2N5943 Search Results

2N5943

Abstract: MXR5943
Contextual Info: MOTOROLA SC -CXSTRS/R 0 T | t,3 b 7 E S M F> 6367254 MOTOROLA SC 8 9 0 79461 XSTRS/R F DDTTmal T D - p - 3 / '£ 3 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MXR5943 Die Source Sam e as 2N5943 RF TRANSISTOR NPN SILICON M A X IM U M RATINGS Sym bol

2N5943 equivalent

Abstract: 2N5943 JOHANSON 2951 Stackpole ferrite
Contextual Info: MOTOROLA SC X S T R S / R F 4bE D • b3b?2S4 0014103 7 MOTOROLA ■ ■SEMICONDUCTOR TECHNICAL DATA I flOTb P 3 I- 2 3 2N5943 The RF Line 1.2 Gite - 6 0 mAdc NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON . . . designed specifically for broadband applications requiring low

2N5943

Contextual Info: 2N5943 Bipolar NPN UHF/Microwave Transisitor 15.00 Transistors U. 1 of 1 Home Part Number: 2N5943 Online Store 2N5943 Diodes Bipo lar NPN UHF / M icro w av e Trans is it o r Transistors Enter code INTER3 at

Contextual Info: <Semi-Condaato\ fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5943 The RF Idne 1.2 GHz -50 mAde NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON

Contextual Info: 2N5943 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2N5943 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 400 mA VCE 30 V PDISS 1.0 W @ TA = 25 C O 3.5 W @ TC = 25 C O O O O O TJ

Contextual Info: MOTOROLA SC X S T R S / R F MOTOROLA 4bE D • b 3 b ? 25 4 0 01 S0b 3 0 ■ flOTb T ~ 3 l "33 ■i SEMICONDUCTOR - - - TECHNICAL DATA M RF5943 The RF Lin« DIE SO U RCE SAM E A S 2N5943 NPN Silico n High Frequency Transisto r

Contextual Info: 2N5943 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)400m Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-65þ Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)15

Contextual Info: m 2N5943 \ \ NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 S V M DESCRIPTION: The 2N5943 is a High Frequency Transistor for General Purpose Amplifier Applications. DIMENSIONS ! MIN. MAX. MIN. MAX. 4>a 0.190 0.210 4.83 533 6.60 INCHES MILLIMETERS

2N5943

Contextual Info: 2N5943 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 s Y M s DESCRIPTION: ? The 2N5943 is a High Frequency Transistor for General Purpose Amplifier Applications. DIMENSIONS INCHES MIN. MAX. MILLIMETERS MIN. MAX. <pa 0 190 0.210 4 83 5 33 A 0 240

Contextual Info: MOTOROLA SC -CXSTRS/R “flT F> 0 T | t ,3 b 7 E S M 890 6367 254 MOTOROLA SC X S T R S / R F 79461 DDTTmal T D - p - 3 / '£ 3 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MXR5943 Die Source Sa m e as 2N5943 RF TRANSISTOR NPN SILICON M AXIM U M RATINGS

Contextual Info: MOTOROLA m SEM ICO NDUCTOR TECHNICAL DATA M R F5943 The RF Line DIE SOURCE SAME AS 2N5943 N PN S ilico n High Frequency Tran sistor Iq = 400 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for amplifier, oscillator or frequency multiplier applications in industrial

2N5943

Contextual Info: 2N5943 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2N5943 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 400 mA VCE 30 V PDISS 1.0 W @ TA = 25 C O 3.5 W @ TC = 25 C O O O O O TJ

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2N5179

Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

MRF965

Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

2N5109 motorola

Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­

2N3866 MOTOROLA

Abstract: 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

2N5109 motorola

Abstract: BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

Contextual Info: B yB ^g sg g N * F ^ B = M M B O P A 6OO 9n f r W 1 1 Fast-Settling Wideband OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • FAST SETTLING: 80ns to ±0.1% 100ns to ±0.01% • FULL DIFFERENTIAL FET INPUT • -25°C to +85°C AND -55°C to +125°C TEMPERATURE