2N3593 Search Results

2N3593 Datasheets (9)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N3593		Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF	82.36KB	1
2N3593		Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	85.04KB	1
2N3593		Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	50.25KB	1
2N3593		Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	162.86KB	1
2N3593		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	107.24KB	1
2N3593		Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	118.53KB	1
2N3593		Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	92.21KB	1
2N3593		Unknown	Vintage Transistor Datasheets	Scan	PDF	54.22KB	1
2N3593		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	35.22KB	1

2N3593 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2N3593 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200ã V(BR)CBO (V)200 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175# I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2n3593 freq15m	PDF
motorola bf758 Abstract: BF758 2SC1304 B0159 MOS60 2N6559 BF757 2SC2752L 45M100U Contextual Info: POWER SILICON NPN Item Number 10 < 1 A, MJE344K 2N2726 2N3589 2N3591 2N3593 2N3595 BF391P BF391P BF391P MPSW43 ~rf~;3 15 20 2N6592 ZTX656 2N2727 2N3590 2N3592 2N3594 2N3596 MJ2251 ~b~~~ 25 30 B0127 80127 B0157 S627T 2N5655 S1377 2N6593 BF757 ~~~~~7 35 40 BF392P	Original	202ac 127var 220ab 252var +122sc358sz 2sc3588z 2sc2752l 2s01350 motorola bf758 bf758 2sc1304 b0159 mos60 2n6559 bf757 45m100u	PDF
2N3633 Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025 Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M	Original	2n3633 tip300 2n3609 2sa8140 +6mh0816 bcx53 rohm 2sb631 hitachi 2n3566 2n3519 sk3025	PDF
2SB641 r Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524 Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30	Original	2n1221 2s3030 bcz10 2s302 +14ha9048 tp3s38 2n923 bcy28 2sb641 r 2sb641 2n3633 2n3608 2n3588 bc381 2n3642 3sm diode low-power silicon pnp 2n3524	PDF
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	11ta0a12 a025a a0290 u0u55 +16a0291 a0292 a0305 a0306 a0a56 a0a59 aeg diode si 61 l aeg diodes d6 sgs transistors bc23b siliconix u315 mz306 by126 bcv59 ac128 2n3680	PDF
BF689 Abstract: 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36 Contextual Info: STI Type: BF200 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200 VCBO: 30 VCEO: 20 hFE min: 15 hFE max: hFE A: 3.0 VCE: VCE A: hfe: fT: 550 Case Style: TO-206AF/TO-72: Industry Type: BF200 STI Type: BF183 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200	Original	bf200 o-206af/to-72 bf183 bf206 +11bf208 bf689 2n5651 bf272 2n5652 bf251 bfy82 bfy70 bf316 bf479 bfx36	PDF
MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan	mc2259 mc880p mc9713p mc2257 +61n4003 germanium diode specification 2n1256 s p 1n4465 mc9802p mc9718p 3n214	PDF
RCA SK CROSS-REFERENCE Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1 Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered	OCR Scan	rca sk cross-reference cd4003 2n2505 tf408 +61n4465 250pa120 2n3017 pt 3570 trw rf pa189 semicon volume 1	PDF
transistor c2060 Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,	OCR Scan	an-134 transistor c2060 transistor shortform datasheet & cross references 1n4465 +7c1906 transistor germanium itt 3n58 in939 mc1230f 2n3866 motorola c943 transistor	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500ma 240mwf y51 h 120c bd124 +8kt368 bfq59 silec semiconductors bd214 al103 afy18 bd192 mm1711	PDF
2N3609 Abstract: 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625 Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate	Original	rn5816 rn5b16 rn5818 hse125 +15hse210 hse171 2nl051 2n2480 2n2479 2n3609 2n3633 2n3520 2n3618 motorola 2sc1330 transitron 2n3543 kt503a low-power silicon npn 2n3625	PDF
2N3633 Abstract: transitron 2N3596 INDUSTRO 2n3605 transitron 2n3605 TEXAS 2N3583 philco-ford 2N3609 Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 45 50 BFT28B BFT28B STIP2006 BSP15 BST15 BST15 MJ5415 MJ5415 MM5415 MM5415 MM5415 ST5415 2N5415 TRSP5415 TRSP2006 STIP20 STIP205 ~~~~~~X 55 60 65 70 75 80 85 90 TRSP20X TRSP20X5 TRSP20X5	Original	2n3633 transitron 2n3596 industro +52n3605 transitron 2n3605 texas 2n3583 philco-ford 2n3609	PDF