TMPT5401 Search Results
TMPT5401 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TMPT5401 | Allegro MicroSystems | Bipolar Transistor | Scan | 267.75KB | 2 | ||
| TMPT5401 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 119.36KB | 1 | ||
| TMPT5401 | Sprague | PNP BIPOLAR TRANSISTOR | Scan | 267.76KB | 2 | ||
| TMPT5401R | Allegro MicroSystems | Bipolar Transistor | Scan | 267.75KB | 2 |
TMPT5401 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: ELECTRICAL CHARACTERISTICS at I At = 25°C V BR CBO VIBRJCEO V(BR)EBO Max. Device Type Marking (V ) TMPT2907A 2F 60 60 TMPT3906 2A 40 40 TMPT4403 2T 40 40 5.0 TMPT5087 2Q 50 50 _ TMPT5401 2L 160 150 5.0 TMPTA56 2G 80 80 4.0 100 NOTES: (V) v CB h FE 'c @ V CE Max. @ lc |
OCR Scan |
tmpt2907atmpt3906tmpt4403tmpt5087+4 | |
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Contextual Info: TMPT5401R Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)160 I(C) Max. (A)10m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)200m @I(C) (A) (Test Condition)10m |
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tmpt5401rfreq100m | |
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Contextual Info: TMPT5401 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)160 I(C) Max. (A)10m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)200m @I(C) (A) (Test Condition)10m |
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tmpt5401freq100m | |
2SA1281
Abstract: 2SA1281C 2NS401 2SA949Y 2SA429G 2SA1013-0 C 2N4888 2SA429GTM 2SA429 2SA778AK
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samsun80o-206aao-236ot-23+13 | |
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Contextual Info: ELECTRICAL CHARACTERISTICS at I A, = 25°C ^CBO V BR CBO V{BRJCEO V(BR)EBO Max. Device Marking Type (V) (V) (V) @vCB (nA) (V) VCE(sat) DC Current Gain @ ic e v CE Max. @ ' c Min. Max. (mA) (V) (V) (mA) *T Min. 0 lc (MHz) (mA) CJ t; NF' Pinning (pF) (ns) (dB) |
OCR Scan |
tmpt2907atmpt3906tmpt4403tmpt5087+3 | |
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Contextual Info: ALLEGRO MICROSYSTEMS INC LIE ]> • 0504330 000b3A7 ■ A L 6R PNP TRANSISTORS TO-92ITO-226AA V*3 W and ‘T P DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C 'cBO DC Current Gain v CEIMl] * le V Max. v BR CBO V y(BR>CEO * (BR)EBO Max. @ v CB hFE K e |
OCR Scan |
000b3a7o-92ito-226aatp2907tp2907a | |
TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
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OCR Scan |
od-80od-323ot-23ot-89+13 | |
6CW 62
Abstract: BYM 268 6CW 59 CMR1U-02M CMSD4448 DAN202VAK bcw 918 CMPS5064 44H11 S02222
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OCR Scan |
10bq01510mf210mq04010mq060+16 | |
BAT 13003 D
Abstract: SMBJ5.OCA bat 13003 em 434 CMHD3595 CMR1U-02M CMSD4448 CMPS5064 CMPSH-3SE CMSH3-40
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OCR Scan |
30wq03f30wq04f30wq05f30wq06f+16 | |
bc 7-25 pnp
Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
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OCR Scan |
1n9141n41481n41501n5229+16 | |
tp4093
Abstract: TMPT5401 mA 723 TMPT2907 TP4221
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OCR Scan |
bcw29bcw30bcw61abcw61b+11 | |
marking C1
Abstract: TMPTA70 TMPT5401 h2t1
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OCR Scan |
ot-23/to-236abbcw29bcw30bcw61a+10 | |
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Contextual Info: ALL E GR O MICROSYSTEMS INC 85 14019 SPRAGUE. ^3 î> • G5D433Û QGD3bQÔ S E M I C O N D S /ICS 6 ■ ALûR 93D 03608 SMALL-OUTLINE BIPOLAR TRANSISTORS I PNP Transistors E LE C T R IC A L CH ARACTERISTICS at Tft = 25°C DC Current Gain IcBO TMPT3906 TMPT4125 |
OCR Scan |
g5d433 | |
bc 7-25 pnp
Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
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OCR Scan |
1n9141n41481n41501n4565+16 | |
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transistor SMD s72
Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
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ot323bc818wmun5131t1bc846a+12 | |
T3D 90
Abstract: marking abF t3d 2d Marking 3D TO-236AB TMPT4402 TMPTA70 TMPTA63 0/t3d 2d
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OCR Scan |
0003l06t3d 90marking abft3d 2d+5 | |
MSC1621
Abstract: Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931
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OCR Scan |
5smc15at35smc16at35smc18at35smc20at3+16 | |
BTA08-600C equivalent
Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
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OCR Scan |
z0409mez0409mfz0409nez0409nf+16 | |
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Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type BR CBO V ’ (BR)CEO (V) (V) v DC Current Gain (BR)EBO Max. @ V C8 (V) (nA) (V) K* v CE(MI) @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA) |
OCR Scan |
bcw29bcw30bcw61abcw61b+6 | |
TMPT5401Contextual Info: ESI ELECTRICAL CHARACTERISTICS at IVA = 25 C ^CBO v* BR CBO V V (BR)EBO M ax. @ v CB (BRICEO D evice T yp e M arking (V) (V) (V) (nA) (V) v CE(sat) DC C u rren t Gain hFE h F6 'c ® Min. Max. (m A ) V CE (V) M ax. ® l c (V) (m A) *T Min. (M H z) ® 'c |
OCR Scan |
pt2907apt3906pt4403pt5087+2 | |
thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
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OCR Scan |
11pm104thyristor tag 8506nais inverter vf 7f operation manual922aa1y-a4p+7 | |
transistor 2N3563
Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
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transistor 2n35632n3819 cross reference2sk302sa726+6 | |
1N4548
Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
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1n1001n100a1n1011n102+16 | |
A2 zener diode
Abstract: diode ZENER A1 to-226aa to226aa ZENER DIODE 1n5240 DIODE 827 ZENER 1N5242 1N414* zener 2n2222 transistor pin b c e ZENER 1n5232
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OCR Scan |
1n9141n41481n52301n5231+16 | |