BF492 Search Results

BF493

Abstract: BF491 BF492 motorola bf493 motorola
Contextual Info: BF491 thru BF493 MAXIMUM RATINGS Rating Symbol BF491 BF492 BF493 Unit C o llector-E m itter Voltage VCEO -2 0 0 - 250 -3 0 0 Collector-Base Voltage v CBO -200 -2 5 0 -3 0 0 Em itter-Base Voltage v EB0 - 6 .0 Vdc Vdc Vdc C ollector C urrent — Continuous 'c

bf493

Abstract: BF492 BF491 ferranti
Contextual Info: BF491 BF492 BF493 FERRANTI semkxmdüctots PNP Silicon Planar High V oltage Transistors DESCRIPTION These plastic encapsulated general purpose transistors are designed for applications requiring high breakdown voltage and low capacitance. The E-llne package is formed by injection moulding a SILICONE

BF493

Abstract: LB2T BF491 BF492 bp492
Contextual Info: BF491 2j3 PNP SILICON HIGH VOLTAGE TRANSISTORS BF491, BF492, BF493 are PNP silicon planar transistors designed for high voltage video amplifiers in television receivers requiring high breakdown voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS BF491

BF493

Abstract: bf493 motorola
Contextual Info: M A XIM U M RATINGS Symbol BF492 BF493 Unit C o lle cto r-E m itte r Voltage Rating VCEO -2 5 0 -3 0 0 Vdc C ollector-Base Voltage VCBO -2 5 0 -3 0 0 Em itter-Base V o ltage v EBO -6 .0 Vdc Vdc C o lle ctor C u rrent — C o ntinuous •c -5 0 0 m A dc T o ta l Device D issipa tion Cg T a = 25°C

BF493

Abstract: BF492 BF491
Contextual Info: PNP SILICON HIGH VOLTAGE TRANSISTORS B F 4 9 1 , BF492, BF493 are PNP silicon planar transistors designed for high voltage video amplifiers in television receivers requiring high breakdown voltage and low capacitance. EBC ; ABSOLUTE MAXIMUM RATINGS BF491 BF492

BF493

Contextual Info: PIMP Silicon Planar High Voltage Transistors BF491 BF492 BF493 DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltage, low saturation voltages, and low capacitance. The E-line package Is formed by transfer

BF492

Contextual Info: bGE ZETEX D • TÎ7GS7Û 0007504 ÖOS « Z E T B SEMI CONDUCTORS PIMP Silicon Planar High Voltage Transistors BF491 BF492 BF493 DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltage, low

BF493

Abstract: Ferranti Semiconductors BF492 BF491 ferranti
Contextual Info: BF491 BF492 BF493 FERRANTI semkxmdüctots PNP Silicon Planar High V oltage Transistors DESCRIPTION These plastic encapsulated general purpose transistors are designed for applications requiring high breakdown voltage and low capacitance. The E-llne package is formed by injection moulding a SILICONE

Contextual Info: BF491j2 j3 PNP SILICON HIGH VOLTAGE TRANSISTORS B F 4 9 1 , BF492, BF493 are PNP silicon planar transistors designed for high voltage video amplifiers in television receivers requiring high breakdown voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS

BF492

Abstract: BF493
Contextual Info: DeT| 7220533 GQOSafll V PLESSEY SEMICOND/DISCRETE 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /D I S C R E T E 95D 05081 D 31- 2 / BF491 BF493 PIMP silfcon planar high voltage transistors BF492 DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications

BF117

Abstract: BF294 BF178 BF299 BC236 BF174 BF298 BC312 BF120 BF137
Contextual Info: High Voltage Transistors TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd VCEO IC ICM* VCER* min mai mW (mA) (V) VCE(sat) IC (mA) VCE max (V) (V) IC (mA) fT min (MHz) Cob Cre* max (MHz) BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18 TO-18

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

BF245

Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

stencil

Abstract: BC237 automatic heat detector project report BC393 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and

BC237

Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device

bs170 replacement

Abstract: BC237 BC30 transistor K 2056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)

transistor bc237 bc337

Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage

BC237

Abstract: MPS-A70 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage

bc182 equivalent 2n2907

Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO

transistor MPS5771

Abstract: BC237 bfw4
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit

P2d MARKING CODE

Abstract: H2A transistor ev 2816 BC237 transistor 2N2906
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage