2N6593 Search Results

motorola bf758

Abstract: BF758 2SC1304 B0159 MOS60 2N6559 BF757 2SC2752L 45M100U
Contextual Info: POWER SILICON NPN Item Number 10 < 1 A, MJE344K 2N2726 2N3589 2N3591 2N3593 2N3595 BF391P BF391P BF391P MPSW43 ~rf~;3 15 20 2N6592 ZTX656 2N2727 2N3590 2N3592 2N3594 2N3596 MJ2251 ~b~~~ 25 30 B0127 80127 B0157 S627T 2N5655 S1377 2N6593 BF757 ~~~~~7 35 40 BF392P

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

NSD134

Abstract: NSD459 NSD458 NSD133 NSE459 TO-202 D40N2 2N3440 nse458 2N6712
Contextual Info: NATL SEMICOND DISCRETE 52E D • T Z‘ 2~7~0/ bSG113Q 0D377flb 3 ■ NPN Medium Power Transistors by Ascending Vceo (continued) Part No. Vceo (V) Min Hfe @ lc/Vce Max ' (mA/V) Vce (sat) (V) Max lc/lb Package (mA)/(mA) PN7055 220 40 10/20 1.0 20 TO-92 D40P5

1040B

Abstract: 2N3910 svt6062 2n5100
Contextual Info: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.

N6555

Abstract: 2N6593 2n6557 2N6558 IC N6555 2N6552 to 202 case 2N6548 2N6549 2N6551
Contextual Info: Power Transistors TO-202 Case Z NPN Ö TYPE PNP 2N6548 2N6549 ic PD A (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX VCE(SAT) @ IC (mA) (A) MAX 2.0 2.0 50 40 25,000 150,000 200 15,000 150,000 200 n (MHz) MIN : 2.0 ; ; 2.0 100 2.0 20 100 2.0 2.0 50

IC N6555

Abstract: N6555 2N6549 2N6558 N6554 2n6556 2N6548 2N6551 2N6552 2N6553
Contextual Info: Power Transistors TO-202 Case Z NPN Ö TYPE PNP 2N6548 2N6549 ic PD A (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX VCE(SAT) @ IC (mA) (A) MAX 2.0 2.0 50 40 25,000 150,000 200 15,000 150,000 200 n (MHz) MIN : 2.0 ; ; 2.0 100 2.0 20 100 2.0 2.0 50

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BTA08-600C equivalent

Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
Contextual Info: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B

nsdu10

Abstract: nse458 NSD134
Contextual Info: NATL SEMICOND DISCRETE 52E D • bSQ113Q 0D377flb 3 ■ 7 ~ 2 ~7~ £ / NPN Medium Power Transistors by Ascending Vceo (Continued) Part No. VCeo (V) Min Hfe @ lc/Vce Max (mA/V) Vce (sat) (V) Max •c/lb (mA)/(mA) 10/20 1,0 20 TO-92 Package PN7055 220 40 D40P5

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

Contextual Info: Pow er Transistors TO-202 Case TYPE NO. NPN PNP ic PD A (W) MAX BVCBO BVCEO @ ic hFE (V) (V) (mA) MIN MIN MIN MAX VCi(SAT) @ IC (V) (A) MAX fT (MHz) MIN 2N6548 2.0 2.0 50 40 25,000 150,000 200 2.0 2.0 100 2N6549 2.0 2.0 50 40 15,000 150,000 200 2.0 2.0 100

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

"NPN Transistors" 2n3567

Abstract: NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06
Contextual Info: NPN Transistors NATL S e m iS o n d u c t o r VCER* v CEO V Min M e d iu m P o w e r 'c e s ' hFE •cBOg, VCB @ *C & VCE (nA) (V) Min Max (mA) (V) Max VCbo (V) Min 2N699 TO-39 120 60 5 2 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40

Contextual Info: Power Transistors TO-202 Case TYPE MO. - ìtm : : ic PD A m Bwepo •W B». ':m \ (mA) , Ana MAX : «.ItlKl'IU 2.0 ■: 2.0 ■8Ö, 2N6549 2.0 2.0 ■ m y: VCE(SAT) e Ic f:;y. : ; 28*000 IWQfiBQ " 40 - ■ ■ MAX -! (A) m :-t- MAX n (MHz) WN 200 2.0 2,0

cen-u45

Abstract: RJP 30 D40N 2N6558 RJP 35
Contextual Info: Power Transistors TO-202 Case TYPE NO. NPN RJP ic PD A> <W MAX BVCBO BVCEO @ Ic hFE (V) (V) MIN MIN MM MAX (mA) VCE(SAT) IC (A) (V) MAX tr (MHz) MIN 2N6548 2.0 2.0 50 40 25,000 150,000 200 2.0 2.0 100 2N6549 2,0 2.0 50 40 15,000 150,000 200 2.0 2.0 100

BRX49 equivalent

Abstract: FR207 equivalent 4835D TYN 208 equivalent BDW84C equivalent BTA16-600B equivalent BCX38C equivalent MP 1048 EM q4003l4 TYN208
Contextual Info: Index/Cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 Central Part Number Page Industry Part Number 1N968B 122 1N2838B 118 IN 969B 122 1N2839B 129 1N 67 A 118 1N970B 122 1N2840B 129 Code Code Central Part Number