BC239B Search Results

8C317

Abstract: BC3098 bc2388 BC306 8C239 bc238 BC259C TO92
Contextual Info: DEVICE TYPE PA C K A G E B V C fO BVCBO B VE80 CBO # VCB IVI M M VI MIN BC237 BC237A BC237B BC238 BC238A N P N T O -92 N P N T O -92 N PN TO -92 N PN T O -9 2 N P N T O -92 (77 (77) (77) (77) (77) 45 45 45 20 20 50 50 50 30 30 BC2388 BC238C 8C239 BC239B

BC327 BC337 noise figure

Abstract: bc550 bc560 MPSA18 BC550 BC337-25 CBE BC327 noise figure BC337 CBE BC327 CBE BC338/BC328 BC414C BC337 noise
Contextual Info: LO W N O IS E A N D GOOD H F E L IN E A R IT Y These devices are designed to use on applications where good H F E linearity and low noise characteristics are required: Instrumentation, Hi-Fi Preamplifier. NPN BC239 BC239A BC239B BC239C BC413 BC413B BC413C

Bc238B, NPN

Abstract: BC250C BC260 BC260B Bc300
Contextual Info: 37E D SEMELAB LTD ^ Type No. Reliability Polarity Option Package v CEO •c cont 6133187 0000D33 b « S M L B < -^i¿¿'^rá’aiiwiiiv ’ V 'niiii“ij^tirilnr hFE@ Vc e /Ic H PD BC238B BC238C BC239 BC239B BC239C NPN NPN NPN NPN NPN T092 T092 T092 T092 T092

bc267

Abstract: BC267B bc238c BC250C BC267A BC238B BC238B npn Bc238B, NPN BC250 BC250B
Contextual Info: E3SEMELABE2S2Sa TVpe No. Reliability 2?!!«*?^ Polaritv Polarity Option Packane v Vr>cr\ Package CEO >c cont hi->hF E @ V c e /'C h PD BC238B BC238C BC239 BC239B BC239C NPN NPN NPN NPN NPN T092 T092 T092 T092 T092 20 20 20 20 20 0.1 0.1 0.1 0.1 0.1 330typ

Contextual Info: TO-92 Plastic Package Transistors NPN Ele ctrical C h a ra c t e ris t ic s (Ta -25 C M a x im u m R a tin g s Type No. BC238B BC238C BC239 BC239B BC239C ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min $30 25 5 $30 $ 0 $30 $30 25 25 25 25 5 5 5 5 Pd 'c (W) (A) @Tc=25“c

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BC207 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min Pd 'c (W) W @Tc=25°c SO 45 5 0.625 0.1 ‘CBO V CB w ï(V ) Max 'c e s m ^ce

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

BC207

Abstract: BC208B BC209C BC237 BC237A BC237B BC237C BC238 BC238A BC238B
Contextual Info: Maximum Ratings Type No. BC207 V CBO ''CEO V EBO V Min (V) Min (V) Min 50 45 5 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (A) <W) @Tc=25°c 0.625 0.1 *c b o vca m ^CES VCE @ (V) (mA) Max (V) Max Min 0.015 40 lc « (mA) I fe 110

2N3480

Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

F B0347

Abstract: b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6
Contextual Info: Pro Electron Series in o PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET o Type No. BC107 BC107A Can Styl« TO-18 TO-18 VCES* v CBO (VI M in 50 50 v CEO (V) M in 45 45 v EB0 (V) M in 6 6 •c e s * 'CBO a InA) Max 15* 15* V CB IV) 50 50 H rh Ne 1 kH z *

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

NPN Transistor BC548B

Abstract: transistor bc238b TP2369A t092 transistor pro-electron BCS48
Contextual Info: SPRAGUE/SEMICOND GROUP 14E D • T -U 'O I ÖS13ÖS0 □ □□ 47ei4 4 ■ SPRAGUE PROELECTRON T092 TRANSISTOR TYPES» PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA

NPN Transistor BC548B

Abstract: BC548 BC238B npn bc337-40 npn transistor
Contextual Info: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB

BC239C equivalent

Abstract: BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

BC238B npn

Abstract: BC337-25 BC415A CBE BC238B Bc238B, NPN BC337 CBE BC307A BC414B BC337-25 CBE BC238C
Contextual Info: S P R AGUE EconolineR Plast ic-M old ed Silicon S E P T R Transistors SMALL-SIGNAL AMPLIFIERS PRO-ELECTRON SERIES >- Pd BC Ta = 25°C V(BR) V(BR) V(BR) Conditions C BO CEO E BO Ic Q. (mW) Vo lts V olts Vo lts (m A) BC182A NPN 300 60 50 6 2 5 120 BC182B NPN

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

BC337-16-5

Abstract: BC207 BC208B BC209C BC237 BC237A BC237B BC237C BC238 BC238B
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. V EBO *CBO ^CB (V) (W) (|iA) @ (V) Min 8Tc=25°c 0.625 45 BC207 50 BC208B 25 (A) 0.015 @ ^CE(SAT) (mA) 0 (V ) Min Max Max 0.1

BC147B

Abstract: BC148B BC147A BC149B BC148A BC149C BC148C BC148 BC157A BC158B
Contextual Info: ADVANI OERLIKON/ SEMICOND / 3bE ]> B OSblbMÖ O O O O D I O M M S E LI A s i l ic o n t r a n s i s t o r s NPN ‘ PNP Po =0.25W gTa«2B°C Caso: SOT-25 JBC147 BC147A >' BC147B < BC148 BC148A £ BC148B BC148C 080149 , BC149B /•BC149C f BC157 Vr BC157A , BC157B

TRANSISTOR 237b

Abstract: BC239 NPN transistor BC238 NPN transistor cross reference bc237 BC239CTA transistor BC 458 BC237 transistor bc 238 b
Contextual Info: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter

BC238B

Abstract: BC547B bcy58 ZT Ferranti 2N1131 2N1132 2N3053 2N4037 2N696 2N697
Contextual Info: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100