BF391 Search Results

BF391

Abstract: BF391 motorola
Contextual Info: BF391 thru M A X IM U M RATIN GS R a tin g Sym bol BF BF BF BF393 U n it 391 3 92 3 9 3 C o ll e c to r - E m it te r Volta ge VCEO 200 250 300 Vdc Co lle ct o r - B a s e Volta ge VCBO 200 250 300 Vdc Em it te r- B a s e Vo ltage CASE 29-04, STYLE 1 TO-92 TO-226AA

BF391

Abstract: DD07EGG
Contextual Info: bOE D • ^70570 DD07EGG IbT ■ Z E T B ZETEX SEMICONDUCTORS NPN Silicon Planar High Voltage Transistors BF391 BF392 BF393 DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltage, low

transistor bf391

Abstract: BF391 20MHZ BF392 BF393
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON HILGH VOLTAGE VIDEO TRANSISTORS BF391 BF392 BF393 TO-92 Plastic Package Designed For High Voltage Video Amplifier in Television Receivers.

VQB200

Abstract: BF393 BF391 BF392 VCB-60V
Contextual Info: CASE THE BF391, BF392, BF393 ARE NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO AMPLIFIERS IN TELEVISION RECEIVERS. THEY FEATURE 200V MINIMUM COLLECTOR-EMITTER BREAKDOWN VOLTAGE AND T0-92A GOOD FREQUENCY CHARACTERISTICS. ABSOLUTE MAXIMUM RATINGS

20MHZ

Abstract: BF391 BF392 BF393
Contextual Info: Transys Electronics L I M I T E D NPN SILICON HILGH VOLTAGE VIDEO TRANSISTORS BF391 BF392 BF393 TO-92 Plastic Package Designed For High Voltage Video Amplifier in Television Receivers. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

transistor bf391

Abstract: pin voltage of ic 393 BF391 BF392 BF393
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BF391, 392, 393 TO-92 Plastic Package E BC Designed for High Voltage Video Amplifier in Television Receivers ABSOLUTE MAXIMUM RATINGS Ta=25ºC

motorola bf758

Abstract: BF758 2SC1304 B0159 MOS60 2N6559 BF757 2SC2752L 45M100U
Contextual Info: POWER SILICON NPN Item Number 10 < 1 A, MJE344K 2N2726 2N3589 2N3591 2N3593 2N3595 BF391P BF391P BF391P MPSW43 ~rf~;3 15 20 2N6592 ZTX656 2N2727 2N3590 2N3592 2N3594 2N3596 MJ2251 ~b~~~ 25 30 B0127 80127 B0157 S627T 2N5655 S1377 2N6593 BF757 ~~~~~7 35 40 BF392P

BF393

Abstract: BF391 BF392 ferranti
Contextual Info: BF391 BF392 BF393 Inr IIsemiconductors FERRANTI L N P N S ilico n Planar High V o lta g e T ransisto rs DESCRIPTION These plastic encapsulated general purpose transistors are designed for applications requiring high breakdown voltage and low capacitance. The E-line package is formed by injection moulding a SILICONE

BF393

Abstract: ferranti BF391 BF392
Contextual Info: BF391 BF392 BF393 Inr IIsemiconductors FERRANTI L NPN Silicon Planar High Voltage Transistors DESCRIPTION These plastic encapsulated general purpose transistors are designed for applications requiring high breakdown voltage and low capacitance. The E-line package is formed by injection moulding a SILICONE

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON HILGH VOLTAGE VIDEO TRANSISTORS BF391 BF392 BF393 TO-92 Plastic Package Designed For High Voltage Video Amplifier in Television Receivers.

2N5715

Abstract: 2SC1255 nec RF package SOT89 2N4262 diode GG 14 S02369A 2n4073 BF844 MRF-604 2SC3601E
Contextual Info: RF POWER SILICON NPN Item Number I C 5 10 15 20 30 2SC2954 BLU98 BLV90/SL BLV99 BF391Wl 2N4924 2N4925 2SC4165(Al gg~~~ 35 40 BCY66 MM3000 SM2285 ST3000 2SC3071 MM3001 RXT3904 RXT3904 ~rc~~g~ 45 50 2SC4046 BSV52R (A) BSV52R (A) SOR2369 (A) 2SC3953 2SC3782

BF391

Contextual Info: BF391 thru M A X IM U M RATINGS R a tin g S ym b o l BF BF BF 391 3 9 2 3 9 3 Unit BF393 CASE 29-04, STYLE 1 TO-92 TO-226AA C olle cto r-E m itte r Voltage VCEO 200 250 300 Vdc C ollector-Base Voltage VCBO 200 250 300 Vdc E m itter-Base Voltage vebo 6.0

bf393

Abstract: BF391
Contextual Info: NPN Silicon Planar High Voltage Transistors BF391 BF392 BF393 DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltage, low saturation voltages, and low capacitance. The E-line package is formed by transfer

BF117

Abstract: BF294 BF178 BF299 BC236 BF174 BF298 BC312 BF120 BF137
Contextual Info: High Voltage Transistors TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd VCEO IC ICM* VCER* min mai mW (mA) (V) VCE(sat) IC (mA) VCE max (V) (V) IC (mA) fT min (MHz) Cob Cre* max (MHz) BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18 TO-18

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

BF245

Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30

BC327 BC337 noise figure

Abstract: bc550 bc560 MPSA18 BC550 BC337-25 CBE BC327 noise figure BC337 CBE BC327 CBE BC338/BC328 BC414C BC337 noise
Contextual Info: LO W N O IS E A N D GOOD H F E L IN E A R IT Y These devices are designed to use on applications where good H F E linearity and low noise characteristics are required: Instrumentation, Hi-Fi Preamplifier. NPN BC239 BC239A BC239B BC239C BC413 BC413B BC413C

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

Contextual Info: BF 391 • BF 392 ■ BF 393 NPN HIGH VOLTAGE VIDEO AMPLIFIERS CASE TO-92A THE BP391, BF392, BF393 ARE NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO AMPLIFIERS IN TELEVISION RECEIVERS. THEY FEATURE 200V MINIMUM COLLECTOR-EMITTER BREAKDOWN VOLTAGE AND

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

BF195

Abstract: BF197 CD639 BF196 BF198 BF199 BF224 BF237 BF238 BF240
Contextual Info: TO-92 Plastic Package Transistors NPN - - -Max mum latings Type No. ^ce (V) Min BF195 ^CF (V) Min 30 BF196 2C 40 BF197 5 3C 40 BF198 ^EBC Pd (V) (W) (A Min @Tc=25 °c 4 25 40 4 30 4 0.4 0.4 0.35 Electrical Characteristics {Ta=25”C, Unless Otherwise Sneciflnrn

stencil

Abstract: BC237 automatic heat detector project report BC393 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and

BC237

Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device

bs170 replacement

Abstract: BC237 BC30 transistor K 2056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)