BFR54 Search Results

BFR540

Abstract: MSB003 BFR540 philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 The transistor is encapsulated in a

Contextual Info: Philips Semiconductors •I bbSB'lBl QDE5E55 3M7 APX N AI1ER PHILIPS/DISCRETE NPN 9 GHz wideband transistor FEATURES Preliminary specification b?E BFR541 PINNING DESCRIPTION • High power gain PIN • Low noise figure 1 emitter • High transition frequency

LB 122 transistor To-92

Abstract: BFR54 APX-100 TRANSISTOR K 314
Contextual Info: N AMER PHILIPS/DISCRETE hTE D • bbS3*ì31 DGS7713 2Û7 « A P X I BFR54 \ _ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 envelope primarily intended for use in active probes, frequency multipliers and linear amplifiers.

BFR540C

Contextual Info: SO T2 3 BFR540 NPN 9 GHz wideband transistor Rev. 6 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   

Contextual Info: BFR540 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)120m Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)8

bfr54

Contextual Info: N ANER PHILIPS/DISCRETE bTE D bbS3^31 DDE7713 Efl7 IAPX BFR54 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 envelope prim arily intended fo r use in active probes, frequency m ultipliers and linear amplifiers. Q UICK REFERENCE D A T A

philips MATV amplifiers

Abstract: SOT103 MSB037 transistor SOT103 BFR541 QQE5255 1175 transistor
Contextual Info: Philips Semiconductors m bbSBTBl 0DESES5 3M7 BIAPX AMER PHI LIPS/DISCRETE NPN 9 GHz wideband transistor FEATURES • b?E BFR541 PINNING DESCRIPTION High power gain PIN emitter Low noise figure 1 • High transition frequency 2 collector • Gold metallization ensures

MSB003

Abstract: BFR540
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Aug 23 2000 May 30 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 FEATURES DESCRIPTION

Contextual Info: BFR54 _ SILICON PLANAR EPITAXIAL TRANSISTOR N P-N tra n sisto r in a plas tic T O 9 2 p a c k a g e p r i m a r i l y i n te n d e d f o r use in active pr ob es , f r e q u e n c y m u l t i p l i e r s and linea r a m p lifi e rs . Q U IC K R EFE R E N C E D A T A

high gain low voltage NPN transistor

Abstract: high gain low capacitance NPN transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 2.4 GHZ RF TRANSISTOR 2GHZ RF TRANSISTOR "rf transistor" BFR540 RF POWER TRANSISTOR RF POWER TRANSISTOR NPN
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFR540 DESCRIPTION •High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones,

Contextual Info: Philips Semiconductors ^ ^ 53^ 3 1 0 0 3 5 5 1 7 7 bT U NPN 9 GHz wideband transistor crystal APV Product specification X3A-BFR540 AMER PHILIPS/DISCRETE b^E D DESCRIPTION MECHANICAL DATA NPN crystal used in BFR540 SOT23 , BFG540 (SOT143) and BFG541 (SOT223). Crystals are supplied

IEC-134

Abstract: BFR540 transistor d 1264 BFG541 X3A-BFR540 BFG540 IEC134
Contextual Info: P h ilip s Sem icon d u ctora P rodu ct sp ecification NPN 9 GHz wideband transistor crystal PHILIPS INTERNATIONAL ^ 3 SbE D DESCRIPTION BCDC>,n A3A-BFR540 m TllDfiEb OOMblD? ITI • PHIN M E C H A N IC A L DATA NPN crystal used in BFR540 SOT23 , BFG540 (SOT143) and BFG541 (SOT223). Crystals are supplied

BFR54

Abstract: BP317 dk transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BFR54 NPN medium frequency transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 11 Philips Semiconductors Product specification NPN medium frequency transistor

BFG541

Abstract: X3A-BFR540 BFR540 BFG540
Contextual Info: 0035517 P h iM p s jg m ic o n d u c to rg _ _ ^ ^ NPN 9 GHz wideband transistor crystal WM A P Y 7bT Product specification X3A-BFR540 N AUER PHILIPS/DISCRETE b'îE D DESCRIPTION MECHANICAL DATA NPN crystal used in BFR540 SOT23 , BFG540 (SOT143) and BFG541 (SOT223). Crystals are supplied

Contextual Info: Philips Semiconductors Product specification NPN medium frequency transistor BFR54 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 1 5 V ). APPLICATIONS DESCRIPTION 1 em itter 2 base 3 collector • Active probes • Frequency m ultipliers

Contextual Info: SO T2 3 BFR540 NPN 9 GHz wideband transistor Rev. 6 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   

MJE 340 transistor

Abstract: SOT-103 74341 MSB037 BFR541 npn transistor high current
Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR541 FEATURES DESCRIPTION • High power gain • High transition frequency Silicon NPN planar epitaxial transistor in a plastic, 4-lead dual emitter SOT 103 package. • Gold metallization ensures

NPN transistor SST 117

Contextual Info: Philips Sem iconductors ^ b b 5 3 ^31 0 Q 3 1 cI b tl 5M 7 M APX Product specification NPN 9 GHz wideband transistor ^ ^ FEATURES ^ BFR540 • N AMER PHILIPS/DISCRETE bTE D PINNING PIN DESCRIPTION • High power gain • Low noise figure • High transition frequency

Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR540 The transistor is encapsulated in a plastic SOT23 envelope. • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability.

NPN transistor SST 117

Abstract: transistor npn Epitaxial Silicon SST 117 S 9018 H 331 transistor Transistor MJE 5331 bfr540 equivalent transistor 9018 NPN BFR505 BFR540 URA698 transistor bf 760
Contextual Info: P h iJ ip ^ e m lc o n d u c t o r ^ ^ ^ ^ ^ ^ b b 5 3 T 3 lD □ 3 n b^ SM7 M AP X Product specification NPN 9 GHz wideband transistor _ FEATURES ^ i N AUER BFR540 P H IL IP S /D IS C R E T E bTE PINNING • High power gain • Low noise figure PIN DESCRIPTION

all transistor data sheet

Abstract: free download transistor data sheet zo 103 ma CATV amplifier transistor transistor equivalent table RF NPN POWER TRANSISTOR 2.5 GHZ philips satellite systems common emitter amplifier all ic data common collector amplifier circuit designing
Contextual Info: BFR540 NPN 9 GHz wideband transistor Rev. 05 — 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ High power gain

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

LPC2148 i2c

Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Contextual Info: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.