PN P T0 3 9 40 40 5 1000 500 50 150 750 25

IN2222A

Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Contextual Info: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll

BC140 equivalent

Abstract: 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent
Contextual Info: Discrete Devices Transistors Cont. European “Pro Electron” Types Type Near Equivalent Polarity Pkg. Type Near Equivalent Polarity Pkg. BC107 BC107A BC107B BC108 BC108A 2 N 2484 2N930 2N930 2 N 2484 2N930 NPN NPN NPN NPN NPN T O -18 T O -18 T O -18 T O -18

E421 fet

Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
Contextual Info: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.

1n813 fairchild

Abstract: 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog
Contextual Info: Fairchild Semiconductor Dab Cataloi 196! The Fairchild Semiconductor Data Cataloc — an all-inclusive volume of product infor mation covering diodes, transistors, digita and linear integrated circuits, MSI and LS devices from the world's largest suppliei