PT2907A Search Results

Contextual Info: Central CM PT2907A Sem iconductor Corp. PNP SILICON TRAN SISTO R DESCRIPTION: The CENTRAL S E M IC O N D U C T O R PT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and

TMPT4401

Abstract: TMPT5089 TMPT811C5 TMPT1621B3 TMPT1621B4 TMPT1622D8 TMPT1623L7 TMPT811C6 TMPT811C7 TMPT812M3
Contextual Info: C i SPRAGUE BIPOLAR TRANSISTORS « BIPOLAR TRANSISTORS M A R K O F R E LIA B ILIT Y SERIES TMPT MICROMINIATURE TRANSISTORS P INNING 3 • Series T M P T consists of s ta n d a rd A s ia n a nd U .S .A . tra n s is to r types. • These devices are m olded in T 0 - 2 3 6 A A h igh profile or T 0 - 2 3 6 A B

tp4093

Abstract: TMPT5401 mA 723 TMPT2907 TP4221
Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type v BR CBO V ’ (BR)CEO (BR)EBO Max. @ V C8 (V) (V) (V) (nA) (V) v CE(MI) DC Current Gain K* @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)

marking C1

Abstract: TMPTA70 TMPT5401 h2t1
Contextual Info: PNP TRANSISTORS SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T. = 25°C V BF CBO v (BR)CEO V(BR)EBO Max. @ v CB Device hFE We «T @ lc @ v CE Max. @ lc Marking (V) (V) (V) (nA) BCW29 C1 303 32 5.0 100 20 120 260 2.0 BCW30 C2 3ID3 32 5.0 100 20 215 500 2.0

transistor smd DAG

Abstract: smd transistor asy lcd inverter n mosfet cross reference smd transistor asy EA TRANSISTOR ASY 75 Royer oscillator diode d7b lm 6358 MAX753
Contextual Info: 19-0197: Rev 1:1/9 5 CCFL B a c k l i g h t a n d LCD C o n t r a s t C o n t r o l l e r s Both the backplane bias and the CCFL su p p ly can be shut down independently. When both sections are shut down, su p p ly current drops to 25|iA. The LCD contrast

Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type BR CBO V ’ (BR)CEO (V) (V) v DC Current Gain (BR)EBO Max. @ V C8 (V) (nA) (V) K* v CE(MI) @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)

TMPT5401

Contextual Info: ESI ELECTRICAL CHARACTERISTICS at IVA = 25 C ^CBO v* BR CBO V V (BR)EBO M ax. @ v CB (BRICEO D evice T yp e M arking (V) (V) (V) (nA) (V) v CE(sat) DC C u rren t Gain hFE h F6 'c ® Min. Max. (m A ) V CE (V) M ax. ® l c (V) (m A) *T Min. (M H z) ® 'c

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

CP592

Abstract: cmhd3595 cmkt5088 PTA44 z2l4 ut3906 KT2907A KT2207 CMXDM7002A PT3904
Contextual Info: Characteristic Curve maex Central Part # Central Process# 2N7002 BAS56 BCX51 thru BCX53 BCX54 thru B CX56 BZX84C2V4 thru BZX84C6V2 BZX84C6V8 thru BZX84C51 CBCP68 CBCP69 CBCX68 CBCX69 CCLH M 080 thru CCLH M 150 CCLM 0035 thru CCLM 5750 C JD 31C CJD 32 C CJD 41 C

DAN202VAK

Abstract: MMBR2857 BYD77D CROSS REFERENCE MXT2222A S04401 CMSH3-40 FDS01201 CMPS5064 BYD17D equivalent mxt2907a
Contextual Info: index/Cross Reference Industry Part Number Central Part Number Code Selection Guide Industry Part Number Data Sheet Central Part Number Code Selection Guide Data Sheet 1N6478 CLLR1-02 EM 46 116 BAT54S CMPSH-3S EM 39 1N6479 CLLR1-02 EM 46 116 BAT64 CMPSH-3