IS21P Search Results

Contextual Info: TO SH IBA TA4003F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A4 0 0 3 F VHF-UHF WIDE BAND AMPLIFIER FEATURES • Band Width 1.5 CHz Typ. (3dB down, VCc = 2 V) • High Gain : |S2 i|2 = 11dB (Typ.), (f = 500 MHz, VCc = 2V) • Operating Supply Voltage

equivalent transistor c 5888

Contextual Info: • Philips Semiconductors bbS3R31 0025318 350 H A P X N AUER PHILIPS/DISCRETE Product specification b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION DESCRIPTION PIN • Low noise figure Code: N2 • High transition frequency

philips 4859

Contextual Info: Philips Semiconductors bbS3T31 D05SB11 D1S • APX N AMER PHILIPS/DISCRETE Product specification b?E D NPN 9 GHz wideband transistor FEATURES c BFR505 PINNING • High power gain PIN DESCRIPTION • Low noise figure Code: N30 • High transition frequency

Philips FA 261

Contextual Info: Philips Semiconductors N bbS B IB l AMER 0 0 2 5 TtiT M A P X PH ILIP S /D IS C R E TE Product specification b?E D NPN 9 GHz wideband transistor FEATURES BFS505 PIN CONFIGURATION PINNING PIN DESCRIPTION • Low current consumption • High power gain •

Contextual Info: Philips Semiconductors •I bbSB'lBl QDE5E55 3M7 APX N AI1ER PHILIPS/DISCRETE NPN 9 GHz wideband transistor FEATURES Preliminary specification b?E BFR541 PINNING DESCRIPTION • High power gain PIN • Low noise figure 1 emitter • High transition frequency

Contextual Info: What H E W L E T T * mLliM P A C K A R D Silicon Bipolar RFIC Amplifiers Technical Data MSA-31XX Series Features MSA-3111 D escription MSA-3135 The MSA-31XX series are high perform ance silicon bipolar RFIC am plifiers designed to be cascadable in 50 Q. system s. The

dk 2482 h transistor

Abstract: NPN N43 dk 2482 transistor BFG540 N43 n37 transistor Code N43 transistor N43 557 sot143 BFG540 BF 199 transistor
Contextual Info: e • ^ _ Philips S em iconductors ^ N • bbS3131 AMER 0025011 PHILIPS/DISCRETE NPN 9 GHz wideband transistor FEATURES 253 £ Product specification b7E BFG540; BFG540/X; BFG540/XR PINNING • High power gain • Low noise figure • High transition frequency

Contextual Info: TO SH IBA TA4003F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A4 0 0 3 F VHF-UHF WIDE BAND AMPLIFIER FEATURES • Band Width 1.5 CHz Typ. (3dB down, VCc = 2 V) • High Gain : |S2 i|2 = 11dB (Typ.), (f = 500 MHz, VCc = 2V) • Operating Supply Voltage

Contextual Info: TO SHIBA TA4004F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4004F V H F -U H F WIDE BAND AMPLIFIER FEATURES • Band W idth 1.2GHz Typ. (3dB down, V q q = 2V) • High Gain : |S2112 = 10.5dB (Typ.) (f=500MHz, V CC = 2V) • Operating Supply Voltage : V c c = 2—5V

Contextual Info: AV AN T EK 2QE INC D 0AVANTEK lm n t t Qoobb3Q a MSA-0170 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers T-74-^-Of Features Avantek 70 mil Package • Cascadable 50 n Gain Block • 3 dB Bandwidth: DC to 1.3 GHz • High Gain: 18.5 dB typical at 0.5 GHz

bf431

Abstract: BF431L
Contextual Info: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA MRF9011L BF431L* The RF Line N P N S ilic o n H igh -F re q u e n cy T ra n sisto r "European Part Number . . . d e s ig n e d p r im a rily fo r u s e in h ig h -g a in , lo w - n o is e s m a ll- s ig n a l a m p lifie r s fo r

Contextual Info: • I P h ilip s S em iconductors ^ 5 3 ^ 3 1 DO Sm ^M n fl M APX O bje ctive sp e c ific a tio n NPN 9 GHz wideband transistor ^ ^ FEATURES BFP520 N a HER PHILIPS/DISCRETE PINNING • High power gain PIN • Low noise figure 1 O’ n DESCRIPTION collector

Contextual Info: SIEMENS BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network X AGC o HF o Input Drain G2 ! HF Output + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: W haì HEWLETT WL'EM PACKARD Silicon Bipolar RFIC Amplifiers Technical Data MSA-20XX Series Features MSA-2011 M SA -2011 • Surface Mount SOT-143 Package • 3 dB Bandwidth: DC to 1.0 GHz • 16.2 dB Gain at 1 GHz • 4.3 dB NF at 1 GHz MSA-2035 M SA -2035

c550c

Abstract: kar 306
Contextual Info: w!%M J T J l H EW L E T T PA CK A R D 1 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-50311 Features • Internally Biased, Single 5 V Supply 17 mA • 19 dB Gain • 3.6 (IB NF • Unconditionally Stable SOT-143 Surface Mount Package Description

Contextual Info: MOTOROLA SC X S T R S / R F MOTOROLA 4bE D • b 3 b ? 25 4 0 01 S0b 3 0 ■ flOTb T ~ 3 l "33 ■i SEMICONDUCTOR - - - TECHNICAL DATA M RF5943 The RF Lin« DIE SO U RCE SAM E A S 2N5943 NPN Silico n High Frequency Transisto r

Contextual Info: W h a t HEW LETT mLtiÆ PACKARD Silicon Bipolar RFIC Amplifiers Technical Data MSA-20XX S eries F e a tu re s MSA-2011 MSA-2011 • Surface Mount SOT-143 Package • 3 dB Bandwidth: DC to 1.0 GHz • 16.2 dB Gain at 1 GHz • 4.3 dB NF at 1 GHz MSA-2035 MSA-2035

Contextual Info: Whl Sl HEWLETT» mLffM PACKARD Silicon Bipolar RFIC Amplifiers Technical Data MSA-31 XX Series Features MSA-3111 • Surface Mount SOT-143 Package • 3 dB Bandwidth: DC to 0.5 GHz • 18.4 dB Gain at 1 GHz • 3.5 dB NF at 1 GHz MSA-3135 • Hermetic Ceramic Package

BT 1840 PA

Contextual Info: • Philips Semiconductors ^ ■ APX bb53T31 0024641 350 ■ N AUER PHI LIP S/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b7E — BFG67; BFG67/X; BFG67R; BFG67/XR ■ PINNING 4 PIN 3 DESCRIPTION • High power gain • Low noise figure

Contextual Info: bbSBTBl 003EQA7 Ell Philips Semiconductors Product specification APX BFT24 NPN 2 GHz w ideband transistor N ANER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily Intended for use in RF low power amplifiers, such as in

NFE 02 352

Abstract: KMI 814 equivalent transistor 2 SA 1469 BFR520 BF 914 transistor MRA 843 MRA transistor transistor MJE -1103 ic LC 8712
Contextual Info: 2 ÏÏ£ â S iïi£ S ïiiS 0 0 2 5 5 3 3 N A P IE R 7 flb • P H IL IP S /D IS C R E T E APX Product specification D fe,7 E NPN 9 GHz wideband transistor FEATURES ^ BFR520 PINNING • High power gain • Low noise figure • High transition frequency

Contextual Info: Philips Semiconductors bbS3131 003314*1 3*1*1 M A P X Product specilication NPN 2 GHz wideband transistor 1 N Ar1ER PHILIPS/DISCRETE ^ DESCRIPTION BFW93 blE ]> PINNING NPN transistor in a plastic SOT37 envelope. PIN It is intended tor use in VHF and UHF applications, primarily

Contextual Info: Philips Semiconductors bbS3T31 00ESS33 7flb APX N AflER PHI LIPS/DISCRETE NPN 9 GHz wideband transistor FEATURES Product specification b?E ]> BFR520 e PINNING • High power gain • Low noise figure PIN DESCRIPTION Code: N28 • High transition frequency

BT 816 transistor

Abstract: PA 1515 transistor 9921 transistor
Contextual Info: Philips Semiconductors bb£ 3 R 31 Q Q 35 Q b b SR? ^ B A P X _ Product specification NPN 9 GHz wideband transistor BFS540 N AMER PHILIPS/DISCRETE FEATURES PINNING PIN CONFIGURATION PIN • High power gain DESCRIPTION _ EL Code: N4 • Low noise figure