ztx341
Abstract: Vce-80V
Contextual Info: ZTX341 140 0.16 120 hFE - Gain % VCE(sat) - Volts IC/IB=10 0.12 0.10 0.08 0.06 C B 100 80 ABSOLUTE MAXIMUM RATINGS. 100µA 1mA 10mA 100mA 10µA 100µA 1mA IC IC hFE v IC VCE(sat) v IC 10mA 100mA E E-Line TO92 Compatible 60 40 20 0.04 0.02 10µA ZTX341 ISSUE 2 MARCH 94
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MPSA42
Abstract: MPSA43 ZTX341 ZTX342 ZTX454 ZTX455 ZTX654 ZTX655 ZTX656 ZTX657
Contextual Info: SEMICONDUCTOR DICE NPN HIGH VOLTAGE Min. Min. Max. at V CB Volts Volts ZTX657 M PSA42 ZTX656 M PSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX342 ZTX341 h FE ICBO V CBO V CEO Dice type 300 300 200 200 150 16 0 140 125 120 10 0 300 300 200 200 150 14 0 120 125 120 100
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ztx657mpsa42ztx656mpsa43+6ztx655ztx455ztx454ztx654ztx342ztx341
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Contextual Info: S EM IC O N D U C TO R DICE NPN HIGH VOLTAGE hFE at 'CBO V CBO VcEO Dice type Min. Min. Max. at VCB ZTX657 MPSA42 ZTX656 MPSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX342 ZTX341 Volts Min. Max. Volts Volts nA 300 300 200 200 150 160 140 125 120 100 100 200 100 200
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ztx657mpsa42ztx656mpsa43+6ztx655ztx455ztx454ztx654ztx342ztx341
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Contextual Info: ZETEX SEM ICONDU CTOR S IbE D • c^70S7fl 000bfl7fl b ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS \ ' Z c\-2-3> NPN HIGH VOLTAGE Dice type VCBO Min VCEO Min Volts Volts •cBO , Max a t VCB nA Volts at M ilt Max v« mA V o lt* V easw ■ at lc
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70s7fl000bfl7flztx657mpsa42+6ztx656mpsa43ztx655ztx455ztx454ztx654
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2N2369 SOT-23
Abstract: BAW66 diode marking w8 BZX88-C7V5 BAW* diode W6 marking sot-23 baw 92 Z6 DIODE BZX88C8V2 BAW63A
Contextual Info: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast
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baw63bzx88-c10bzx88-c11bzx88-c12+16bzx88-c13bzx88-c15bzx88-c16bzx88-c18bzx88-c20bzx88-c222n2369 sot-23baw66diode marking w8bzx88-c7v5baw* diodew6 marking sot-23baw 92z6 diodebzx88c8v2baw63a
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bcy79 equivalent
Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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bfs362n930bs9365baw63+9bs9302bfs36a2n929baw63abcy79 equivalent2n3053 equivalentbcy78 equivalent2n2905a equivalentf025
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2N4427 equivalent
Abstract: ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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bfs362n930bs9365baw63+14bs9302bfs36a2n929baw63a2n4427 equivalentzt ferranti2n2369 equivalent2n2708bzx88-c4v3diode baw67f025ic marking z7j 2n2369marking g5
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KT601
Abstract: 2SC1708 2SC2675 kt601am 2SC2089BL KT601A 2SC3328Y LOW-POWER SILICON NPN SM-150 diode 2SC1627Y
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 >= 20 2S0438 2S0875 2SC3359 2SC3359 2SC1198K 2S01782K A 2S01782K (A) 2SC2061 ~~~~ ~ t~~ ~~g~~~~ 25 30 Rohm Corp Rohm Corp Rohm Co Ltd Indust Mexi NECElecslnc NEC Corp JA Sanken Elec Rohm Co Ltd ~anyo E!ect
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2sc2868ys18382sc1627y2sc1627a-y+132sc2882y2n29402sc3328ybft392sc2003lkt6012sc17082sc2675kt601am2sc2089blkt601alow-power silicon npnsm-150 diode
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ZTX327
Abstract: ZTX321
Contextual Info: E-LINE TRANSISTORS TABLE 7: GENERAL PURPOSE TRANSISTORS PART NO. VCEO •c Vce V fT min @ MHz mA PIN OUT 123 V V A 300 300 100 25 300 300 100 25 0.5 0.5 0.1 0.2 0.4 0.4 0.5 0.35 20 20 2 50 2.0 2.0 0.1 5.0 50 50 30 50 30 30 2 10 10 10 1 6 50 50 80 150 10 10
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mpsa42fxta42ztx341ztx300+7mpsa92fxta92ztx541ztx500ztx327ztx3866ztx321
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low noise transistors
Abstract: MPS2369A
Contextual Info: Section S: Bipolar Transistors _General Purpose and S w itc h in g Transistors E-Line S w itc h in g T r a n s i s t o r s lP;> 300m W Pinout Details: 1-Collector, 2-Base,
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ztx341ztx314mps2369aztx300+4ztx541ztx500ztx510low noise transistors
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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ZTX458
Abstract: ZTX558 ZTX758 BF493 ZTX4555 BF392 BF393 MPSA92 ZTX658 ZTX757
Contextual Info: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability. Type Max V CE sat at hFE at V cbo V CEO V V mA V mA NPN
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ztx658ztx758ztx458ztx558+8ztx6575ztx757mpsa425mpsa92bf393bf493ztx4555bf392
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BC239C equivalent
Abstract: BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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bfs362n930bs9365baw63+14bs9302bfs36a2n929baw63abc239c equivalentbc550c equivalentbc237a equivalentbc238b equivalentbc548c equivalentbc238a equivalentbc108b equivalentbc549c equivalentbc183 equivalentbc237b equivalent
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BCW23
Abstract: BFS98 ZTX107 2N3866 pin diagram 2N4127 2N3707 2N929 BC107 BC108 BCW20
Contextual Info: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed
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ztx330ztx331bcw20bcw22+112n37072n929ztx107ztx108ztx1i09bc107bcw23bfs982n3866 pin diagram2n4127bc108
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ZTX107B
Abstract: ZTX108 ZTX1078 ZTX109C ZTX107 ZTX108B ZTX108C ZTX109 ZTX330 BCW23
Contextual Info: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed
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ztx330ztx331bcw20bcw22+132n37072n929ztx107ztx108ztx1i09bc107ztx107bztx1078ztx109cztx108bztx108cztx109bcw23
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ZTX415
Abstract: ZTX341 ZTX384 S2222A ZTX327 ZTX321 ZTX3866 ZTX325
Contextual Info: E-LINE TRANSISTORS TABLE 7: GENERAL PURPOSE TRANSISTORS P ART V CBO v CEO hFE m ln @ V V A 300 300 100 25 300 300 100 25 0.5 0.5 0.1 0.2 0.5 0 .3 5 -3 00 -300 -100 -3 00 -3 00 -100 -0 .5 -0 .5 -0.1 -0 .4 -0 .4 -0 .5 -25 -2 5 -0 .2 -0 .3 5 PIN f t LU v CE sat
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fxta42ztx341ztx300fxta92+10ztx500ztx327ztx3866fxt3866ztx325ztx320ztx415ztx384s2222aztx321
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WIMA TFM
Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Contextual Info: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN
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rg121juwima tfmbeckman 785-1mkb3+7wima tfm-.1uf-160vbf197diode zener ph c9v12n42862n3642bf197ptransistor 2n2359a
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MPSA42
Abstract: MPSA43 ZTX342 ZTX454 ZTX455 ZTX654 ZTX655 ZTX656 ZTX657
Contextual Info: SLE D • T c17057fl D 0 G 7 D S 1 fibT ■ Z E T B SEMICONDUCTOR DICE ZETEX S E M I C O N D U C T O R S NPN HIGH VOLTAGE V CBO V CEO 300 300 200 200 150 160 140 125 120 100 300 300 200 200 150 140 120 125 120 100 Volts Min. Max. 100 100 100 100 100 100 100
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00q7ds1ztx657mpsa42ztx656+7mpsa43ztx655ztx455ztx454ztx654ztx757ztx342
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BFS36
Abstract: BS9365 marking W4 NPN 2N2475 BFS37 f025 MARKING BS 2N929 2N930 BAW63
Contextual Info: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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bfs362n930bs9365baw63+9bs9302bfs36a2n929baw63amarking w4 npn2n2475bfs37f025marking bs
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ZTX458
Abstract: BF493 BF392 BF393 MPSA92 ZTX558 ZTX658 ZTX757 ZTX758 2N5401 BF391
Contextual Info: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The tra n s is to rs s h o w n in th is ta b le are designed fo r d rivin g num erical in d ica to r tu b es, neon lam ps and o th e r a p p lica tio n s requiring high vo lta g e ca p a b ility. V cbo M ax ICBO
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ztx658ztx758ztx458ztx558+8ztx6575ztx757mpsa425mpsa92bf393bf493bf3922n5401 bf391
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BF493
Abstract: ZTX338 MPSA06 ZTX451 ZTX452 ZTX454 ZTX551 ZTX552 ZTX553 ZTX554
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay S w itching, etc.
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1000mwztx4555ztx555ztx454+10ztx554ztx453sztx553ztx452ztx552mpsa06bf493ztx338ztx451ztx551
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2TX650
Abstract: zetex transistors TO92 BF493 ZTX458 ZTX558 ZTX758 BF392 BF393 MPSA92 ZTX658
Contextual Info: SbE » • ^70570 DGDb^M2 GTfl H Z E T B T -'Z /l-O l TABLE 13 : NPIU/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability.
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ztx658ztx758ztx458ztx558+9ztx6575ztx757mpsa42smpsa92bf393bf4932tx650zetex transistors to92bf392
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BSS56
Abstract: f025 ic marking z7 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A
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bfs362n930bs9365baw63+7bs9302bfs36a2n929baw63abss56f025ic marking z7
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2N3707 DIODE
Abstract: 2n4058 BC107 2N2475 2N929 BC107 equivalent Competitive 2N3707 BC108 BCW20
Contextual Info: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed
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ztx330ztx331bcw20bcw22+122n37072n929ztx107ztx108ztx1i09bc1072n3707 diode2n40582n2475bc107 equivalentcompetitivebc108
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