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Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 350 V olt VDS R DS on = 3 5 i i ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS 350 V Continuous Drain Current at Tamb=25°C •d 90 mA Pulsed Drain Current

BF492

Contextual Info: bGE ZETEX D • TÎ7GS7Û 0007504 ÖOS « Z E T B SEMI CONDUCTORS PIMP Silicon Planar High Voltage Transistors BF491 BF492 BF493 DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltage, low